IXTA Search Results
IXTA Datasheets (197)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXTA02N250 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA02N250HV |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263 | Original | 184.84KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA02N450HV |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 200MA TO263 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA05N100 |
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1000V high voltage MOSFET | Original | 69.11KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA05N100HV |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1KV 750MA TO263 | Original | 194.4KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA05N100SN |
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Transistor Mosfet N-CH 1000V 0.75A 3TO-263 AA | Original | 544.93KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA06N120P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA08N100D2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA D2PAK | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA08N100D2HV |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH | Original | 194.11KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA08N100P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA08N120P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.8A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA08N50D2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA D2PAK | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA100N04T2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA100N15X4 |
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MOSFET N-CH 150V 100A TO263AA | Original | 246.82KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXTA102N15T |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-263 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA10N60P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA10P50P |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA10P50P-TRL |
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MOSFET P-CH 500V 10A TO263 | Original | 180.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA10P50PTRL |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263AA | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA10P50P-TRL |
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MOSFET P-CH 500V 10A TO263 | Original | 188.12KB |
IXTA Price and Stock
IXYS Corporation IXTA10P50P-TRLMOSFET P-CH 500V 10A TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA10P50P-TRL | Reel | 59,200 | 800 |
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IXTA10P50P-TRL | 2,992 | 3 |
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IXYS Corporation IXTA06N120P-TRLMOSFET N-CH 1200V 600MA TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA06N120P-TRL | Digi-Reel | 6,707 | 1 |
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Littelfuse Inc IXTA36P15P-TRLMOSFET P-CH 150V 36A TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA36P15P-TRL | Digi-Reel | 2,508 | 1 |
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Littelfuse Inc IXTA26P20P-TRLMOSFET P-CH 200V 26A TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA26P20P-TRL | Cut Tape | 1,043 | 1 |
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IXTA26P20P-TRL | 2,020 |
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Littelfuse Inc IXTA130N10TMOSFET N-CH 100V 130A TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA130N10T | Tube | 400 | 1 |
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IXTA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXTP220N04T2
Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
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IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 | |
3N120
Abstract: on6017 IXTP3N120
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3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120 | |
1n80Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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O-263 O-252 728B1 1n80 | |
8N50PContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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8N50P O-263 O-220 O-263 O-220) 8N50P | |
siemens i
Abstract: 05N100
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05N100 O-220AB O-263 siemens i | |
1N100Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM |
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1N100 O-263 O-220AB 1N100 | |
5n60pContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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5N60P O-220 O-263 O-263 O-220) 405B2 5n60p | |
IXTQ48N20T
Abstract: IXTP48N20T IXTP48N20 48N20 42100I
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IXTA48N20T IXTP48N20T IXTQ48N20T O-263 O-220AB 062in. Plastic60 48N20T 2-12-10-A IXTQ48N20T IXTP48N20T IXTP48N20 48N20 42100I | |
IXTY1R6N50D2
Abstract: IXTP1R6N50D2
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IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2 | |
32P05TContextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTA32P05T IXTP32P05T O-263 32P05T 1-22-10-A | |
36p15
Abstract: IXTP36P15P 3-26-08-B
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O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B | |
IXTP10P50P
Abstract: 10P50P IXTH10P50P IXTH10P50
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O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50 | |
52P10pContextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS |
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O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p | |
3n120
Abstract: 3N110 98844
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3N120 3N110 3N110 O-220 O-263 98844 | |
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T1N200Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A 40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000 |
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IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200 | |
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P | |
Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P | |
Contextual Info: Preliminary Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA 625 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C |
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IXTA02N450HV IXTT02N450HV 200mA O-263HV 100ms 02N450 H5-P640 | |
Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
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12N50P 12N50P O-263 O-220 | |
IXTA90N055T2
Abstract: *9956b IXTY90N055T2 IXTY90N055T
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IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 062in. O-220) O-252 O-220 *9956b IXTY90N055T | |
9N60
Abstract: MOSFET IXYS TO-263
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9N60P 9N60P O-220 O-263 405B2 9N60 MOSFET IXYS TO-263 | |
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol |
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IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D | |
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings |
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5N50P 5N50P O-220 O-263 | |
ixtp15n50l2Contextual Info: IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Linear L2TM Power MOSFETs w/ Extended FBSOA VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 500V 15A Ω 480mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 O-263 O-220AB O-247 100ms |