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    140N30P Search Results

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    140N30P Price and Stock

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    IXYS Corporation IXFK140N30P

    Mosfet, N, To-264; |Ixys Semiconductor IXFK140N30P
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    Newark () IXFK140N30P Bulk 270 1
    • 1 $29.29
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    IXFK140N30P Bulk 300
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    TME IXFK140N30P 56 1
    • 1 $26.84
    • 10 $18.39
    • 100 $16.04
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    IXYS Corporation IXFR140N30P

    Mosfet, N, Isoplus247; |Ixys Semiconductor IXFR140N30P
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    TME IXFR140N30P 1
    • 1 $25.37
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    • 100 $18.52
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    Littelfuse Inc IXFN140N30P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini; |Littelfuse IXFN140N30P
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    Littelfuse Inc IXFX140N30P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/; |Littelfuse IXFX140N30P
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    Littelfuse Inc IXTK140N30P

    Disc Mosfet N-Ch Std-Polar To-264(3)/ Tu; |Littelfuse IXTK140N30P
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    Newark () IXTK140N30P Bulk 300
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    IXTK140N30P Bulk 1
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    RS IXTK140N30P Bulk 8 Weeks 25
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    140N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFR140N30

    Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode


    Original
    140n30pisoplus247tm405b2ixfr140n30 PDF

    Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 70 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original
    140n30pisoplus247tmixfr140n30p PDF

    ixfn 140n30p

    Contextual Info: PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original
    140n30pot-227e153432ixfn140n30p+1ixfn 140n30p PDF

    ixfn 140n30p

    Abstract: sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16
    Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    140n30p405b2ixfn 140n30psot 227b diode fast+4ul 486 torque values710 115ixfn140n30p123b16 PDF

    4525G

    Abstract: 140N30P
    Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSM VGSM Transient


    Original
    140n30po-264plus2474525g PDF

    140n30p

    Abstract: PLUS247 TO-264 weight IXfk 75 N 50
    Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSM VGSM


    Original
    140n30pplus247to-264 weightixfk 75 n 50 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF