FIG15 Search Results

ISFET

Abstract: IC 74LS74 datasheet 74ls74 pin configuration ISFET pH isfet ph SENSOR 74xx123 74LS74 74LS123 circuit ideas 74LS123 datasheet 74LS123 application circuits
Contextual Info: design ideas Edited by Bill Travis Supply delivers pin-programmable multiple references V Manoharan, Kochi, India obtain precisely Ϫ5V at n the circuit of Fig15V VOUT2, you must ratioure 1, the REF01, IC1, is 2 VOUT 6 VIN VOUT1 a buried-zener-diodematch R1 and R2 and also

Contextual Info: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

CM105B104K25A

Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

MUN2216

Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

MAX19515

Contextual Info: 19-4312; Rev 1; 9/10 KIT ATION EVALU LE B A IL A AV Dual-Channel, 8-Bit, 100Msps ADC The MAX19506 dual-channel, analog-to-digital converter ADC provides 8-bit resolution and a maximum sample rate of 100Msps. The MAX19506 analog input accepts a wide 0.4V to

KS0075

Abstract: 0B 2262 8 x 8 DOT MATRIX DISPLAY white 8 x 8 DOT MATRIX DISPLAY S6A0075 samsung LCD controller KS0075
Contextual Info: S6A0075 100 SEG / 34 COM DRIVER & CONTROLLER FOR DOT MATRIX LCD June. 2000. Ver. 0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express

FS-1133

Contextual Info: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V

D 92 M - 02 DIODE

Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

kf80n08

Abstract: KF80N08P kf80n08f 701p2
Contextual Info: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

D 92 M - 02 DIODE

Abstract: KF70N06
Contextual Info: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

047N08P

Abstract: 047N08
Contextual Info: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

5 terminal ba7810

Abstract: ba7810 5 pin ba7810 MARKING BA7810 TO220cp-3
Contextual Info: 78 Series Regulators 1A Output 78 series Regulators 500mA Output 78 series Regulators BA78□□Series,BA78M□□Series No.12019ECT01 ●Description BA78□□, BA78M□□ series are three-terminal regulators available with several fixed output voltages. It supplies the

KHB8D8N25F

Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Contextual Info: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

KHB7D0N65F1

Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
Contextual Info: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

on line ups circuit diagrams

Abstract: M30260F8AGP c21214
Contextual Info: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units

AIC1384

Abstract: AIC1384PS c96o AIC1384PSTR MS-012AA northbridge 1384p03
Contextual Info: AIC1384 DDR Termination Regulator DESCRIPTION FEATURES The AIC1384 linear regulator is designed to deliver 1.5A continuous current and up to 3A peak transient currents for termination of DDRSRAM. The AIC1384 contains a high-speed operational amplifier to supply superior load

MUN2211

Abstract: MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 2 1 SC-59 WEITRON http://www.weitron.com.tw MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

Contextual Info: 34COM/100SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD S6A0075 INTRODUCTION S6A0075 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. It can display 1, 2, or 4 lines with 5 x 8 or 6 x 8 dots format. FUNCTIONS • Character type dot matrix LCD driver & controller

CA3005

Abstract: CA3005 or CA3006 CA3006 CA3004 S-I352B CA3006/3
Contextual Info: Differential A m p lifie rs _ CA3005, CA3006 RF Amplifiers A p p lica tio n s: Features: • D esigned fo r use in c o m m u n ic a ­ ■ P u sh -p u ll in p u t and o u tp u t tio n s eq uipm e nt a B alance d d iffe re n tia l a m p lifie r c o n ­