IXYS VMK Search Results

mek75

Abstract: VMO6
Contextual Info: 3URGXFW &KDQJH 1RWLFH 3&1 1R  Customer: DOO IXYS product type: 3DFNDJH 72 Description of change: LQWURGXFWLRQ RI QHZ OHDGIUHH SDVWH VROGHULQJ SURFHVV LQ PRGXOH DVVHPEO\ Reason for change:  OHDGIUHH VROGHULQJ  LPSURYHG WKHUPDO SHUIRUPDQFH E\ EHWWHU GLH DWWDFK TXDOLW\

VMO 440

Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Contextual Info: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)

Contextual Info: VMK 90-02T2 Dual Power MOSFET Module VDSS Id25 = 200 V “ 83 A ^ D S o n “ 25 m Q Common-Source connected N-Channel Enhancement Mode Sym bol Test C onditions vv DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 6.8 kß 200 V VGS V GSM

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ 200 V VGS Continuous ±20 V VGSM Transient

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 2 3 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kW 200 V VGS Continuous ±20 V VGSM Transient ±30

Contextual Info: Dual Power MOSFET Module VMK 90-02T2 Common-Source connected N-Channel Enhancement Mode 4 5 1 2 3 VDSS = 200 V ID25 = 83 A Ω RDS on = 25 mΩ 6 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 6.8 kΩ

90-02T2

Abstract: ixys vmk
Contextual Info: l a i x Y S VMK 90-02T2 Dual Power MOSFET Module V,DSS I d 25 RDS on = 200 V = 83 A = 25 mQ Common-Source connected N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 200 V Voon Tj = 25°C to 150°C; FtGS = 6.8 k£2

240AA

Abstract: IXTH7P50 Complementary MOSFETs ixys vmk
Contextual Info: il û n MOSFET Modules N-Channel Enhancement Mode Type V oss max. os «nk 1* VMO VMK VMM C ityp. typ. V max. °«, max. *^hJ8 max. pF pF ns nC K/W 4200 135 600 160 0.8 9200 570 400 450 53000 340 600 2300 Package style ' D max. See outlines on page 35/36 Tc = 25-C

to240

Abstract: 165-007T TO-240
Contextual Info: Advanced Technical Information VMK 165-007T VDSS = 70 V Dual Power MOSFET Module ID25 = 165 A RDS on = 7 mW 4 5 Common-Source connected N-Channel Enhancement Mode Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 6.8 kW 1 2 3 6 7

Contextual Info: Advanced Technical Information VMK 165-007T VDSS = 70 V Dual Power MOSFET Module ID25 = 165 A Ω RDS on = 7 mΩ 4 5 Common-Source connected N-Channel Enhancement Mode Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 6.8 kΩ

650-01F

Abstract: DIXYS 8502F c310 vmk 90-02
Contextual Info: DIXYS _ MOSFET Modules v p ^Dfconl DSS Diijon) Contents 0 0} ' Page . max. Tc = 25 °C Tc = 25 °C V A n 100 590 0.0021 > VMO 550-01F C3-2 690 0.0018 >• VMO 650-01F C3-4 200 85 0.025 85 0.025 385 0.0046 420 0.0042 C3-6 VMK 90-02 T2 C3-10

380-02F

Abstract: C314
Contextual Info: MOSFET Modules _ Contents D v DSS ^D co n t max. Tc = 25°C Tc = 25°C V A m ii 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 450 4.6 VMO 450-02F 1> C3-14 500 4.2 VMO 500-02F 2> C3-18 200 TO 240 DS(on)max ^ 0* ^ . VMK 90-02 T2

IXTH7P50

Contextual Info: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *

21N50

Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200

Contextual Info: ixYS VMK 90-02T2 Dual Power MOSFET Module V DSS I D25 = 200 V = 90 A RDS on = 25 m fí Common-Source connected N-Channel Enhancement Mode Avalanche Rated TO-240 AA Preliminary data Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 200 V VDGR

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches