IXYS IXTN 79N20 Search Results

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

ixys ixtn 79n20

Abstract: IXTN max4458 IXTN79N20
Contextual Info: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

ixys ixtn 79n20

Abstract: 79N20 IXTN79N20 ixtn 79n20
Contextual Info: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient

MOSFET 11N80 Data sheet

Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXTN79N20

Contextual Info: IXTN79N20 VDSS MegaMOS FET D25 RDS on = 200 V = 85 A = 25 mil N-Channel Enhancement Mode Sym bol V ¥ dss Test C onditions Maximum Ratings Tj = 25°C to150°C 200 V Tj = 25°C to 150°C; RGS = 10 k£S 200 V Vas Continuous ±20 V Vas« T ransient ±30 V

Contextual Info: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR

IXTN79N20

Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Contextual Info: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM

diode T88

Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Contextual Info: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30