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    TSOPII32 Search Results

    TSOPII32 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TSOPII32-P-400-0.80C 32 Unit : mm 17


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    tsopii32-p-400-0 PDF

    Contextual Info: TSOPII32-P-400-1.27-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


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    tsopii32-p-400-1 PDF

    Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device


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    tc554001af/aft/atr-70vtc554001af/aft/atr304-bit+410ma/mhzop32-p-525-1775typ32-p-400-1 PDF

    MD51V64400

    Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1 TSOP-II-32
    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    md51v64400soj32-p-400-1md51v64400-50md51v64400-60+1tsop-ii-32 PDF

    A15C

    Abstract: TC554001
    Contextual Info: T O S H IB A TC554001AF/AFT/ATR-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device


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    tc554001af/aft/atr-70tc554001af/aft/atr304-bit+310ma/mhzop32-p-525-1a15c PDF

    A15C

    Abstract: TC554001 TSOP-II-32
    Contextual Info: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device


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    tc554001af/aft/atr-70vtc554001af/aft/atr304-bit+510ma/mhzop32-p-525-132-p-400-1a15ctsop-ii-32 PDF

    Contextual Info: f i f e L G S e m ï c o n C GM71V65803C GM71VS65803CL 8,388,608 WORDS x 8 BIT o ., L td . w w .,f c .iw . CMOS DYNAMIC RAM Description Pin Configuration The GM71V(S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS


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    gm71v65803cgm71vs65803clgm71v65803c/cl PDF

    Contextual Info: GM71V64403C GM71VS64403CL 16,777,216 w o r d s x 4 b i t f f l n LG S^micon uo.,Lia. Co Ltd LlÆ î^emicon CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS


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    gm71v64403cgm71vs64403clgm71v64403c/cl PDF

    SOJ32-P-400-1

    Contextual Info: E2G0140-18-11 ¡ Semiconductor MD51V65800 ¡ Semiconductor This version:MD51V65800 Mar. 1998 8,388,608-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V65800 is a 8,388,608-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    e2g0140-18-11md51v65800608-word32-pin+1soj32-p-400-1 PDF

    SOJ32-P-400-1

    Contextual Info: FEDD51V65400E-03 OKI Semiconductor MD51V65400E Issue Date: Jul. 19, 2005 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSD51V65400E is a 16,777,216-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MD51V65400E achieves high integration, high-speed operation, and


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    fedd51v65400e-03md51v65400e216-wordmsd51v65400e+232-pinsoj32-p-400-1 PDF

    a20 tssop-8

    Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
    Contextual Info: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM


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    hn58v257ahn58c256ahn58c257ahn58s65a+10hn58v65ahn58v66ahn58v1001hn58c1001hn58s256ahn58v256aa20 tssop-8hn58x24512fpiaghitachi dsa00279csp48 PDF

    SOJ32

    Abstract: 1741R
    Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    j2g0140-18-11md51v65800608-wordmd51v65800cmos8+642cmos32soj32tsop09664ms32400milsojsoj321741r PDF

    425M

    Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
    Contextual Info: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3


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    p-lfbga144-1313-0p-bga256-2727-1p-bga352-3535-1p-bga420-3535-1+12p-bga560-3535-1p-tflga32-0806-0425mdip18dip20dip28dip32dip40soj28-p-400-1pga wire bondingipga400-c-s33u-1pga240 PDF

    Contextual Info: GM71V64403C GM71VS64403CL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM7iV S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS


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    gm71v64403cgm71vs64403cl64403c/clgm71v+232soj/tsopiigm7ivs64403cl PDF

    MD51V65405

    Abstract: SOJ32-P-400-1 l915
    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    md51v65405soj32-p-400-1l915 PDF

    SOJ32-P-400-1

    Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    fedd51v65400e-03md51v65400e216-wordmsd51v65400e+232-pinsoj32-p-400-1 PDF

    64M-DRAM

    Contextual Info: INFORMATION NOTE Second Generation 64M - DRAM Characterisation Data 10.96 INFO64M4.DOC 64M-DRAM This information note is intended to provide technical information on the SIEMENS second generation 64M-DRAM Dynamic Access Memories operating at the 3.3 V VCC


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    info64m464m-dramhyb3164400/800/160aj/at+1405/805/165aj/at PDF

    SOJ32-P-400-1

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    md51v65800soj32-p-400-1 PDF

    SOJ32-P-400-1

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original
    soj32-p-400-1 PDF

    MD51V65405

    Abstract: MD51V65405-50 MD51V65405-60 SOJ32-P-400-1
    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    md51v65405soj32-p-400-1md51v65405-50md51v65405-60 PDF

    K/GM71VS65403CL

    Contextual Info: GM71V65403C GM71VS65403CL 16,777,216 WORDS x 4 BIT ¿ f c LG Sem ïcon wCo., Ltd. w .,f c .iw . CMOS DYNAMIC RAM Pin Configuration Description The GM71V(S 65403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)65403C/CL utilizes advanced CMOS


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    gm71v65403cgm71vs65403clgm71v65403c/cl+1k/gm71vs65403cl PDF

    MD51V64405

    Abstract: MD51V64405-50 MD51V64405-60 SOJ32-P-400-1 a12r
    Contextual Info: E2G0137-18-11 ¡ Semiconductor MD51V64405 ¡ Semiconductor This version:MD51V64405 Mar. 1998 16,777,216-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V64405 is a 16,777,216-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    e2g0137-18-11md51v64405216-word32-pin+4md51v64405-50md51v64405-60soj32-p-400-1a12r PDF

    MD51V65805

    Abstract: MD51V65805-50 MD51V65805-60 SOJ32-P-400-1
    Contextual Info: E2G0142-18-11 ¡ Semiconductor MD51V65805 ¡ Semiconductor This version:MD51V65805 Mar. 1998 8,388,608-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V65805 is a 8,388,608-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    e2g0142-18-11md51v65805608-word32-pin+3md51v65805-50md51v65805-60soj32-p-400-1 PDF

    MD51V64400

    Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1
    Contextual Info: E2G0135-18-11 ¡ Semiconductor MD51V64400 ¡ Semiconductor This version:MD51V64400 Mar. 1998 16,777,216-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V64400 is a 16,777,216-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    e2g0135-18-11md51v64400216-word32-pin+3md51v64400-50md51v64400-60soj32-p-400-1 PDF