FIG17 Search Results

Contextual Info: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX2 Series ●General The PWM type DC/DC converter BM2PXX2 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX2 supports both isolated and non-isolated

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

CM105B104K25A

Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

MUN2216

Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

NTC thermistor 10k ohm

Abstract: IR3086A IR3088A IR3510 IRF6631 IRF6635 MLPQ-32
Contextual Info: IR3510 DATA SHEET HOT-SWAP N+1 REDUNDANT XPHASE CONTROL IC DESCRIPTION The IR3510 Hot-Swap N+1 Redundant X-Phase Controller combines input isolation control for hotswappable application, X-Phase VRM/VRD control and output OR-ing control for N+1 redundant application. It interfaces with microcontroller and X-Phase phase ICs to provide a full featured and

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

FS-1133

Contextual Info: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V

kf80n08

Abstract: KF80N08P kf80n08f 701p2
Contextual Info: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

D 92 M - 02 DIODE

Abstract: KF70N06
Contextual Info: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

kf12n60

Abstract: kf12n60f kf12n60 equivalent KF12N60P *2n60P
Contextual Info: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

KHB8D8N25F

Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Contextual Info: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

on line ups circuit diagrams

Abstract: M30260F8AGP c21214
Contextual Info: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units

MUN2211

Abstract: MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 2 1 SC-59 WEITRON http://www.weitron.com.tw MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

Contextual Info: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification

quartz 12 MHz

Contextual Info: THE NEW VALUE FRONTIER No. C0502-05005-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units

KF9N25

Abstract: TO-220IS
Contextual Info: SEMICONDUCTOR KF9N25P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

KF7N60

Abstract: kf7n60f KF7N60P
Contextual Info: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

8K2 capacitor

Abstract: triple operational amplifier so14 N1 MARKING CODE SOT23 n1 sot23 resistor 8k2 ohm TSH330IDT TSH330 TSH330I TSH330ID marking code C9* sot23-5
Contextual Info: TSH330 1.1 GHz Low-Noise Operational Amplifier • ■ ■ ■ ■ ■ ■ Bandwidth: 1.1GHz Gain=+2 Quiescent current: 16.6 mA Slew rate: 1800V/µs Input noise: 1.3nV/√Hz Distortion: SFDR = -78dBc (10MHz, 2Vp-p) Output stage optimized for driving 100Ω

KF3N60

Contextual Info: SEMICONDUCTOR KF3N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and