IC AL 03 Search Results

Contextual Info: GM71C4270A/AL GM71CS4270A/AL GoldStar 262,144 WORDSX16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM 71C4270A/AL is the new generation dynam ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM 71C4270A/AL has realized higher density,

auo 014

Contextual Info: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,

4800AZ

Abstract: Lj70 GM71C4800
Contextual Info: GM71C4800A/AL GM71CS4800A/AL GoldStar 524,288 WORDS X8BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The G M 71C4800A/AL is the new generation d ynam ic RAM organized 5 2 4 ,2 8 8 x 8 B it. G M 71C4800A/AL has realized higher density,

GM7IC

Contextual Info: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density

gm71c4400az

Contextual Info: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­

A2H3

Abstract: transistor A5G TRC 561 a3 diagram 20-PIN 26-PIN ZIP20-P-400-W1 A2E3
Contextual Info: O K I Semiconductor MSM5 1 4 1 0 1 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The M SM 514101A/AL is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M SM 514101A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

MV-S100649-00

Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
Contextual Info: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL

514100A

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
Contextual Info: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

TA7630P

Abstract: bass treble volume control for 2 channel using IR
Contextual Info: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.

GM76C8128all

Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
Contextual Info: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS

GM1300

Contextual Info: CORPORATION GM1300 ISSUED DATE :2006/03/14 REVISED DATE : P NP S ILI CO N EP ITAX I AL T RANS I STOR Description The GM1300 is designed for medium power amplifier applications. Features hFE 1 =140~1000 (@VCE=-1V, IC=-0.5A) hFE(2)=60 (Min.) (@VCE=-1V, IC=-2A)

Contextual Info: G M 7 6 C 8 128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON C O , LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

Contextual Info: S P R A G U E / S E M I C O N DG R O U P 8514019 SPRAGUE. ^3 D • f l S 13f l S 0 0003^12 0 S E M IC O N D S/ IC S 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C Vgs oh V(BH)GSS Device

Contextual Info: SONY CXB1585N Fibre Channel Repeater Description The CXB1585N is a repeater IC with a built-in PLL clock recovery circuit for Fibre Channel 1.06Gbaud. This IC incorporates a port bypass circuit and is suitable for disk array and FC-AL HUB, etc. Features • Conforms to ANSI X3T11 Fibre Channel standard

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 1571625 , 1571625 RESERVED. C O R P O R A T IO N . D 6.8 + 0.3 A TE R M IN AL NO. CIRCUIT C TE R M IN AL NO.

29020

Contextual Info: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity

TP2905

Contextual Info: AL LE GR O M I C R O S Y S T E M S 8514019 INC SPRAGUE. =13 D • DSDM33Ô D Ü G S S T M 1 ■ ALGR S E M IC O N D S / IC S 93D 03594 D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

BCW71 AG

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 I NC SPRAGU E. TB » • 0SD433A G0D3bG5 SEM ICONDS / IC S 2 ■ ALGR 93D 03605J ' SMALL-OUTLINE BIPOLAR TRANSISTORS_ NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LEDI P ELA R ITY PIN 13 - ELEC TR IC AL C H A R A C T E R IS T IC S TURNS RATIO TP1

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

TA 8825

Abstract: st 88836 MB88505H b986 ic 8287 ta 8221 ta 8221 H TDK 8836 79785 85518
Contextual Info: IC dependence of oscillating character istiC 5 MB88505H FCR8.8MC5 - S Roam Temp. Udd CUD 5 item a"e MB88505H - 3 FCR8.0MC5 Ta= 20 Cdeg] o 7 a . U IH/U IL CU] b. U2H/U2L [U] 0 Tu p ic al «- » Unrst. 5 3 U2H JJ2I c, FD5c 5 ft- •= [/] !3 c -.3 - .5

2N4927

Abstract: 2N5415
Contextual Info: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib

cw53

Contextual Info: A COMPANY MODEL CW W irewound Resistors OF DALE C o a te d FEATURES • High performance for low cost • Complete welded construction • High-temperature silicone coating E L E C T R IC A L S P E C IF IC A T IO N S STANDARD ELECTRIC AL SPECIFICATIONS POWER RATING