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    IXTA Search Results

    IXTA Datasheets (197)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA02N250
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263 Original PDF 5
    IXTA02N250HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263 Original PDF 184.84KB
    IXTA02N450HV
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 200MA TO263 Original PDF 5
    IXTA05N100
    IXYS 1000V high voltage MOSFET Original PDF 69.11KB 2
    IXTA05N100HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1KV 750MA TO263 Original PDF 194.4KB
    IXTA05N100SN
    IXYS Transistor Mosfet N-CH 1000V 0.75A 3TO-263 AA Original PDF 544.93KB 4
    IXTA06N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263 Original PDF 4
    IXTA08N100D2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA D2PAK Original PDF 5
    IXTA08N100D2HV
    IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF 194.11KB
    IXTA08N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263 Original PDF 4
    IXTA08N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.8A TO-263 Original PDF 4
    IXTA08N50D2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA D2PAK Original PDF 5
    IXTA100N04T2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 Original PDF 6
    IXTA100N15X4
    IXYS MOSFET N-CH 150V 100A TO263AA Original PDF 246.82KB
    IXTA102N15T
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-263 Original PDF 7
    IXTA10N60P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK Original PDF 4
    IXTA10P50P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263 Original PDF 6
    IXTA10P50P-TRL
    IXYS MOSFET P-CH 500V 10A TO263 Original PDF 180.68KB
    IXTA10P50PTRL
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263AA Original PDF 6
    IXTA10P50P-TRL
    IXYS MOSFET P-CH 500V 10A TO263 Original PDF 188.12KB
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    IXTA Price and Stock

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    IXYS Corporation IXTA10P50P-TRL

    MOSFET P-CH 500V 10A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA10P50P-TRL Reel 59,200 800
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    IBS Electronics IXTA10P50P-TRL 2,992 3
    • 1 -
    • 10 $4.94
    • 100 $4.75
    • 1000 $4.55
    • 10000 $4.55
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    IXYS Corporation IXTA06N120P-TRL

    MOSFET N-CH 1200V 600MA TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IXTA06N120P-TRL Digi-Reel 6,707 1
    • 1 $5.31
    • 10 $3.67
    • 100 $2.63
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    IXTA06N120P-TRL Cut Tape 6,707 1
    • 1 $5.31
    • 10 $3.67
    • 100 $2.63
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    IXTA06N120P-TRL Reel 4,800 800
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    • 1000 $2.09
    • 10000 $2.08
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    Littelfuse Inc IXTA36P15P-TRL

    MOSFET P-CH 150V 36A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IXTA36P15P-TRL Digi-Reel 2,508 1
    • 1 $8.03
    • 10 $5.46
    • 100 $4.21
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    IXTA36P15P-TRL Cut Tape 2,508 1
    • 1 $8.03
    • 10 $5.46
    • 100 $4.21
    • 1000 $4.21
    • 10000 $4.21
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    IXTA36P15P-TRL Reel 1,600 800
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    Littelfuse Inc IXTA26P20P-TRL

    MOSFET P-CH 200V 26A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IXTA26P20P-TRL Cut Tape 1,043 1
    • 1 $8.03
    • 10 $5.46
    • 100 $4.21
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    IXTA26P20P-TRL Digi-Reel 1,043 1
    • 1 $8.03
    • 10 $5.46
    • 100 $4.21
    • 1000 $4.21
    • 10000 $4.21
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    IXTA26P20P-TRL Reel 800 800
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    Vyrian IXTA26P20P-TRL 2,020
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    Littelfuse Inc IXTA130N10T

    MOSFET N-CH 100V 130A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA130N10T Tube 400 1
    • 1 $5.62
    • 10 $5.62
    • 100 $2.69
    • 1000 $2.22
    • 10000 $2.22
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    IXTA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP220N04T2

    Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
    Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


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    IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 PDF

    3N120

    Abstract: on6017 IXTP3N120
    Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS


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    3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120 PDF

    1n80

    Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    O-263 O-252 728B1 1n80 PDF

    8N50P

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    8N50P O-263 O-220 O-263 O-220) 8N50P PDF

    siemens i

    Abstract: 05N100
    Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


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    05N100 O-220AB O-263 siemens i PDF

    1N100

    Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


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    1N100 O-263 O-220AB 1N100 PDF

    5n60p

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    5N60P O-220 O-263 O-263 O-220) 405B2 5n60p PDF

    IXTQ48N20T

    Abstract: IXTP48N20T IXTP48N20 48N20 42100I
    Contextual Info: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS


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    IXTA48N20T IXTP48N20T IXTQ48N20T O-263 O-220AB 062in. Plastic60 48N20T 2-12-10-A IXTQ48N20T IXTP48N20T IXTP48N20 48N20 42100I PDF

    IXTY1R6N50D2

    Abstract: IXTP1R6N50D2
    Contextual Info: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


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    IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2 PDF

    32P05T

    Contextual Info: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXTA32P05T IXTP32P05T O-263 32P05T 1-22-10-A PDF

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


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    O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B PDF

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


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    O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50 PDF

    52P10p

    Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


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    O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p PDF

    3n120

    Abstract: 3N110 98844
    Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    3N120 3N110 3N110 O-220 O-263 98844 PDF

    T1N200

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


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    IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200 PDF

    Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P PDF

    Contextual Info: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P PDF

    Contextual Info: Preliminary Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA   625 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


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    IXTA02N450HV IXTT02N450HV 200mA O-263HV 100ms 02N450 H5-P640 PDF

    Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


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    12N50P 12N50P O-263 O-220 PDF

    IXTA90N055T2

    Abstract: *9956b IXTY90N055T2 IXTY90N055T
    Contextual Info: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


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    IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 062in. O-220) O-252 O-220 *9956b IXTY90N055T PDF

    9N60

    Abstract: MOSFET IXYS TO-263
    Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM


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    9N60P 9N60P O-220 O-263 405B2 9N60 MOSFET IXYS TO-263 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol


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    IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D PDF

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


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    5N50P 5N50P O-220 O-263 PDF

    ixtp15n50l2

    Contextual Info: IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Linear L2TM Power MOSFETs w/ Extended FBSOA VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 500V 15A Ω 480mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 O-263 O-220AB O-247 100ms PDF