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    IXFR Search Results

    IXFR Datasheets (96)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFR100N25
    IXYS 250V HiPerFET power MOSFET Original PDF 81.64KB 2
    IXFR102N30P
    IXYS PolarHT HiPerFET Power MOSFET Original PDF 87.41KB 5
    IXFR10N100F
    IXYS N-channel Power MOSFETs Original PDF 91.67KB 2
    IXFR10N100Q
    IXYS 1000V HiPerFET power MOSFET Original PDF 33.41KB 2
    IXFR120N20
    IXYS 200V HiPerFET power MOSFET Original PDF 34.27KB 2
    IXFR120N25P
    IXYS PolarHT HiPerFET Power MOSFET Original PDF 88.11KB 5
    IXFR12N100F
    IXYS N-channel Power MOSFETs Original PDF 91.67KB 2
    IXFR12N100Q
    IXYS 1000V HiPerFET power MOSFET Original PDF 33.41KB 2
    IXFR140N20P
    IXYS PolarHT HiPerFET Power MOSFET ISOPLUS247 Original PDF 136.6KB 5
    IXFR140N30P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247 Original PDF 5
    IXFR14N100Q2
    IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF 580.42KB 4
    IXFR150N15
    IXYS 150V HiPerFET power MOSFET Original PDF 34.43KB 2
    IXFR15N100Q3
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A ISOPLUS247 Original PDF 5
    IXFR15N80Q
    IXYS 800V HiPerFET power MOSFET Original PDF 32.9KB 2
    IXFR16N120P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247 Original PDF 5
    IXFR180N06
    IXYS 180V HiPerFET power MOSFET Original PDF 83KB 2
    IXFR180N07
    IXYS 100V HiPerFET power MOSFET Original PDF 33KB 2
    IXFR180N07
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 70V 180A ISOPLUS247 Original PDF 5
    IXFR180N085
    IXYS 85V HiPerFET power MOSFET Original PDF 34.35KB 2
    IXFR180N10
    IXYS 100V HiPerFET power MOSFET Original PDF 32.97KB 2
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    IXFR Price and Stock

    IXYS Corporation

    IXYS Corporation IXFR140N20P

    MOSFET N-CH 200V 90A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR140N20P Tube 4,147 1
    • 1 $17.51
    • 10 $17.51
    • 100 $13.81
    • 1000 $13.81
    • 10000 $13.81
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    Mouser Electronics IXFR140N20P 140
    • 1 $17.17
    • 10 $14.10
    • 100 $14.10
    • 1000 $14.09
    • 10000 $14.09
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    Newark IXFR140N20P Bulk 1 1
    • 1 $17.17
    • 10 $16.14
    • 100 $14.09
    • 1000 $14.09
    • 10000 $14.09
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    New Advantage Corporation IXFR140N20P 24 1
    • 1 -
    • 10 -
    • 100 $31.53
    • 1000 $31.53
    • 10000 $31.53
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    IXYS Corporation IXFR24N100Q3

    MOSFET N-CH 1000V 18A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR24N100Q3 Tube 367 1
    • 1 $31.52
    • 10 $31.52
    • 100 $20.62
    • 1000 $20.10
    • 10000 $20.10
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    New Advantage Corporation IXFR24N100Q3 450 1
    • 1 -
    • 10 -
    • 100 $39.45
    • 1000 $36.42
    • 10000 $36.42
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    IXYS Corporation IXFR200N10P

    MOSFET N-CH 100V 133A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR200N10P Tube 306 1
    • 1 $19.25
    • 10 $19.25
    • 100 $12.05
    • 1000 $10.76
    • 10000 $10.76
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    TTI IXFR200N10P Tube 300
    • 1 -
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    • 100 -
    • 1000 $10.50
    • 10000 $10.50
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    IXYS Corporation IXFR32N80Q3

    MOSFET N-CH 800V 24A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR32N80Q3 Tube 300 1
    • 1 $24.13
    • 10 $24.13
    • 100 $22.72
    • 1000 $22.48
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    Mouser Electronics IXFR32N80Q3 300
    • 1 $23.66
    • 10 $22.73
    • 100 $22.73
    • 1000 $22.48
    • 10000 $22.48
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    TME IXFR32N80Q3 1
    • 1 $42.55
    • 10 $33.81
    • 100 $30.43
    • 1000 $30.43
    • 10000 $30.43
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    IXYS Corporation IXFR64N60P

    MOSFET N-CH 600V 36A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR64N60P Tube 294 1
    • 1 $20.54
    • 10 $20.54
    • 100 $12.93
    • 1000 $11.69
    • 10000 $11.69
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    Mouser Electronics IXFR64N60P
    • 1 $20.52
    • 10 $12.94
    • 100 $12.94
    • 1000 $11.68
    • 10000 $11.68
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    IXFR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50 PDF

    50n50

    Abstract: 55N50 150N50 IXFK55N50
    Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR


    Original
    ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet


    Original
    58N20Q ISOPLUS247TM 728B1 PDF

    150N15

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    ISOPLUS247TM 150N15 PDF

    70N15

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    70N15 ISOPLUS247TM 250ns 70N15 PDF

    ISOPLUS247

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    102N30P ISOPLUS247 PDF

    4525G

    Abstract: ISOPLUS247
    Contextual Info: PolarHTTM HiPerFET IXFR 120N25P Power MOSFET VDSS = 250 V ID25 = 61 A Ω RDS on = 27 mΩ Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    120N25P 4525G ISOPLUS247 PDF

    34N80

    Abstract: 34N8
    Contextual Info: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ


    Original
    ISOPLUS247TM 34N80 247TM E153432 34N8 PDF

    IXFR140N30

    Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode


    Original
    140N30P ISOPLUS247TM 405B2 IXFR140N30 PDF

    44N50

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions


    Original
    ISOPLUS247TM 44N50P 405B2 44N50 PDF

    IXFR32N50

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50 PDF

    IXFR32N50

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50 PDF

    44N50P

    Abstract: ISOPLUS247
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original
    44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247 PDF

    10N100

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original
    12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    IXFR30N110P 300ns ISOPLUS247 E153432 30N110P PDF

    Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


    OCR Scan
    ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100 PDF

    30N50

    Abstract: IXFR32N50
    Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions


    Original
    ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50 PDF

    80N60

    Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60 PDF

    I 508 V

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original
    ISOPLUS247TM 36N50P I 508 V PDF

    Contextual Info: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    ISOPLUS247TM 150N15 247TM PDF

    40N50Q2

    Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR40N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


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    IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40N50Q2 PDF

    40n50

    Abstract: ISOPLUS247 IXFR40N50Q2 40N50Q2
    Contextual Info: HiPerFETTM Power MOSFET Q2-Class IXFR40N50Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


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    IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40n50 ISOPLUS247 IXFR40N50Q2 40N50Q2 PDF

    64N50P

    Abstract: ISOPLUS247 IXFR64N50P 64N50 50NC50
    Contextual Info: IXFR64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 37A Ω 95mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFR64N50P 200ns ISOPLUS247 E153432 64N50P ISOPLUS247 IXFR64N50P 64N50 50NC50 PDF

    IXFR140N30

    Abstract: IXFR140N30P ISOPLUS247 1M300
    Contextual Info: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B IXFR140N30 IXFR140N30P ISOPLUS247 1M300 PDF