TO240 Search Results

Ultra Low Noise Power Supply

Abstract: ABPSM-ULN-A
Contextual Info: ULTRA LOW NOISE POWER SUPPLY MODULE ABPSM-ULN-A Pb RoHS Compliant | | | | | | | | | | | | | | | FEATURES: APPLICATIONS: • AC Adapter Input Voltage 100VAC to240VAC; 50Hz and 60Hz cycles • Lab Grade Power Supply designed to replace bulky & noisy power •

Westinghouse diode

Abstract: westinghouse DIODES Hawker SW18HHR320 westcode diodes S
Contextual Info: WESTCODE SEM IC O N D U C TO R S 3 ^ E D • ^ 7 0 ^ 5 5 G O D E S S I T ■ liJESB r - o i TECHNICAL PUBLICATION WESTCODE ® SEMICONDUCTORS DH320 ISSUE 1 May, 1980 Flat-Base Silicon Rectifier Diodes Type HHN/HHR320 320 amperes average: up to2400 volts Vrrm

HHR-380

Abstract: westinghouse DIODES Hawker SW16HHR380 MJ200 Westinghouse diode
Contextual Info: liiESTCODE SEMICONDUCTORS 3TE D • TVÜTiSS 0G02S31 7 ■ lilESB 7-ô l-2 $ ""V TECH N ICAL PUBLICATION WESTCODE @ SEMICONDUCTORS D H 380 ISSUE 1 May, 1980 Flat-Base Silicon Rectifier Diodes Type HHN/HHR380 3 7 0 amperes average: up to2400 volts Vrrm R A T IN G S

Contextual Info: Ramp/Soak Temperature/ Process Controller with Fuzzy Logic Model CN3251-R $ 410 Shown ߜ Dual PID + Fuzzy Logic Control ߜ Up to Five Outputs– Control, Alarm or Event ߜ Universal Sensor Input ߜ Switching Power Supply 100 to240 Vac or Optional 12 to 24 Vac/Vdc

SW22CXC320

Abstract: C320 CXC320 westcode diodes C-I-70C
Contextual Info: WESTCODE SEMICONDUCTORS BSE ^70^=135 D DD02S17 5 • lilESB T - o i - ¿ 3 T E C H N IC A L PU B LIC A T IO N WESTCODE SEMICONDUCTORS DC 320 IS S U E 2 May, 1989 Ceramic Capsule Silicon Diodes Type CXC 320 620 amperes average: up to2400 volts VRRM R A T IN G S

CXC380

Abstract: C380 SW22CXC380 westcode diodes SN151JL westcode diode
Contextual Info: l i l ESTCODE SEMICONDUCTORS 3TE D • TTO^SS 000251^ b ■ I1I E S B 7- 0 / - 2.2 T E C H N IC A L P U B LIC A TIO N $ WESTCODE 0 SEMICONDUCTORS D C 380 IS S U E 2 May, 1989 Ceramic Capsule Silicon Diodes Type CXC380 640 amperes average: up to2400 volts VRRM

phr320

Abstract: Hawker WESTINGHOUSE DIODE P320 SW18PHR320 westinghouse DIODES WESTINGHOUSE rectifier
Contextual Info: 9709955 ^34 WESTCODE SEM ICO NDUCTO RS 1 1 ^ 1 ^ 7 0 ^ 5 5 O O O m t.3 34C 0 1 4 6 3 D'~iCÛ\-''22> ^~ m T E C H N IC A L P U B L IC A T IO N WESTCODE SEMICONDUCTORS D P320 ISSUE 1 May, 1980 Stud-Base Silicon Rectifier Diodes Type PH N /PH R 320 320amperes average: up to2400 volts VRRM

Contextual Info: VSKDS201/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 100 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS Directive 2002/95/EC

Contextual Info: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996

TO 48 THYRISTOR FAST SWITCHING

Abstract: thyristor green 4S30S
Contextual Info: D6DET Timers - DELTA series ON delay two wire connection 4 time ranges 1 thyristor Width 22.5mm Industrial design Technical data 1. Functions 7. Accuracy E Base accuracy: Adjustment accuracy: Repetition accuracy: Voltage influence: Temperature influence: ON delay

vmo60

Abstract: ID100 VMO60-05F
Contextual Info: HiPerFETTM Power Module VMO 60-05F VDSS = 500 V ID25 = 60 A RDS on = 65 mW High dv/dt, Low trr, HDMOSTM Family 1 TO-240 AA 3 6 1 5 Preliminary Data 5 6 3 1 = Drain 5 = Gate Symbol Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW

MCC 90 14io8

Abstract: ixys MCC 21 THYRISTOR MODULE IXYS MCC 310 ixys MCC 90
Contextual Info: MCC 21 Thyristor Modules VRRM VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 5 2 TO-240 AA 1 3 6 7 4 5 MCC 21-08io8 B MCC 21-12io8 B MCC 21-14io8 B MCC 21-16io8 B Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0

72-16N1

Abstract: 72-08N1B MDA 800 72 diode 72-08N1
Contextual Info: MDD 72 MDA 72 Diode Modules 3 VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 2 MDD MDD 72-08N1 B MDD 72-12N1 B MDD 72-14N1 B MDD 72-16N1 B MDD 72-18N1 B MDA 72-08N1 B -MDA 72-14N1 B MDA 72-16N1 B - 1 2 MDA Test Conditions TVJ = TVJM TC = 92°C; 180° sine

mee transient

Abstract: 95-06DA
Contextual Info: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

vskh91

Abstract: VSKT91
Contextual Info: VSKT91., VSKH91., VSKL91., VSKN91. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996

vsku41

Contextual Info: VSKU41., VSKV41., VSKU56., VSKV56. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 45 A/60 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC

mcc 19-08io8 b

Abstract: THYRISTOR MODULE MCC 25 19-12io1 IXYS MCC 162
Contextual Info: Thyristor Modules MCC 19 ITRMS = 2 x 40 A ITAVM = 2 x 25 A VRRM = 800 - 1600 V TO-240 AA VRSM VRRM VDSM VDRM V V Version 1 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 19-08io1 B MCC 19-12io1 B MCC 19-14io1 B MCC 19-16io1 B MCC 19-08io8 B MCC 19-12io8 B

M5 DIODE 22-35 L

Abstract: 95-18N1 DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 95-16N1 9512 ixys mdd
Contextual Info: Diode Modules MDD 95 IFRMS = 2 x 180 A IFAVM = 2 x 120 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 180 A 120 A 50/60 Hz, RMS

56-12io8

Abstract: 56-14io8 ixys mcc 56 US65 150AF 56-08io8 THYRISTOR MODULE MCC 25
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 56 ITRMS = 2 x 100 A MCD 56 ITAVM = 2 x 64 A VRRM = 800 - 1800 V TO-240 AA VRSM VRRM Type VDSM VDRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 56-08io1 B MCC 56-12io1 B

72-16N1

Abstract: diode aa 113 DIODE 22-35 L
Contextual Info: Diode Modules MDD 72 IFRMS = 2 x 180 A IFAVM = 2 x 113 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 2 2 1 MDD 72-08N1 B MDD 72-12N1 B MDD 72-14N1 B MDD 72-16N1 B MDD 72-18N1 B Symbol IFRMS IFAVM Test Conditions

44-12N1

Abstract: M5 DIODE 22-35 L M5 DIODE 22-35 K/M5 DIODE 22-35 L 44-08N1
Contextual Info: Diode Modules MDD 44 IFRMS = 2 x 100 A I FAVM = 2 x 64 A VRRM = 800 - 1800 V VRSM VRRM V V 3 Type 1 2 2 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS I FAVM Test Conditions TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine I FSM TVJ = 45°C;

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA VRRM = 600 V lFAV = t[r = 250 ns TO-240 AA V_ V_ 600 MEA95- 06 DA 600 1 2 95 A 3 MEK 95- 06 DA 3 1 2 3 i_ - i i _ Symbol Test C onditions

ib5 zener

Abstract: IRFK4H150 E78996 rectifier module IRFK4H151 welder mosfet 446B F-46
Contextual Info: HE I MÖ55452 00G100Q â I Data Sheet No. PD-9.446B I NT ERNATI ONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T -39-27 RECOGNIZED HEXPAK POWER MODULE IRFK4H150 IRFK4H151 F ite no E7Ö996 Isolated Base Power HEXFET Parallel Assembly Features: 100 Volt, 14 mQ HEXPAK

IRK E78996

Abstract: IRK E78996 701819-303ac IRK 160 IRK 91 IRK E78996 p432 I27900 E78996 91 series TO-240AA
Contextual Info: Bulletin I27141 rev. F 10/02 IRK.91 SERIES ADD-A-pakTM GEN V Power Modules STANDARD DIODES Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage