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VMK90 Datasheets (2)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VMK90-02T2		IXYS	200V dual power MOSFET module	Original	PDF	129.77KB	4
VMK90-02T2SN		IXYS	Transistor Mosfet N-CH 200V 83A 3TO-240AA	Original	PDF	129.78KB	4

VMK90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mek75 Abstract: VMO6 Contextual Info: 3URGXFW &KDQJH 1RWLFH 3&1 1R Customer: DOO IXYS product type: 3DFNDJH 72 Description of change: LQWURGXFWLRQ RI QHZ OHDGIUHH SDVWH VROGHULQJ SURFHVV LQ PRGXOH DVVHPEO\ Reason for change: OHDGIUHH VROGHULQJ LPSURYHG WKHUPDO SHUIRUPDQFH E\ EHWWHU GLH DWWDFK TXDOLW\	Original	14f12 vmk90 vmk165 vmm45 +8vmo40 vmo60 mcc21 mcc26 mcc44 mcc56 mek75 vmo6	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	o-263 o-263aa o-247 ixga10n60a +14ixga24n60a ixgh32n60b ixgh50n60as ixga10n60u1 30n50 mosfet dse119-06as vm0400-02f mcc smd diode 300-06da smd43 35-06as 500-06da 250-12da mosfet p channel	PDF
Contextual Info: Dual Power M O SFET Module VM K 90-02T2 VD S S D 25 45 Common-Source connected N-Channel Enhancement Mode 1 2 3 67 Symbol Test Conditions Maximum Ratings Voss T J = 25°C to 150°C 200 V V» T j = 25°C to 150°C; R GS = 6.8 k n 200 V V« Continuous ±20 V	OCR Scan	90-02t2 o-240	PDF

Catalog Datasheet

Type

Document Tags

PDF

mek75

Abstract: VMO6
Contextual Info: 3URGXFW &KDQJH 1RWLFH 3&1 1R Customer: DOO IXYS product type: 3DFNDJH 72 Description of change: LQWURGXFWLRQ RI QHZ OHDGIUHH SDVWH VROGHULQJ SURFHVV LQ PRGXOH DVVHPEO\ Reason for change: OHDGIUHH VROGHULQJ LPSURYHG WKHUPDO SHUIRUPDQFH E\ EHWWHU GLH DWWDFK TXDOLW\

Original

14f12 vmk90 vmk165 vmm45 +8

PDF

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600

OCR Scan

o-263 o-263aa o-247 ixga10n60a +14

PDF

Contextual Info: Dual Power M O SFET Module VM K 90-02T2 VD S S D 25 45 Common-Source connected N-Channel Enhancement Mode 1 2 3 67 Symbol Test Conditions Maximum Ratings Voss T J = 25°C to 150°C 200 V V» T j = 25°C to 150°C; R GS = 6.8 k n 200 V V« Continuous ±20 V

OCR Scan

90-02t2 o-240

PDF