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    onsemi FQU2N60CTU

    Power MOSFET, N-Channel, QFET?, 600 V, 1.9 A, 4.7 ?, IPAK - Rail/Tube (Alt: FQU2N60CTU)
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    Avnet Americas FQU2N60CTU Tube 5,040
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    Rochester Electronics FQU2N60CTU 9 1
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    Flip Electronics FQU2N60CTU 307,440
    • 1 $0.24
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    Fairchild Semiconductor Corporation FQU2N60TU

    MOSFET N-Channel 600V 2A (Tc) IPAK Tube
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    Rochester Electronics FQU2N60TU 10,164 1
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    Alpha & Omega Semiconductor AOU2N60

    Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251
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    TME AOU2N60 3,046 3
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    Samsung Semiconductor SSU2N60TU

    N-CHANNEL MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SSU2N60TU 10,010
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    U2N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSR -100 DD

    Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		ssr/u2n60ab41120g40471ssr -100 dd+2600v 2a mosfet n-channelu2n60 PDF

    U2N60

    Abstract: *c1251c
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■


    OCR Scan     		ssr/u2n60au2n60c1251c PDF

    U2N60

    Contextual Info: WFD/U2N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		wfd/u2n6030typu2n60 PDF

    U2N60

    Abstract: 30V 20A power p MOSFET
    Contextual Info: SFD/U2N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		sfd/u2n6030typu2n6030v 20a power p mosfet PDF

    MOSFET SSR

    Abstract: U2N60
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max @ Lower R ^o *, : 3.892 Q (Typ.)


    OCR Scan     		ssr/u2n60a--p300nfmosfet ssru2n60 PDF

    U2N60

    Contextual Info: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V


    OCR Scan     		ssr/u2n60a\61tageu2n60 PDF

    U2N60

    Contextual Info: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 |a.A (M ax.) @ V DS = 600V


    OCR Scan     		ssr/u2n60au2n60 PDF

    U2N60

    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		ssr/u2n60au2n60 PDF

    D2N60

    Abstract: U2N60
    Contextual Info: PJD2N60 / U2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		pjd2n60pju2n602002/95/eco-252+4o-251mil-std-750d2n60u2n60 PDF

    EZ-34

    Abstract: IRFM120A U2N60
    Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A


    OCR Scan     		irfw/iz14airfw/iz24airfw/ez34airfw/iz44a+9irfw/i510aerfw/i520airfw/i530afrfw/i540airfwfl550airfw/i610aez-34irfm120au2n60 PDF

    U2N60

    Abstract: SSU2N60 SSU2N55 SSR2N60 250M SSR2N55
    Contextual Info: SSR2N60/55 U2N60/55 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower R ds ON Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		ssr2n60/55ssu2n60/55ssr2n60/u2n60ssr2n55/u2n55+6ssr2n60ssu2n60ssr2n55ssu2n55u2n60250m PDF