514100A Search Results

Contextual Info: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The 514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The 514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

M514100

Abstract: E130155
Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N E R A L D ESC R IP T IO N The M SM 514100A /A L is a n e w g e n e ra tio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b r ic a te th e M SM 5 1 4 1 0 0 A /A L is O K I's CM O S silic o n g a te p ro cess

B56A

Contextual Info: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount­ ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the

514100aj-60

Abstract: HYB514100AJ-80 HYB514100A-80 514100AZ-60 4MX1 aram
Contextual Info: • aaasbos SIEME qqhqmqo r- e i s i e g SIEMENS A KTIEN G ESELLSCHAF • 4Mx 1-Bit Dynamic RAM M7E D T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time

Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The 514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The tech n o lo gy used to fab ricate the M SM 514100A/AL is O KI's CMOS silicon gate process

TGS 203

Contextual Info: blE » • 4 4 cl t j 2 ü 3 D022flflfl Tfi3 H M 5 1 4 1 O O A /A L /A S L S e rie s — 4,194,304-wordx1-bit Dynamic RAM HITACHI/ The H itachi HM 514100A/AL/ASL is a CMOS dynamic RAM organized 4,194,304-word x 1-bit. 514100A/AL/ASL has realized higher density,

514100A

Abstract: Siemens CCa A4 siemens cca Q67100-Q586 T-V6-Z3-15 siemens FLH G2040M
Contextual Info: • aaasbos SIEME qqhqmqo SIEMENS r- e i s i e g AK TI EN GE SE LL SC HA F • 4Mx 1-Bit Dynamic RAM M7E T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE 514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

HM514100A-8

Contextual Info: 514100A S e rie s-514100AL Series Low Power Version 514100ASL Series Super Low Power Version Preliminary 4,194,304-Word x 1-Bit Dynamic Random A c ce ss Memory 514100AJ Series • DESCRIPTION The Hitachi 514100A is a C M O S dynamic RAM organized 4,194,304 word x

m514100

Abstract: HM514100A-8 M514100AL hm514100as ASLS-10 HI257 m514100a 514100A
Contextual Info: 514100A Series 514100AL Series Low Power Version 514100ASL Series Super Low Power Version Preliminary 4,194,304-Word x 1-Bit Dynamic Random A c ce s s Memory 514100AJ Series • DESCRIPTION The Hitachi 514100A is a C M O S dynamic RAM organized 4,194,304 word x

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

Contextual Info: uraer mis aata sneei by MCM514101 A/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information 4Mx1 CMOS Dynamic RAM Nibble Mode The MCM514101A is a 0.7^ CMOS high-speed, dynamic random access memory. It is organized as 4,194,304 one-bit words and fabricated with CMOS

514100A

Contextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated

Contextual Info: SIEM ENS 4M x 9-Bit Dynamic RAM Module HYM 94500S/-60/-70/-80 HYM 94500L/-60/-70/-80 Advanced Inform ation • • 4 194 304 words by 9-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle tim e (-70 version)

L100

Abstract: M100 9X01 OKI
Contextual Info: 6. 捺 印 6. 捺 印 6-1. 標準捺印について - 2 6-2. 特殊捺印について - 7 6 1 6. 捺 印 捺印には弊社指定の” 標準捺印” とお客様指定の”特殊捺印”

Contextual Info: O K I Semiconductor 514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The 514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the 514100A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: 4,194,304 W O R D x 1 BIT D Y N A M IC R A M * T h is is a d v a n c e d in fo rm a tio n a n d s p e c ific a ­ tio n s a re s u b je c t to c h a n g e w ith o u t notice. D ESC R IPTIO N T he T C 5 1 4 1 0 0 A P /A J/A S J/A Z is th e n e w g e n e r a tio n d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w ords by 1

a512K

Abstract: TC514100AJ TC514100AP TC514100ASJ ZIP20-P-400A n915
Contextual Info: 4,194,304 WORD x PRELIMINARY 1 BIT D YN AM IC RAM DESCRIPTION T h e T C 5 1 4 1 0 0 A P /A J /A S J /A Z is th e n e w g e n e r a tio n d y n a m ic R A M o rg a n iz e d 4 , 194,304 w o rd s b y 1 b it. T h e T C 5 1 4 1 0 0 A P /A J /A S J /A Z u tiliz e s T O S H IB A ’S C M O S S ilic o n g a te p ro c ess te c h n o lo g y a s w e ll as

ASJ-10

Abstract: ATR10 ATR80
Contextual Info: - 230C M O S X Ä m £ tt £ CO -f- >• D y y ft tt TRAC max ns TRCY min (ns) TCAD min (ns) TAH min (ns) TP min ¡ns) n C 3 m R A M ( 4 1 9 4 TDH mir (ns) TRWC nin (ns) V D D or V C C (V) 4 X 1 ) Â m M HCÏ min (ns) 3 I DD max (mA) CL O CM 4 M I DD STANDBY

Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION T H E 514100A is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514410ASJ/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

Contextual Info: SIEMENS 4 M X 8-Bit Dynamic RAM Module HYM 84500S/-60/-70/-80 HYM 84500L/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 8-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

MSM6388

Abstract: J380 1h 514100A M6588 MSM6588 MSM6691 MSM6691GS-2K m514100a 529A1
Contextual Info: ¡ Semiconductor MSM6691 ¡ Semiconductor MSM6691 DRAM Interface IC GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R/W Read/Write ICs, the MSM6388, and the MSM6588. The MSM6691 translates the signals

darm

Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

Contextual Info: SIEMENS HYM 84500S/-60/-70/-80 HYM 84500L/-60/-70/-80 4 M X 8-Bit Dynamic RAM Module Advanced Information • 4 194 304 words by 8-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)