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    IXTT170N10P Search Results

    IXTT170N10P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT170N10P
    		IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 634.02KB 5
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    IXTT170N10P Price and Stock

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    IXYS Corporation IXTT170N10P

    Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
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    TME IXTT170N10P 500 1
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    Verical IXTT170N10P 500 5
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    Mouser Electronics IXTT170N10P
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    Newark IXTT170N10P Bulk 282 1
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    Future Electronics IXTT170N10P Tube 37 Weeks 300
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    IXYS Corporation IXTT170N10P-TR

    Transistor: N-MOSFET; 100V; 170A; 715W; D3PAK,TO268; 120ns
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    TME IXTT170N10P-TR 400
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    Mouser Electronics IXTT170N10P-TR
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    Littelfuse Inc IXTT170N10P-TR

    Ixtt170N10P Tr/ T&r; |Littelfuse IXTT170N10P-TR
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    Newark IXTT170N10P-TR Tape & Reel 400
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    RS IXTT170N10P-TR Bulk 8 Weeks 400
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    Onlinecomponents.com IXTT170N10P-TR
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    Littelfuse Inc IXTT170N10P

    Disc Mosfet N-CH Std-Polar TO-268AA
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    RS IXTT170N10P Bulk 8 Weeks 30
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    Onlinecomponents.com IXTT170N10P
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    IXTT170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Contextual Info: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixtt170n10pixtq170n10pixtk170n10po-268+2170n10p01-07-10-c PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT170N10P IXTQ170N10P IXTK170N10P = 100V = 170A ≤ 9mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		ixtt170n10pixtq170n10pixtk170n10po-268+2170n10p01-07-10-c PDF