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    IXTA Search Results

    IXTA Datasheets (197)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA02N250
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263 Original PDF 5
    IXTA02N250HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263 Original PDF 184.84KB
    IXTA02N450HV
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 200MA TO263 Original PDF 5
    IXTA05N100
    IXYS 1000V high voltage MOSFET Original PDF 69.11KB 2
    IXTA05N100HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1KV 750MA TO263 Original PDF 194.4KB
    IXTA05N100SN
    IXYS Transistor Mosfet N-CH 1000V 0.75A 3TO-263 AA Original PDF 544.93KB 4
    IXTA06N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263 Original PDF 4
    IXTA08N100D2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA D2PAK Original PDF 5
    IXTA08N100D2HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF 194.11KB
    IXTA08N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263 Original PDF 4
    IXTA08N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.8A TO-263 Original PDF 4
    IXTA08N50D2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA D2PAK Original PDF 5
    IXTA100N04T2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 Original PDF 6
    IXTA100N15X4
    IXYS MOSFET N-CH 150V 100A TO263AA Original PDF 246.82KB
    IXTA102N15T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-263 Original PDF 7
    IXTA10N60P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK Original PDF 4
    IXTA10P50P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263 Original PDF 6
    IXTA10P50P-TRL
    IXYS MOSFET P-CH 500V 10A TO263 Original PDF 180.68KB
    IXTA10P50PTRL
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263AA Original PDF 6
    IXTA10P50P-TRL
    IXYS MOSFET P-CH 500V 10A TO263 Original PDF 188.12KB
    ...
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    IXTA Price and Stock

    Littelfuse Inc

    Littelfuse Inc IXTA3N120-TRL

    IXTA3N120 TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics IXTA3N120-TRL 800
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    • 100 $5.69
    • 1000 $5.40
    • 10000 $5.11
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    Newark () IXTA3N120-TRL Tape & Reel 568 10
    • 1 $10.93
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    • 100 $5.83
    • 1000 $5.48
    • 10000 $5.25
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    IXTA3N120-TRL Cut Tape 568 1
    • 1 $10.93
    • 10 $10.93
    • 100 $5.83
    • 1000 $5.48
    • 10000 $5.25
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    Littelfuse Inc IXTA10P50P-TRL

    IXTA10P50P TRL
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    Master Electronics IXTA10P50P-TRL 800
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    • 100 $4.68
    • 1000 $4.09
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    Newark () IXTA10P50P-TRL Tape & Reel 608 10
    • 1 $9.92
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    • 100 $4.75
    • 1000 $4.47
    • 10000 $4.28
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    IXTA10P50P-TRL Cut Tape 608 1
    • 1 $9.92
    • 10 $9.92
    • 100 $4.75
    • 1000 $4.47
    • 10000 $4.28
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    Littelfuse Inc IXTA26P20P-TRL

    IXTA26P20P TRL
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    Master Electronics IXTA26P20P-TRL 700
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    Newark () IXTA26P20P-TRL Tape & Reel 560 10
    • 1 $9.36
    • 10 $9.36
    • 100 $4.75
    • 1000 $4.47
    • 10000 $4.28
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    IXTA26P20P-TRL Cut Tape 560 1
    • 1 $9.36
    • 10 $9.36
    • 100 $4.75
    • 1000 $4.47
    • 10000 $4.28
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    RS IXTA26P20P-TRL Bulk 8 Weeks 800
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    • 10000 $6.57
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    Rutronik IXTA26P20P-TRL Tape & Reel 1,600 800
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    • 1000 $4.65
    • 10000 $4.65
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    Littelfuse Inc IXTA26P20P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics IXTA26P20P 300
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    • 1000 $3.96
    • 10000 $3.84
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    Verical () IXTA26P20P 300 50
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    • 100 $5.87
    • 1000 $5.33
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    IXTA26P20P 50 50
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    • 100 $3.66
    • 1000 $3.66
    • 10000 $3.66
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    Littelfuse Inc IXTA52P10P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics IXTA52P10P 300
    • 1 -
    • 10 -
    • 100 $4.09
    • 1000 $3.86
    • 10000 $3.83
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    Verical () IXTA52P10P 300 50
    • 1 -
    • 10 -
    • 100 $5.13
    • 1000 $4.88
    • 10000 $4.88
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    IXTA52P10P 50 50
    • 1 -
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    • 100 $4.21
    • 1000 $4.21
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    IXTA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP220N04T2

    Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
    Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


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    ixta220n04t2ixtp220n04t2o-263o-220+6220n04t204-24-08-cixtp 220n04t2220n04ixtp220220a-75 PDF

    3N120

    Abstract: on6017 IXTP3N120
    Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS


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    3n120o-220728b1123b1+3065b1on6017ixtp3n120 PDF

    1n80

    Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    o-263o-252728b11n80 PDF

    8N50P

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    8n50po-263o-220 PDF

    siemens i

    Abstract: 05N100
    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


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    05n100o-220abo-263siemens i PDF

    1N100

    Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


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    1n100o-263o-220ab PDF

    5n60p

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    5n60po-220o-263405b2 PDF

    IXTQ48N20T

    Abstract: IXTP48N20T IXTP48N20 48N20 42100I
    Contextual Info: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS


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    ixta48n20tixtp48n20tixtq48n20to-263+8o-220ab062inplastic6048n20t2-12-10-aixtp48n2048n2042100i PDF

    IXTY1R6N50D2

    Abstract: IXTP1R6N50D2
    Contextual Info: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


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    ixty1r6n50d2ixta1r6n50d2ixtp1r6n50d2o-252+3o-220o-263o-220ab PDF

    32P05T

    Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixta32p05tixtp32p05to-26332p05t+11-22-10-a PDF

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


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    o-263ixta36p15pixtp36p15pixtq36p15p+5o-220100ms36p15p36p153-26-08-b PDF

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


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    o-263ixta10p50pixth10p50pixtp10p50p+6ixtq10p50po-247o-220100ms10p50pixth10p50 PDF

    52P10p

    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


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    o-263ixta52p10pixth52p10pixtp52p10p+5ixtq52p10po-247o-220100ms52p10p PDF

    3n120

    Abstract: 3N110 98844
    Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    3n1203n110o-220o-263+198844 PDF

    T1N200

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


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    ixta1n200p3hvixth1n200p3o-263hvid110+3100ms1n200p3t1n200 PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    ixta08n100pixtp08n100pixty08n100po-263+108n100p PDF

    Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    ixta1r4n100pixtp1r4n100pixty1r4n100po-263+11r4n100p PDF

    Contextual Info: Preliminary Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA   625 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


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    ixta02n450hvixtt02n450hv200mao-263hv+3100ms02n450h5-p640 PDF

    Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


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    12n50po-263o-220 PDF

    IXTA90N055T2

    Abstract: *9956b IXTY90N055T2 IXTY90N055T
    Contextual Info: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


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    ixty90n055t2ixta90n055t2ixtp90n055t2o-252+5o-263062ino-2209956bixty90n055t PDF

    9N60

    Abstract: MOSFET IXYS TO-263
    Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM


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    9n60po-220o-263405b2+29n60mosfet ixys to-263 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol


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    ixta7n60pmixtp7n60pmo-2207n60p+106-17-08-d PDF

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


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    5n50po-220o-263 PDF

    ixtp15n50l2

    Contextual Info: IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Linear L2TM Power MOSFETs w/ Extended FBSOA VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 500V 15A Ω 480mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    ixta15n50l2ixtp15n50l2ixth15n50l2o-263+3o-220abo-247100ms PDF