IC AL 03 Search Results

Contextual Info: GM71C4270A/AL GM71CS4270A/AL GoldStar 262,144 WORDSX16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM 71C4270A/AL is the new generation dynam ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM 71C4270A/AL has realized higher density,

auo 014

Contextual Info: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,

4800AZ

Abstract: Lj70 GM71C4800
Contextual Info: GM71C4800A/AL GM71CS4800A/AL GoldStar 524,288 WORDS X8BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The G M 71C4800A/AL is the new generation d ynam ic RAM organized 5 2 4 ,2 8 8 x 8 B it. G M 71C4800A/AL has realized higher density,

tl 0741

Contextual Info: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing

Contextual Info: GM71V65163A GM71VS65163AL LG Semicon Co.,Ltd. ’ 4,196,304 W ORDS x 16 BIT CM OS DYNAM IC RAM Description Pin Configuration The GM 71V S 65163A/AL is the new generation dynam ic RAM organized 4,196,304 words by 16 bits. The G M 71V(S)65163A/AL utilizes advanced

gm71c4270a

Contextual Info: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing

GM7IC

Contextual Info: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density

Contextual Info: GM71V65403A GM71VS65403AL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT* CM OS DYNAM IC RAM Description Pin Configuration 32 S O J /T S O P I I The GM71 V S 65403A/AL is the new generation dynam ic RAM organized 16,777,216 w ords by 4bits. The G M 71V(S)65403A/AL utilizes advanced CM OS

gm71c4400az

Contextual Info: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­

Contextual Info: O K I Semiconductor MSM514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

A2H3

Abstract: transistor A5G TRC 561 a3 diagram 20-PIN 26-PIN ZIP20-P-400-W1 A2E3
Contextual Info: O K I Semiconductor MSM5 1 4 1 0 1 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The M SM 514101A/AL is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M SM 514101A/AL is OKI's CMOS silicon gate process technology.

mospower applications handbook

Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101

Contextual Info: ECN, ERN NO. DATE P R O P O S AL T H IS M EC H AN IC AL SPEC IFICATIO N S: C ENTRE C ENTRE N IC K E L CONTACT: PLATED C APACITANCE: BRASS DIELECTRIC PH O S P H O R B R O N ZE , 1 0 julN C H E S [ 0 . 2 5 M IC R O N S ] GOLD PLATED BR ASS, TIN 1 0 ,0 0 0 pF

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

514100A

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
Contextual Info: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

TA7630P

Abstract: bass treble volume control for 2 channel using IR
Contextual Info: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.

GM76C8128all

Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
Contextual Info: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS

GM1300

Contextual Info: CORPORATION GM1300 ISSUED DATE :2006/03/14 REVISED DATE : P NP S ILI CO N EP ITAX I AL T RANS I STOR Description The GM1300 is designed for medium power amplifier applications. Features hFE 1 =140~1000 (@VCE=-1V, IC=-0.5A) hFE(2)=60 (Min.) (@VCE=-1V, IC=-2A)

Contextual Info: G M 7 6 C 8 128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON C O , LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

Contextual Info: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

BCW71 AG

Contextual Info: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A

M514800A

Abstract: m514800
Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

HA21006MP

Contextual Info: HA21006MP BS Tuner Use GaAs IC Application G aA s m onolithic IC BS tuner Features • BS tuner IC include m ixer, R F A G C , IF AGC • O p eratio n al in all BS frequency 0.95 to 1.75 G H z • S urface m ount package Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: S P R A G U E / S E M I C O N DG R O U P 8514019 SPRAGUE. ^3 D • f l S 13f l S 0 0003^12 0 S E M IC O N D S/ IC S 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C Vgs oh V(BH)GSS Device