23N60 Search Results

Contextual Info: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

23N60

Contextual Info: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

SGW23N60UFD

Contextual Info: SGW 23N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

SGW23N60UF

Contextual Info: SGW 23N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply

Contextual Info: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data

Contextual Info: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class = = = 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

23N60

Abstract: 23n60c5 E72873 IXKC23N60C5 18A60
Contextual Info: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

23N60

Abstract: G 23N60 SiS 961 IXTQ23N60Q 123b1
Contextual Info: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

23N60

Abstract: E72873 A6014
Contextual Info: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data

Contextual Info: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

23N60

Abstract: G 23N60 transistor N 343 AD 123B1
Contextual Info: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

Contextual Info: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

23N60E

Abstract: 23N60 FMH23N60E electric
Contextual Info: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

23N60

Abstract: 23N60E
Contextual Info: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

23N60ES

Abstract: 23N60
Contextual Info: DATE CHECKED Sep.-25-'08 CHECKED Sep.-25-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

23N60

Abstract: 23N60ES ic MARKING QG FMH23N60E
Contextual Info: DATE CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

23N60E

Contextual Info: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor