KM23C16100 Search Results

Contextual Info: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x8/1M x16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le organization T h e KM 23C 16100 is a fu lly s ta tic m a s k p ro g ra m m a b le 2 ,097,152 x 8 (byte m ode) ROM 1,040,576 x 16 (word m ode)

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)

Contextual Info: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x 8/1M x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access; 150ns (max.) Page access: 70ns (max.)

Contextual Info: PRELIMINARY KM23C16100FP CMOS MASK ROM 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2 ,0 97,1 52x 0 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

Contextual Info: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM23C1610QA 0D17073 4S5 « S U C K CMOS MASK ROM 16M-Bit 2M x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 2,097,152 x 8 bit organization Fast access time: 120ns(max). Supply voltage: single + 5V

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

1212U

Contextual Info: KM23C1610QA CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM GENERAL DESCRIPTION 2,097,152x8 bit organization Fast access time: 120ns(max). Supply voltage: single + 5V Current consumption Operating: 60mA (max.) Standby: 50^A (max.) • Fully static operation > All inputs and outputs TTL compatible

KM23C8001

Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E