IGBT 12N60C3D Search Results

IGBT 12N60C3D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT 12N60C3D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HGT1S12N60C3DR Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1 Contextual Info: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance	Original	HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 150oC 250ns HGT1S12N60C3DR HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT	Original	G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB	PDF
12n60c3d Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188 Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar	Original	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c3d TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188	PDF
TA49188 Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar	Original	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns TA49188 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182	PDF
Contextual Info: u a q q ic HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance	OCR Scan	HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS	PDF
12N60C3 Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12N60C3 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c	PDF
12N60CDR Abstract: 12n60c Contextual Info: HARRIS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features • Description This family of IGBTs was designed for optimum performance	OCR Scan	HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS 12N60CDR 12n60c	PDF
12n60c Abstract: 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60 Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60	PDF
12n60c Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c	PDF
12n60c3d Abstract: IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3 Contextual Info: HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Description • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices	Original	HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 1-800-4-HARRIS 12n60c3d IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3	PDF
HGT1S12N60C3DRS Abstract: 12N60CD Contextual Info: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance	Original	HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS HGT1S12N60C3DRS 12N60CD	PDF
12n60c3d Abstract: IGBT 12n60c3D Contextual Info: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis	OCR Scan	HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D	PDF
12n60c3 Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	OCR Scan	HGTP12N60C3D, HGT1S12N60C3DS TA49123. TA49188. TA4918ration 12n60c3 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D	PDF
2n60c3 Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent Contextual Info: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices	OCR Scan	HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent	PDF