D03H3E3 Search Results

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Í2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V

OA 182 diode

Contextual Info: IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1.13 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V

Contextual Info: IRFM214A A dvanced Power MOSEET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ID = 0 . 6 4 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

IRFM014A

Contextual Info: IRFM014A A dvanced Power MOSEET FEATURES B V DSS - 60 V 0 .1 4 ß • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = 2 . 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage

Contextual Info: IRFM120A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0 .1 5 5 &(Typ.)

Contextual Info: IRFM224A A dvanced Power MOSEET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 0 . 9 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

33a sot23 diode

Contextual Info: IRFM210A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ VDS = 200V