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    IXTV18N60P Search Results

    IXTV18N60P Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTV18N60P
    		IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 178.19KB 5
    IXTV18N60PS
    		IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 178.19KB 5

    IXTV18N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTV18N60P

    Abstract: PLUS220SMD
    Contextual Info: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		18n60p18n60psplus220ixtv18n60p+22005ixysplus220smd PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250 PDF