ELM32414LA
Contextual Info: 单 N 沟道 MOSFET ELM32414LA-S •概要 ■特点 ELM32414LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=35A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 31mΩ (Vgs=4.5V) ■绝对最大额定值 项目
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5ce120c5ke120ca5ce120ca5ce12a+145ke12a5ce12c5ke12ca5ce12cacat7105camp1410esg547e2g547h2g547f2p5504edg equivalentg547i1sp8k10sp8k10sfd5tbld1117al
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p2003bdg
Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been
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dmn3024lsddmn3024lssdmn2027lk3dmp3025lk3+16dmn3020lk3dmn3024lk3dmn4009lk3dmn4015lk3dmn4030lk3dmn4036lk3p2003bdgp1504bdgp3003edgp6006bdp5504edgp5504edg "cross referencefds6900as cross referencep0804bdp2804bdg cross referencezxmp6a17
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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o-263p45n02lsgp45n03ltgp75n02lsg+16p75n02ltgp0903bsgp0903btgp3055lsgp3055ltgp50n03lsgp70n02ldgp0603bdgp60n03ldgpa102fdgp2503npgp45n02ldgp0603bdp1703bdgp0403bdgp3004nd5g
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p2003bdg
Abstract: P2003BD
Contextual Info: Single N-channel MOSFET ELM32414LA-S •General description ■Features ELM32414LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=35A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 31mΩ (Vgs=4.5V)
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Contextual Info: シングル N チャンネル MOSFET ELM32414LA-S •概要 ■特長 ELM32414LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=35A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 31mΩ (Vgs=4.5V)
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P2003BD
Abstract: P2003BDG
Contextual Info: Single N-channel MOSFET ELM32414LA-S •General description ■Features ELM32414LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=35A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 31mΩ (Vgs=4.5V)
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