HB56A19A-12
Abstract: HB56A19A7L
Contextual Info: HB56A19L Series 1,048,576-W ord x 9-B it High Density Dynam ic RAM M odule • PIN O U T ■ D ESCRIPTIO N The HB56A19 is a 1M x 9 dynamic RAM module, mount ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack age. An outline of the HB56A19 is 30-pin single in-line pack
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hb56a19lhb56a19hm511000aljp30-pin+6hb56a19ahb56a19athb56a19bhb56a19gbhb56a19a-12hb56a19a7l
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HB56A19B
Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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hb56a19576-word511000jp30-pin+9hb56a19ahb56a19athb56a19bhb56a19b8ahb56a19b10ahb56a19b-7h511000ahb56a19at10ahb56a19b-8a
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HB56A19B
Contextual Info: HB56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having
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Contextual Info: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types
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hb56a19a/at/b-6h/7h/8a/10a/12a576-wordhb56a19hm511000jp+430-pinhb56a19ahb56a19athb56a19b
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HM511000
Contextual Info: HB56A19L S eries-1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A19 is a 1M x 9 dynamic RAM module, mount ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack age. An outline of the HB56A19 is 30-pin single in-line pack
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hb56a19l576-wordhb56a19hm511000aljp+630-pinhb56a19ahb56a19athb56a19bhb56a19gbhm511000
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HB56A19B
Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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hb56a19576-wordhm511000jp30-pin+9hb56a19ahb56a19athb56a19bhb56a19b8azp 1401hb56a19b10asimm 30-pinhb56a19a-12hb56a19a-12a
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rca thyristor manual
Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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rca thyristor manualhn623258101490 |
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS2219 N onvolatile D R AM Stik 1 M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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ds221930-position10-volt1024k+230-pins2219
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416c25614800a14900a514170b+16514280bkm23c16000gkm23c16100gkm23c16000fpkm23c16100fphn624017fbk93c4693cs46nmb832001hn6230841c100093c46ln41464hn623257hm63832dt71256
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nec 424256
Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Contextual Info: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000
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m5m4c1000msm511000mb81c1000km41c1000+13mt4c1024s4c1024m5m44c256mb81c4256km44c256mt4c4256nec 424256nec 424100511000424256424256 necnec 421000514256
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101490
Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ade-40101490p22nhm50464p-12+150464 ram
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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a16685-7emtr1147sun hold ras 0610oki logic+3motorola transistor 7144msc2304m5m41000
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30 pin SIP dram memory
Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS2219 Nonvolatile DRAM Stik 1M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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30-position10-volt1024kds2219+230-pin30 pin sip dram memory
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