IXFR Search Results
IXFR Datasheets (96)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXFR100N25 | IXYS | 250V HiPerFET power MOSFET | Original | 81.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR102N30P | IXYS | PolarHT HiPerFET Power MOSFET | Original | 87.41KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR10N100F | IXYS | N-channel Power MOSFETs | Original | 91.67KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR10N100Q | IXYS | 1000V HiPerFET power MOSFET | Original | 33.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR120N20 | IXYS | 200V HiPerFET power MOSFET | Original | 34.27KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR120N25P | IXYS | PolarHT HiPerFET Power MOSFET | Original | 88.11KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N100F | IXYS | N-channel Power MOSFETs | Original | 91.67KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N100Q | IXYS | 1000V HiPerFET power MOSFET | Original | 33.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR140N20P | IXYS | PolarHT HiPerFET Power MOSFET ISOPLUS247 | Original | 136.6KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR140N30P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR14N100Q2 | IXYS | Discrete MOSFETs: HiPerFET Power MOSFETS | Original | 580.42KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR150N15 | IXYS | 150V HiPerFET power MOSFET | Original | 34.43KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR15N100Q3 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A ISOPLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR15N80Q | IXYS | 800V HiPerFET power MOSFET | Original | 32.9KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR16N120P | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N06 | IXYS | 180V HiPerFET power MOSFET | Original | 83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N07 | IXYS | 100V HiPerFET power MOSFET | Original | 33KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N07 | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 70V 180A ISOPLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N085 | IXYS | 85V HiPerFET power MOSFET | Original | 34.35KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N10 | IXYS | 100V HiPerFET power MOSFET | Original | 32.97KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFR Price and Stock
IXYS Corporation IXFR48N60PTrans MOSFET N-CH Si 600V 32A 3-Pin(3+Tab) ISOPLUS 247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFR48N60P | 295 | 4 |
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Buy Now | ||||||
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IXFR48N60P | Bulk | 1 |
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IXFR48N60P | 16 | 1 |
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IXFR48N60P | 295 | 1 |
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Littelfuse Inc IXFR32N100Q3Trans MOSFET N-CH Si 1KV 23A 3-Pin(3+Tab) ISOPLUS 247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFR32N100Q3 | 50 | 50 |
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Buy Now | ||||||
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IXFR32N100Q3 | Bulk | 300 |
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Buy Now | ||||||
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IXFR32N100Q3 | Bulk | 8 Weeks | 30 |
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Get Quote | |||||
IXYS Corporation IXFR44N50QTrans MOSFET N-CH Si 500V 34A 3-Pin(3+Tab) ISOPLUS 247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFR44N50Q | 39 | 3 |
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Buy Now | ||||||
IXYS Corporation IXFR20N80PTrans MOSFET N-CH Si 800V 11A 3-Pin(3+Tab) ISOPLUS 247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFR20N80P | 30 | 6 |
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IXFR20N80P | 30 | 1 |
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Buy Now | ||||||
IXYS Corporation IXFR20N120PTrans MOSFET N-CH Si 1.2KV 13A 3-Pin(3+Tab) ISOPLUS 247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFR20N120P | 30 | 2 |
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Buy Now | ||||||
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IXFR20N120P | 20 |
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Get Quote | |||||||
IXFR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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24N50
Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
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26n50isoplus247tm24n50247tm+3 | |
50n50
Abstract: 55N50 150N50 IXFK55N50
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isoplus247tm50n5055n50247tm+2 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet |
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58n20qisoplus247tm728b1 | |
150N15Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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isoplus247tm150n15 | |
70N15Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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70n15isoplus247tm250ns | |
ISOPLUS247Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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102n30pisoplus247 | |
4525G
Abstract: ISOPLUS247
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120n25p4525gisoplus247 | |
34N80
Abstract: 34N8
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isoplus247tm34n80247tme153432+1 | |
IXFR140N30Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |
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140n30pisoplus247tm405b2ixfr140n30 | |
44N50Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions |
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isoplus247tm44n50p405b244n50 | |
IXFR32N50Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family |
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isoplus247tm30n50q32n50q30n50+3 | |
IXFR32N50Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family |
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isoplus247tm30n50q32n50q30n50+3 | |
44N50P
Abstract: ISOPLUS247
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44n50pisoplus247tm03-21-06-bisoplus247 | |
10N100Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt |
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12n100qisoplus247tm10n100q12n100+4 | |
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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ixfr30n110p300nsisoplus247e153432+1 | |
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Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt |
OCR Scan |
isoplus24712n100q10n100q12n100+2 | |
30N50
Abstract: IXFR32N50
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isoplus247tm32n5030n50ixfr32n50 | |
80N60Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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ixfr80n60p3250nsisoplus247e153432+2 | |
I 508 VContextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol |
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isoplus247tm36n50pi 508 v | |
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Contextual Info: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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isoplus247tm150n15247tm | |
40N50Q2Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR40N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings |
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ixfr40n50q2250nsisoplus247e153432+2 | |
40n50
Abstract: ISOPLUS247 IXFR40N50Q2 40N50Q2
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ixfr40n50q2250nsisoplus247e153432+3 | |
64N50P
Abstract: ISOPLUS247 IXFR64N50P 64N50 50NC50
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ixfr64n50p200nsisoplus247e153432+3 | |
IXFR140N30
Abstract: IXFR140N30P ISOPLUS247 1M300
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ixfr140n30p200nsisoplus247e153432+4 | |