IXTA Search Results
IXTA Datasheets (197)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXTA02N250 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N250HV | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263 | Original | 184.84KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N450HV | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 200MA TO263 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100 | IXYS | 1000V high voltage MOSFET | Original | 69.11KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100HV | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1KV 750MA TO263 | Original | 194.4KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100SN | IXYS | Transistor Mosfet N-CH 1000V 0.75A 3TO-263 AA | Original | 544.93KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA06N120P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA D2PAK | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2HV | IXYS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH | Original | 194.11KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N100P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N120P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.8A TO-263 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N50D2 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA D2PAK | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA100N04T2 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA100N15X4 | IXYS | MOSFET N-CH 150V 100A TO263AA | Original | 246.82KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA102N15T | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-263 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10N60P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P50P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P50P-TRL | IXYS | MOSFET P-CH 500V 10A TO263 | Original | 180.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P50PTRL | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263AA | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P50P-TRL | IXYS | MOSFET P-CH 500V 10A TO263 | Original | 188.12KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA Price and Stock
Littelfuse Inc IXTA3N120-TRLIXTA3N120 TRL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA3N120-TRL | 800 |
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Buy Now | |||||||
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IXTA3N120-TRL | Tape & Reel | 568 | 10 |
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| IXTA3N120-TRL | Cut Tape | 568 | 1 |
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Littelfuse Inc IXTA10P50P-TRLIXTA10P50P TRL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA10P50P-TRL | 800 |
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Buy Now | |||||||
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IXTA10P50P-TRL | Tape & Reel | 608 | 10 |
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Buy Now | |||||
| IXTA10P50P-TRL | Cut Tape | 608 | 1 |
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Littelfuse Inc IXTA26P20P-TRLIXTA26P20P TRL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA26P20P-TRL | 700 |
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Buy Now | |||||||
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IXTA26P20P-TRL | Tape & Reel | 560 | 10 |
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| IXTA26P20P-TRL | Cut Tape | 560 | 1 |
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IXTA26P20P-TRL | Bulk | 8 Weeks | 800 |
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Get Quote | |||||
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IXTA26P20P-TRL | Tape & Reel | 1,600 | 800 |
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Littelfuse Inc IXTA26P20P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA26P20P | 300 |
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Buy Now | |||||||
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IXTA26P20P | 300 | 50 |
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| IXTA26P20P | 50 | 50 |
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Littelfuse Inc IXTA52P10P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTA52P10P | 300 |
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IXTA52P10P | 300 | 50 |
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| IXTA52P10P | 50 | 50 |
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IXTA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IXTP220N04T2
Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
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ixta220n04t2ixtp220n04t2o-263o-220+6 | |
3N120
Abstract: on6017 IXTP3N120
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3n120o-220728b1123b1+3 | |
1n80Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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o-263o-252728b11n80 | |
8N50PContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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8n50po-263o-220 | |
siemens i
Abstract: 05N100
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05n100o-220abo-263siemens i | |
1N100Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM |
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1n100o-263o-220ab | |
5n60pContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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5n60po-220o-263405b2 | |
IXTQ48N20T
Abstract: IXTP48N20T IXTP48N20 48N20 42100I
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ixta48n20tixtp48n20tixtq48n20to-263+8 | |
IXTY1R6N50D2
Abstract: IXTP1R6N50D2
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ixty1r6n50d2ixta1r6n50d2ixtp1r6n50d2o-252+3 | |
32P05TContextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixta32p05tixtp32p05to-26332p05t+1 | |
36p15
Abstract: IXTP36P15P 3-26-08-B
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o-263ixta36p15pixtp36p15pixtq36p15p+5 | |
IXTP10P50P
Abstract: 10P50P IXTH10P50P IXTH10P50
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o-263ixta10p50pixth10p50pixtp10p50p+6 | |
52P10pContextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS |
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o-263ixta52p10pixth52p10pixtp52p10p+5 | |
3n120
Abstract: 3N110 98844
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3n1203n110o-220o-263+1 | |
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T1N200Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A 40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000 |
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ixta1n200p3hvixth1n200p3o-263hvid110+3 | |
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Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixta08n100pixtp08n100pixty08n100po-263+1 | |
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Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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ixta1r4n100pixtp1r4n100pixty1r4n100po-263+1 | |
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Contextual Info: Preliminary Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA 625 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C |
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ixta02n450hvixtt02n450hv200mao-263hv+3 | |
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Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
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12n50po-263o-220 | |
IXTA90N055T2
Abstract: *9956b IXTY90N055T2 IXTY90N055T
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ixty90n055t2ixta90n055t2ixtp90n055t2o-252+5 | |
9N60
Abstract: MOSFET IXYS TO-263
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9n60po-220o-263405b2+2 | |
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol |
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ixta7n60pmixtp7n60pmo-2207n60p+1 | |
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Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings |
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5n50po-220o-263 | |
ixtp15n50l2Contextual Info: IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Linear L2TM Power MOSFETs w/ Extended FBSOA VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 500V 15A Ω 480mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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ixta15n50l2ixtp15n50l2ixth15n50l2o-263+3 | |