B56A Search Results

Nippon capacitors

Contextual Info: B56AW472E-5/6/7 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-747A Z Rev. 1.0 Feb. 28, 1997 Description The H B56A W 472E belongs to 8 B yte DIMM (Dual In-line M em ory M odule) family, and has been developed as an optim ized m ain m em ory solution for 4 and 8 Byte processor applications. The

hb56a51240

Abstract: HM514256 HB56A51240BR7A
Contextual Info: blE P • 44^b203 002355b blB ■HITE! B56A51240BR Series 524,288-W ord x 40-Bit High Density Dynamic RAM Module HITACHI/ LOGIC/ARRAYS/MEM The H B56A51240BR is a 512k x 40 dynamic RAM m odule, m ounted 20 p ieces o f I-M bit DRAM HM514256AJP sealed in SOJ package.

514400C

Contextual Info: B56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The H B56A 140BR is a 1M X 40 dynam ic RAM m odule, m ounted 10 pieces of 4-M bit DRAM HM514400CS/CLS sealed in SOJ package. An outline of the B56A140BR is 72-pin single in-line

HB56A19B

Contextual Info: B56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having

Contextual Info: B56A132 Series 1,048,576-word x 32-Bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1,1995 Description The H B56A132 is a 1 M x 32 dynamic RAM m odule, mounted 8 pieces o f 4-M bit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the B56A132 is 72-pin single in-line package.

Contextual Info: blE D • 4 4 ^ 5 0 3 DG2371b ÔT3 ■ H I T ? H B 56A 168 S e r ie s HITACHI/ l ogi c / arrays / heii 16,777,216-Word x 8-Bit High Density Dynamic RAM Module The H B56A 168 is a 16 M x8 dynam ic RAM m odule, m ounted 8 pieces o f 16-Mbit DRAM HM5116100J sealed in SOJ package. An outline

D069

Abstract: PD-8100
Contextual Info: ^ 1 'i "T ’S G-» B56A164EJ Series 1,048,576-W ord x 64-Bit High Density Dynamic RAM Module HITACHI The H B56A 164E J belongs to 8 B yte D IM M Dual In-line M em ory M odule fam ily, and has been developed as an optim ized main m em ory solution for 4 and 8 B yte processor applications.

HB56A18B-8A

Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Contextual Info: B56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The B56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single

HM5117400J

Contextual Info: NEW PRODUCT B56A432B Series 4,194,304-Word X 32-Bit High Density Dynamic RAM Module - PRODUCT P R E V IE W - Rev.O Dec. 24.1991 ^H IT A C H I D escription T he H B56A432B is a 4M X 32 dynam ic RAM m odule, m ounted 8 pieces of 16Mbit DRAM H M S117400J sealed in SOJ package. An outline of th e B56A432B is 72-pin single in-line

B56A

Contextual Info: B56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount­ ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the

Nippon capacitors

Contextual Info: B56AW472E-5/6/7 32 MB Buffered FP DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HITACHI ADE-203-747B (Z) Rev. 2.0 Nov. 1997 Description The H B56A W 472E belongs to 8 B yte DIMM (Dual In-line M em ory M odule) family, and has been

B56A

Contextual Info: B56A272E Series Preliminary 2,097,152-Word x 72-Bit High Density Dynamic RAM Module HITACHI The H B56A 272E belongs to 8 Byte DIMM Dual In-line Mem ory M odule fam ily, and has been developed as an optim ized m ain m emory solution for 4 and 8 Byte processor applications.

Contextual Info: B56A132 Series 1,048,576-word x 32-Bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The H B56A132 is a 1 M x 32 dynamic RAM m odule, mounted 8 pieces o f 4-M bit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline o f the B56A132 is 72-pin single in-line package.

Cx2829

Abstract: ,national semiconductor Linear brief lb-3
Contextual Info: CX28250 ATM Physical Interface PHY Devices The CX28250 is an ATM-SONET Physical Layer (PHY) device with an integrated, PLL clock and data recovery (CDR) circuit. This device has optimized SONET framer functions for mapping ATM cells to SONET payloads for edge switch applications, and

51W16400

Abstract: Nippon capacitors
Contextual Info: B56AW872EJK Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-719A Z Rev. 1.0 Feb. 20, 1997 Description The B56AW 872EJK belongs to 8 Byte DIMM (Dual In-line M emory M odule) family, and has been developed as an optim ized main memory solution for 4 and 8 Byte processor applications. The

B56A

Abstract: HB56AW232D-7b
Contextual Info: B56AW232D Series Preliminary 2,097,152-W ord x 32-Bit High Density Dynamic RAM Module H ITA CH I T he H B 56A W 232D is a 2M x 32 dynam ic RA M Sm all O utline Dual In-line M em ory M odule S O .D IM M , m ounted 4pieces o f 16-M bit DRA M (H M 51W 17800B TT)sealed in T S O P package .

Contextual Info: B56A48A/AT/B-8/10/12 8-Bit DRAM 4,194,304-Word x 8-Bit High Density Dynamic RAM Module PIN OUT • DESCRIPTION The B56A48 is a 4M x 8 dynamic RAM module, mounted eight 4Mbit DRAM HM514100JP sealed in SOJ package. An outline of the B56A48 is 30-pin single in-line package having Lead types

Contextual Info: B56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module • 72-pin single in-line package - L ead p itch : 1.27 mm • Single 5 V ± 5% supply • H igh speed - A ccess tim e : 60 ns/70 ns/80 ns (m ax) • L ow pow er dissipation - O perating : 5.775 W /5.250 W /4.725 W (m ax)

Contextual Info: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types

Contextual Info: B56A172E Series 1,048,576-word X 72-bit ECC High Density Dynamic RAM Module Description The B56A172E belongs to 8 Byte DIMM (Dual In-line M em ory M odule) fam ily, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL B56A132SBV-B/BL B56A132BV/BU-C/CL B56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

TI624

Abstract: TI6244
Contextual Info: B56A264EJ Series Preliminary 2 ,0 9 7 ,1 5 2 -W o rd x 64-B it H igh D ensity D ynam ic RAM M odule HITACHI . ne H B 5 6 A 2 6 4 E I b e lo n g s to 8 B y te D IM M D u a l In -lin e M e m o ry M o d u le fa m ily , a n d h a s b e en d e v elo p ed a s a n o p tim iz e d m a in m e m o ry s o lu tio n

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0