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    Littelfuse Inc IXFX64N50P

    Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247
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    Master Electronics IXFX64N50P
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    • 1000 $11.76
    • 10000 $11.73
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    Newark IXFX64N50P Bulk 250 1
    • 1 $24.93
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    RS IXFX64N50P Bulk 8 Weeks 30
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    IXYS Corporation IXFK64N50P

    Mosfet, N, To-264; |Ixys Semiconductor IXFK64N50P
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    Newark IXFK64N50P Bulk 1,291 1
    • 1 $21.82
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    TTI IXFK64N50P Tube 300
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    TME IXFK64N50P 1
    • 1 $17.30
    • 10 $12.53
    • 100 $11.41
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    Littelfuse Inc IXFN64N50P

    Mosfet Module, N-Ch, 500V, 64A; |Littelfuse IXFN64N50P
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    Newark IXFN64N50P Bulk 5 1
    • 1 $45.57
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    RS IXFN64N50P Bulk 8 Weeks 10
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    Littelfuse Inc IXFR64N50P

    Discmosfetn-Ch Hiperfet-Polar Isoplus247; |Littelfuse IXFR64N50P
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    Newark IXFR64N50P Bulk 300
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    RS IXFR64N50P Bulk 8 Weeks 30
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    Flip Electronics IXFR64N50P 300
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    Littelfuse Inc IXFK64N50P

    DiscMosfetN-CH HiPerFET-Polar TO-264(3)
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    RS IXFK64N50P Bulk 8 Weeks 25
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    64N50P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sot 227b diode fast

    Abstract: SOT227B 64N50 64N50P IXFN64N50P sot 227b
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 64 A ≤ 85 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		64n50p405b2sot 227b diode fastsot227b+364n50ixfn64n50psot 227b PDF

    64N50

    Abstract: fd 715 64N50P ISOPLUS247
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 43 A ≤ 100 mΩ Ω ≤ 200 ns (Electrically Isolated Back Surface) Symbol


    Original     		64n50pisoplus247tm64n50fd 715+1isoplus247 PDF

    64N50P

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode = = ≤ ≤ 500 V 64 A Ω 85 mΩ 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		64n50pot-227e153432 PDF

    diode m4

    Abstract: 64N50 uc pfc NS2004
    Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 64N50PD2 VDSS ID25 RDS on Boost Configuration for PFC Circuits trr 3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 52 A ≤ 85 m Ω ≤ 200 ns 4 2 1 Symbol


    Original     		64n50pd2405b2diode m464n50+2uc pfcns2004 PDF

    64N50

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXTK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		64n50po-264plus247405b2+164n50 PDF

    64N50P

    Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		64n50p64n50plus247ixfk64n50p+1ixfx64n50p PDF

    64N50

    Abstract: 64n50p IXFX64N50P PLUS247
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXFK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		64n50po-26464n50ixfx64n50p+1plus247 PDF

    64N50

    Abstract: 64N50P ISOPLUS247
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 500 V = 35 A ≤ 95 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		64n50pisoplus247tm64n50isoplus247 PDF

    "SOT-227 B" dimensions

    Abstract: SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = 500 V ID25 = 61 A RDS on ≤ 85 m Ω ≤ 200 ns trr IXFN 64N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		64n50pot-227e153432sot-227 b" dimensions+6sot-227 package64n50be 64ahiperfetsot-227b outlineixfn64n50p PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		ixfr48n60p18n60p30n60p22n60p+1536n60p26n60p48n60pplus220ixtv22n50ps2n60pgsm based speed control of single phase induction motorthyristor family48n60600v 20 amp mosfet14n60300v hiperfet power mosfet single die mosfetwireless a.c motor speed controlling systemixys scr module gate drive15n60p PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF