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    18N60P Search Results

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    18N60P Price and Stock

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    Littelfuse Inc IXFH18N60P

    Mosfet, N-Ch, 600V, 18A, To-247Ad-3; |Littelfuse IXFH18N60P
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    Newark () IXFH18N60P Bulk 1
    • 1 $6.92
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    IXFH18N60P Bulk 300
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    • 10000 $3.45
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    RS IXFH18N60P Bulk 8 Weeks 30
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    Littelfuse Inc IXTQ18N60P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ18N60P
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    Newark IXTQ18N60P Bulk 300
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    RS IXTQ18N60P Bulk 8 Weeks 30
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    IXYS Corporation IXFH18N60P

    MOSFETs 600V 18A
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    TTI IXFH18N60P Tube 300
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    TME IXFH18N60P 300 1
    • 1 $8.14
    • 10 $5.28
    • 100 $4.51
    • 1000 $4.36
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    IXYS Corporation IXTQ18N60P

    MOSFETs 18.0 Amps 600 V 0.42 Ohm Rds
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    TTI IXTQ18N60P Tube 300
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    TME IXTQ18N60P 1
    • 1 $5.15
    • 10 $4.09
    • 100 $3.68
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    18N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    18n60p18n60ps PDF

    IXTV18N60P

    Abstract: PLUS220SMD
    Contextual Info: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


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    18n60p18n60psplus220ixtv18n60p+22005ixysplus220smd PDF

    Contextual Info: IXTQ 18N60P IXTT 18N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 18 A ≤ 400 mΩ Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


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    18n60po-268405b2 PDF

    PLUS220SMD

    Contextual Info: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    18n60p18n60psplus220smd PDF

    N-channel MOSFET to-247

    Abstract: PLUS220SMD
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr = = ≤ ≤ 600 V 18 A Ω 400 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    18n60p18n60pso-247plus220+315ltsn-channel mosfet to-247plus220smd PDF

    18N60P

    Abstract: PLUS220SMD IXFH18N60P 18N60PS 18N60
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS


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    18n60p18n60psplus220smdixfh18n60p+118n60 PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    18n60p18n60pso-247plu30 PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    ixfr48n60p18n60p30n60p22n60p+1536n60p26n60p48n60pplus220ixtv22n50ps2n60pgsm based speed control of single phase induction motorthyristor family48n60600v 20 amp mosfet14n60300v hiperfet power mosfet single die mosfetwireless a.c motor speed controlling systemixys scr module gate drive15n60p PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF