tas5717l
Contextual Info: User's Guide SLOU331 – December 2011 TAS5731EVM Evaluation Module This manual describes the operation of the TAS5731EVM to evaluate the performance of the TAS5731 integrated digital audio power amplifier. The main contents of this document are: • Details on how to properly connect a TAS5731 Evaluation Module EVM and the details of the EVM.
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TK10203AM9
Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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tk10203am9gc3-l017atk10203am9/1hson3030c-10+3600mwcm105b105k16k200ma
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CM105B104K25A
Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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MUN2216
Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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KHB7D5N60F1
Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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khb7d5n60p1/f1/f2khb7d0n60p1fig15fig16+8fig17khb7d5n60f1khb7d5n60fkhb7d5n60p1khb7d5n60f2tjc3d 92 m - 02 diodevdd-300v
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KHB5D0N50F
Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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MAX19515
Contextual Info: 19-4312; Rev 1; 9/10 KIT ATION EVALU LE B A IL A AV Dual-Channel, 8-Bit, 100Msps ADC The MAX19506 dual-channel, analog-to-digital converter ADC provides 8-bit resolution and a maximum sample rate of 100Msps. The MAX19506 analog input accepts a wide 0.4V to
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FS-1133
Contextual Info: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V
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kf80n08
Abstract: KF80N08P kf80n08f 701p2
Contextual Info: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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D 92 M - 02 DIODE
Abstract: KF70N06
Contextual Info: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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kf12n60
Abstract: kf12n60f kf12n60 equivalent KF12N60P *2n60P
Contextual Info: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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047N08P
Abstract: 047N08
Contextual Info: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
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KHB8D8N25F
Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Contextual Info: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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khb*2D0N60P
Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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on line ups circuit diagrams
Abstract: M30260F8AGP c21214
Contextual Info: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units
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AIC1384
Abstract: AIC1384PS c96o AIC1384PSTR MS-012AA northbridge 1384p03
Contextual Info: AIC1384 DDR Termination Regulator DESCRIPTION FEATURES The AIC1384 linear regulator is designed to deliver 1.5A continuous current and up to 3A peak transient currents for termination of DDRSRAM. The AIC1384 contains a high-speed operational amplifier to supply superior load
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MUN2211
Abstract: MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 2 1 SC-59 WEITRON http://www.weitron.com.tw MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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quartz 12 MHz
Contextual Info: THE NEW VALUE FRONTIER No. C0502-05005-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units
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KF9N25
Abstract: TO-220IS
Contextual Info: SEMICONDUCTOR KF9N25P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KF7N60
Abstract: kf7n60f KF7N60P
Contextual Info: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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TK10203AM9
Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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AOT502
Abstract: gate-drain zener 50E05 102-AX
Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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KF3N60
Contextual Info: SEMICONDUCTOR KF3N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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