P2003B Search Results

ELM32414LA

Contextual Info: 单 N 沟道 MOSFET ELM32414LA-S •概要 ■特点 ELM32414LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=35A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 31mΩ (Vgs=4.5V) ■绝对最大额定值 项目

ELM34402AA

Abstract: P2003b p2003bvg
Contextual Info: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

ELM34404AA

Contextual Info: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容，低工作电压， •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值 项目

p2003bdg

Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been

FET-ME2N7002E

Abstract: me4856 P2003BVG OZ8602 ME4410A 37GF50000-C0 P2003b F50IXX 1U-10-04X-K oz815
Contextual Info: 5 D 4 3 2 1 Project Name : F50IXX Platform : Montevina Penryn CPU +Cantiga(NB)+ICH9M(SB)+NB9P/M D Schematic Version Change History PAGE CONTENT 1. INDEX 39. NB9P/M LVDS / TMDS 2. SYSTEM BLOCK DIAGRAM 40. NB9P/M SS / BIOS / HDCP 3. POWER DIAGRAM & SEQUENCE

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: シングル N チャンネル MOSFET ELM34402AA-N •概要 ■特長 ELM34402AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=8A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 32mΩ (Vgs=4.5V)

Asus

Abstract: 88E8056 INVERTER BOARD Asus A6 Touch pad synaptics p2003bvg QG82945PM P2003EVG 88e8056 Marvell asus f3 asus g41
Contextual Info: 5 4 LCD CRT 3 2 CPU LVDS YONAH 31W Z84J CLOCK GEN Intel Centrino Duo RGB 1 MEROM 34W ICS 954310 D D TV DAC TV-OUT THERMAL SENSOR FSB 667MHz MAX6657MSA S-Video & Composite Video MXM Module TMDS HDMI Transmitter Silicon Image SiI1930 PCIE X16 NORTH BRIDGE Intel 945PM

p2003bdg

Abstract: P2003BD
Contextual Info: Single N-channel MOSFET ELM32414LA-S •General description ■Features ELM32414LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=35A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 31mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

Contextual Info: シングル N チャンネル MOSFET ELM32414LA-S •概要 ■特長 ELM32414LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=35A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 31mΩ (Vgs=4.5V)

P2003BD

Abstract: P2003BDG
Contextual Info: Single N-channel MOSFET ELM32414LA-S •General description ■Features ELM32414LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=35A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 31mΩ (Vgs=4.5V)