BBY58 Search Results

clapp oscillator

Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
Contextual Info: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency

Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

BBY58-02W

Abstract: SCD80
Contextual Info: BBY58-02W Silicon Tuning Diode 2
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance 1
Designed for low tuning voltage operation VES05991 for VCO's in mobile communications equipment
For low frequency control elements such as TCXOs and VCXOs

BBY58-03W

Contextual Info: BBY58-03W 2 Silicon Tuning Diode 1
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation VPS05176 for VCO's in mobile communications equipment
For low frequency control elements such as TCXOs and VCXOs

smd diode A2

Abstract: A2 diode smd smd ct3 TSFP-4 smd diode marking c1 DIODE smd marking A1 marking 1c1 smd marking CT1 EHA07008 smd marking CT3
Contextual Info: BBY58-07F XYs Silicon Tuning Diode Preliminary data 3
Excellent linearity
High Q hyperabrupt tuning diode 2 4 1
Low series inductance
Designed for low tuning voltage operation TSFP-4 for VCO's in mobile communications equipment
For low frequency control elements

BBY58-02L

Abstract: DIODE T6 marking DIODE B6S marking G SOT323 Transistor BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

marking code 62 3 pin diode

Abstract: sot323 marking code A.C diode marking code 88 MARK A SCD80
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

DIODE B6S

Abstract: v sot323 BBY58-02W 88 BBY58 BBY58-02L BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
Contextual Info: BBY58. Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation for VCO's in mobile communications equipment
For low frequency control elements such as TCXOs and VCXOs

BBY58-05W

Abstract: BBY58-06W VSO05561
Contextual Info: BBY58-05W/BBY58-06W 3 Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VSO05561
For low frequency control elements

TSLP

Abstract: *T4 MARKING pin diode marking b8
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

BBY58-02V

Abstract: SC79
Contextual Info: BBY58-02V Silicon Tuning Diode 2
Excellent linearity
High Q hyperabrupt tuning diode
Low series inductance 1
Designed for low tuning voltage operation VES05991 for VCO's in mobile communications equipment
For low frequency control elements such as TCXOs and VCXOs

Infineon Technologies Silicon Tuning Diode

Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

BBY58-02L

Abstract: BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 SC79 SCD80
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

E6327

Abstract: SCD80 BB857 d bb833 E7908 BB857 BB831 BB689 BB664 BB555E7902 BB833 V2 3N DIODE BB857E7908
Contextual Info: A p p l i c a t i o n N o t e , V 2. 1, F e b . 2 00 8 A p p li c a t i o n N o t e N o . 0 4 7 M a t c h i ng M e th o d s f o r V a r i ab l e C a p a c i t an c e Diodes R F & P r o t e c ti o n D e v i c e s Edition 2008-02-14 Published by Infineon Technologies AG,

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows