KHB019N20F2 Search Results

019n20

Abstract: KHB019N20F2 2009 019N20f week01
Contextual Info: SEMICONDUCTOR KHB019N20F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 019N20F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB019N20F2 KHB019N20F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KHB019N20F2

Abstract: KHB019N20F1 KHB019N20P
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters