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    IXTQ Search Results

    IXTQ Datasheets (84)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTQ100N25P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 619.22KB 5
    IXTQ102N15T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-3P Original PDF 7
    IXTQ10P50P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-3P Original PDF 6
    IXTQ110N055P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 591.98KB 5
    IXTQ110N10P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 588.82KB 5
    IXTQ120N15P
    IXYS PolarHT Power MOSFET Original PDF 588.23KB 5
    IXTQ120N20P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 611.61KB 5
    IXTQ130N10T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P Original PDF 5
    IXTQ130N15T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 130A TO-3P Original PDF 5
    IXTQ140N10P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 589.68KB 5
    IXTQ14N60P
    IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 84.26KB 2
    IXTQ14N60P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-3P Original PDF 5
    IXTQ150N06P
    IXYS PolarHT Power MOSFET N-Channel Enhancement Mode Original PDF 561.62KB 5
    IXTQ150N15P
    IXYS PolarHT Power MOSFET Original PDF 611.58KB 5
    IXTQ152N085T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 152A TO-3P Original PDF 5
    IXTQ160N075T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-3P Original PDF 5
    IXTQ160N085T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 160A TO-3P Original PDF 5
    IXTQ160N10T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 160A TO-3P Original PDF 5
    IXTQ16N50P
    IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 146.01KB 4
    IXTQ170N10P
    IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 634.02KB 5
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    IXTQ Price and Stock

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    Littelfuse Inc IXTQ26N50P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/Tube |Littelfuse IXTQ26N50P
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    Arrow Electronics IXTQ26N50P 1 1
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    Littelfuse Inc IXTQ36P15P

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    Littelfuse Inc IXTQ52N30P

    Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-3P
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    IXYS Corporation IXTQ52N30P

    Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-3P
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    Newark IXTQ52N30P Bulk 296 1
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    TTI IXTQ52N30P Tube 300
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    Littelfuse Inc IXTQ69N30P

    Trans MOSFET N-CH 300V 69A 3-Pin(3+Tab) TO-3P
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    Verical IXTQ69N30P 295 7
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    IXTQ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ48N20T

    Abstract: IXTP48N20T IXTP48N20 48N20 42100I
    Contextual Info: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS


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    ixta48n20tixtp48n20tixtq48n20to-263+8o-220ab062inplastic6048n20t2-12-10-aixtp48n2048n2042100i PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Contextual Info: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


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    ixtt170n10pixtq170n10pixtk170n10po-268+2170n10p01-07-10-c PDF

    IXTQ69N30PM

    Abstract: IXTQ69N30 ixtq69n30p
    Contextual Info: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


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    ixtq69n30pm100ms69n30p0-16-09-a+2ixtq69n30ixtq69n30p PDF

    AA145

    Abstract: IXTQ470P2 IXTQ
    Contextual Info: Advance Technical Information IXTQ470P2 PolarP2TM Power MOSFET VDSS ID25 RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500


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    ixtq470p2400ns338b2aa145+1ixtq PDF

    IXTP450P2

    Abstract: IXTH450P2 IXTQ450P2
    Contextual Info: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings


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    ixtp450p2ixtq450p2ixth450p2400ns+2o-220ab338b2 PDF

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


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    o-263ixta36p15pixtp36p15pixtq36p15p+5o-220100ms36p15p36p153-26-08-b PDF

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


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    o-263ixta10p50pixth10p50pixtp10p50p+6ixtq10p50po-247o-220100ms10p50pixth10p50 PDF

    52P10p

    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


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    o-263ixta52p10pixth52p10pixtp52p10p+5ixtq52p10po-247o-220100ms52p10p PDF

    Contextual Info: Advance Technical Infomation Trenchgate Power MOSFET IXTQ 64N28T VDSS ID25 RDS on = 280 V = 64 A Ω = 49 mΩ N-Channel Enhancement Mode For Plasma Display Application Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    64n28t PDF

    22N50P

    Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
    Contextual Info: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    22n50p22n50pso-247plus220+4ixtq 22n50pixtq22n50p22n50ixth 22n50p PDF

    180N055T

    Contextual Info: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    180n055to-220 PDF

    Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


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    isoplus220tm180n055to-220123b1+3728b1065b1ixtp180n055t PDF

    IXTA32P20T

    Abstract: ixth32p20t IXTQ32P20T IXTP32P20T
    Contextual Info: Preliminary Technical Information IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions VDSS TJ = 25°C to 150°C


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    o-263ixta32p20tixtp32p20tixtq32p20t+3ixth32p20to-220abo-247 PDF

    Contextual Info: IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS Transient ±20


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    69n30po-268 PDF

    Contextual Info: IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    62n15po-263o-220 PDF

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V


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    ixth160n10tixtq160n10to-247160n10t+11-16-06-a PDF

    23N60

    Contextual Info: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    23n60q728b1123b1065b1+123n60 PDF

    Contextual Info: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    18n60p18n60ps PDF

    Contextual Info: Preliminary Technical Information IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


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    ixta90n15tixth90n15tixtp90n15tixtq90n15t+4o-263o-24790n15t8-07-a PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


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    30n50p30n50pso-247plus220 PDF

    82N25P

    Abstract: TO-264 Package 5 lead 82n25 C500W ixtq IXYS 82N25P Ixtq82n25p
    Contextual Info: IXTK 82N25P IXTQ 82N25P IXTT 82N25P PolarHTTM Power MOSFET VDSS ID25 = 250 V = 82 A ≤ 35 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


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    82n25pto-264 package 5 lead82n25c500w+3ixtqixys 82n25pixtq82n25p PDF

    Contextual Info: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS on 250 V 64 A Ω 49 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGSS VGSM Continuous


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    64n25po-268 PDF

    10P50P

    Abstract: IXTP10P50P IXTH10P50P IXTA10P50P IXTQ10P50P IXTP10P50 IXTH10P50
    Contextual Info: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixta10p50pixth10p50pixtp10p50pixtq10p50p+7o-263o-220o-247100ms10p50pixtp10p50ixth10p50 PDF

    22n60p

    Abstract: 22n60 IXTQ22N60P PLUS220SMD
    Contextual Info: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    22n60p22n60ps22n60ixtq22n60p+1plus220smd PDF