IRFM11 Search Results
IRFM11 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFM110 | Samsung Electronics | N-Channel Power MOSFETS | Scan | 133.01KB | 3 | ||
| IRFM110A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 267.57KB | 7 | ||
| IRFM110A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFM110A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.64KB | 6 | ||
| IRFM110ATF | Fairchild Semiconductor | 100V N-Channel A-FET / Substitute of IRFM110 | Original | 267.57KB | 7 |
IRFM11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Î2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V |
OCR Scan |
irfm110a | |
|
Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V |
OCR Scan |
irfm110ad03h3e3 | |
IRFM110Contextual Info: N-CHANNEL POWER MOSFETS IRFM110 FEATURES • Lower R ds< on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability |
OCR Scan |
irfm11000a/justo150300/js | |
|
Contextual Info: IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V |
Original |
irfm110aot-223 | |
IRFM110AContextual Info: IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V |
Original |
irfm110aot-223 | |
irfm014
Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995
|
OCR Scan |
ot-223irfm014irfm110irfwz10+12 | |
EZ-34
Abstract: IRFM120A U2N60
|
OCR Scan |
irfw/iz14airfw/iz24airfw/ez34airfw/iz44a+9 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
|
OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
|
Original |
thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
|
Original |
sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
|
Original |
uf4003uf4004uf4005uf4006+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
|
Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
|
Original |
ao4405ao4407ao4408ao4409+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2n70002n70022sj3772sj378+16 | |
|
|
|||
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
|
Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
MC0628R
Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
|
Original |
st42091f50188enb5f00974abt646cmsa+16 | |
MC0628R
Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
|
Original |
scyb017at74alvc3237474cbtlv16211sn74cbtd16211+14 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
|
OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
|
Original |
ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
NDT453N
Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
|
Original |
ot-223ndt453nfdt439nndt451an+10 | |
IRFM110AContextual Info: IRFM 110A Advanced Power M O SFET FEATURES B • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance l D Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :1 0 H A M a x . @ V DS = 100V |
OCR Scan |
irfm110airfm11 | |