IRFF9024 Search Results
IRFF9024 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFF9024 | International Rectifier | HEXFET Power Mosfet | Original | 137.71KB | 7 | ||
| IRFF9024 | Semelab | P-Channel MOSFET in a Hermetically Sealed TO39 Metal Package | Original | 12.15KB | 1 |
IRFF9024 Price and Stock
New Jersey Semiconductor IRFF9024Trans MOSFET P-CH 60V 6.4A 3-Pin TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFF9024 | 350 | 1 |
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Buy Now | ||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFF9024 | 280 |
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Buy Now | |||||||
IRFF9024 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9024 -60V 0.28Ω ID -6.4A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. |
Original |
o-205afirff9024 | |
IRFF9024Contextual Info: PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9024 -60V 0.28Ω ID -6.4A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. |
Original |
o-205afirff9024 | |
JANTX2N6845Contextual Info: Government and Space International HEXFET Power MOSFETs lI O R B e c t if ie r Hermetic Package P-Channel Part Number BVpss V RDS(on) (Ohms) •d @ Tc = 25-C lD@ Tc = 100"C (A) (A) RthJC Max. (K/W) Pd@ TC= 25°C (W) IRFF9024 -60 0.28 -6.4 -4.1 6.25 20 IRFF9110 |
OCR Scan |
irff9024irff9110irff91202n6845+6 | |
IRFF9024Contextual Info: IRFF9024 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET. |
Original |
irff9024o205af11-oct-02 | |
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
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30am-544-0-1737-2comdb8029cirf460+9 | |
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Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical |
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2N6802 JANTXContextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical |
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i-2002n6802 jantx | |
2N7334
Abstract: irfg9110 H24 SMD
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irhe7110irhe8110irhe7130irhe8130+9 | |
IRF540
Abstract: T0-220
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irf452irf453irf460irf520+8 | |
2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
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Original |
2n75502n75492n75452n7476t1+6 | |
2N3907
Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
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Original |
2n2604-052n2907a-t462n3485-862n3508-09+16 | |
IRFF320Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel |
OCR Scan |
jantx2n7222ujantxv2n7222ujantx2n7228ujantxv2n7228u+7 |