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    IXTK170N10P Search Results

    IXTK170N10P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTK170N10P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 170A TO-264 Original PDF 5
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    IXTK170N10P Price and Stock

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    IXYS Corporation IXTK170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
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    TME IXTK170N10P 1
    • 1 $10.92
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    • 100 $8.81
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    Mouser Electronics IXTK170N10P
    • 1 $17.10
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    • 100 $9.73
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    TTI IXTK170N10P Tube 300
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    Littelfuse Inc IXTK170N10P

    Disc Mosfet N-Ch Std-Polar To-264(3)/ Tu; |Littelfuse IXTK170N10P
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    Newark () IXTK170N10P Bulk 300
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    IXTK170N10P Bulk 1
    • 1 $14.10
    • 10 $13.19
    • 100 $12.81
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    RS IXTK170N10P Bulk 8 Weeks 25
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    Onlinecomponents.com IXTK170N10P
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    IXTK170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Contextual Info: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixtt170n10pixtq170n10pixtk170n10po-268+2170n10p01-07-10-c PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT170N10P IXTQ170N10P IXTK170N10P = 100V = 170A ≤ 9mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixtt170n10pixtq170n10pixtk170n10po-268+2170n10p01-07-10-c PDF