FQT13N06 Search Results
FQT13N06 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FQT13N06 |
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60 V N-Channel MOSFET | Original | 703.34KB | 8 | ||
| FQT13N06 |
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60V N-Channel MOSFET | Original | 702.76KB | 8 | ||
| FQT13N06L |
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60 V Logic N-Channel MOSFET | Original | 690.44KB | 8 | ||
| FQT13N06LTF |
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60V N-Channel Logic level QFET | Original | 690.45KB | 8 | ||
| FQT13N06TF |
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60V N-Channel QFET | Original | 703.34KB | 8 |
FQT13N06 Price and Stock
onsemi FQT13N06TFMOSFET N-CH 60V 2.8A SOT223-4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQT13N06TF | Reel |
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FQT13N06TF | 1 |
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FQT13N06TF | 4,000 |
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onsemi FQT13N06LTFMOSFET N-CH 60V 2.8A SOT223-4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQT13N06LTF | Reel | 4,000 |
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FQT13N06LTF | Bulk | 2 Weeks | 5 |
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FQT13N06LTF | 1 |
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FQT13N06LTF | 4,000 |
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Fairchild Semiconductor Corporation FQT13N06TFPOWER FIELD-EFFECT TRANSISTOR, 2.8A I(D), 60V, 0.14OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQT13N06TF | 17 |
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Fairchild Semiconductor Corporation FQT13N06LTFElectronic Component |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQT13N06LTF | 5,930 |
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FQT13N06LTF | 732 |
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FQT13N06LTF | 7,800 |
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onsemi FQT13N06LFTN-CHANNEL QFET MOSFET Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQT13N06LFT | 1,255 |
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FQT13N06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QFET TM FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06L | |
FQT13N06Contextual Info: FQT13N06 N-Channel QFET MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially |
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FQT13N06 FQT13N06 | |
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Contextual Info: QFET TM FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06 | |
FQT13N06Contextual Info: QFET TM FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06 FQT13N06 | |
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Contextual Info: QFET TM FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06L FQT13N06L FQT13N06LTF OT-223 OT-223-3 | |
FQT13N06Contextual Info: FQT13N06 November 2000 QFET TM FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06 FQT13N06 | |
FQT13N06LContextual Info: QFET TM FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06L FQT13N06L | |
FQT13N06Contextual Info: QFET TM FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06 FQT13N06 | |
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Contextual Info: QFET TM FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQT13N06 FQT13N06TF OT-223 FQT13N06 | |
FQT13N06LContextual Info: FQT13N06L N-Channel QFET MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially |
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FQT13N06L FQT13N06L | |
Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
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Contextual Info: ISL97634 Data Sheet March 7, 2008 White LED Driver with Wide PWM Dimming Range Features • Drives Up to 7 LEDs in Series 3.5V/20mA type The ISL97634 represents an efficient and highly integrated PWM boost LED driver that is suitable for 1.8” to 3.5” LCDs |
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ISL97634 V/20mA ISL97634 32kHz FN6264 | |
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Contextual Info: White LED Driver with Wide PWM Dimming Range ISL97634 Features The ISL97634 represents an efficient and highly integrated PWM boost LED driver that is suitable for LED backlighting in small size LCD panels. With integrated Schottky diode, OVP, and wide range of PWM dimming capability, the ISL97634 |
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ISL97634 ISL97634 32kHz 5m-1994. FN6264 | |
FDC6331
Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
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2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 | |
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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ISL97632
Abstract: ISL97632IRT14Z-T ISL97632IRT14Z-TK ISL97632IRT18Z-T ISL97632IRT18Z-TK ISL97632IRT26Z-T ISL97632IRT26Z-TK
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ISL97632 FN9239 ISL97632 ISL97632IRT14Z-T ISL97632IRT14Z-TK ISL97632IRT18Z-T ISL97632IRT18Z-TK ISL97632IRT26Z-T ISL97632IRT26Z-TK | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 | |
4 terminal off line pwm switch
Abstract: ISL97634 ISL97634IRT14Z-T ISL97634IRT14Z-TK ISL97634IRT18Z-T ISL97634IRT18Z-TK ISL97634IRT26Z-T ISL97634IRT26Z-TK TB347 2x3 zener diode
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ISL97634 V/20mA ISL97634 32kHz FN6264 4 terminal off line pwm switch ISL97634IRT14Z-T ISL97634IRT14Z-TK ISL97634IRT18Z-T ISL97634IRT18Z-TK ISL97634IRT26Z-T ISL97634IRT26Z-TK TB347 2x3 zener diode | |
diode d1n4148Contextual Info: ISL97634 Data Sheet November 22, 2006 White LED Driver with PWM Dimming Features The ISL97634 represents an efficient and highly integrated PWM boost LED driver that is suitable for 1.8” to 3.5” LCDs that employ 2 to 6 white LEDs for backlighting. With |
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ISL97634 FN6264 ISL97634 20kHz diode d1n4148 | |
BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
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OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 | |