511000A Search Results

Contextual Info: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to

HM511000AJP7

Abstract: HM511000 HM511000AJP-7 dynamic ram 8 bit hm511000 HM511000AJP8 DP-18C HM511000AZP-8 HM511000A Hitachi Scans-001 HM511000AP-7
Contextual Info: H M 5 1 1 0 0 0 A S e rie s H M 5 1 1 0 0 0 A L ~ S e rie s 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A /A L P Series • DESCRIPTION The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­

hyb511000a

Abstract: HYB511000 511000a HYB511000AL
Contextual Info: B aeiSbGS GGS037b 5 Ó S I E G SIEMENS AKTIENGESELLSCHAF 47E D * T - Lf £ ' Z 3 * fS HYB 511000AL-60/-70 1M x 1-Bit Dynamic RAM Low Power Version Advance Information • 1 048 576 x 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time (HYB 511000AL-60)

514400J

Abstract: 511000a
Contextual Info: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An

511000a

Abstract: mode 811
Contextual Info: M OT OR OL A M SC - CnEf l OR Y / A S I bSE D • L3t,75Sl M O TO R O LA Q0ÖT173 flbfl ■ riOT3 511000A Advance Information Commercial Plus and Mil/Aero Applications 1M x 1 CMOS Dynamic RAM Page Mode ELECTRICALLY TESTED PER: 511000A AVAILABLE AS The 511000A is a 1.On C M OS high-speed, dynam ic random access memory.

tc511000

Abstract: 511000a
Contextual Info: AZL-TOj TCÔ11000APL/AJUAZL-60 TC511000/UhUAJL/AZL-10 n T EN T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M IC R A M D ESC RIPTIO N T h e TC 511000A PL/A JL/A Z L is th e new g e n e ra tio n d y n am ic RAM o rg an ized 1,048,576 w ords by 1 b it. T he T C 511000A PL /A JL /A Z L u tilizes TOSH IBA'S CM OS Silicon g ate process technology as w ell as

M511000A

Abstract: M511000 511000A HM511000AJP-7 HM511000AP-12 511000 cmos M5110 HM511000AJP7 M51100 511000AJ
Contextual Info: 511000A Series ~ 511000AL Series 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A/ALP Series • DESCRIPTION The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­

0829A

Contextual Info: '• 't*: : ! I !•] ! i I I : i ! I i ! 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U LE DESCRIPTION The THM91070AS/AL and TTIM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514400A SJ and 1 pcs of T C 511000A J/B J on the printed circuit board.

Contextual Info: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.

HM511000AJP7

Abstract: m511000a m511000 511000a
Contextual Info: 511000A Series ~ 511000AL Seríes 1048576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511000A /A LP Series The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­

MCM511000AP80

Abstract: 511000a 511000A-70 MCM511000AZ80 MCM511000AP70 MCM511000AJ80
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511000A MCM51L1000A 1M x 1 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The M CM 511000A is a 1 .On CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated w ith C M O S silicon-gate

Contextual Info: • SIEM ENS Ô235b05 QaEDESb b HSIË fî SIEMENS A KT IE NGESELLSCHAF 1 M X 36-Bit Dynamic RAM Module 47E D HYM 361Q20S-8Q/-10 Advanced Information • • • • • • • • • • 1 04 576 x 36-bit organization alternative 2 097 153 x 18-bit Fast access and cycle time

HB56A19B

Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

Contextual Info: 511000ALP/ALJP/ALZP-8/10/12 •Preliminary 1,048,576-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION The Hitachi 511000ALP/ALJP/ALZP family is a CMOS dy­ namic RAM organized 1,048,576 word x 1-bit. 511000ALP/ ALJP/ALZP has realized higher density, higher performance and

511000

Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
Contextual Info: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

HB56A18B-8A

Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Contextual Info: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single

Contextual Info: T E N TA T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M DE SC R IP TIO N The T C 5 1 1 0 0 0 A P L /A JL /A Z L is the new gen eration dynam ic RAM organized 1 ,0 4 8 ,5 7 6 words by 1 b it. The T C 5 1 1 0 0 0 A P L /A JL /A Z L utilizes T O SH IB A ’S CMOS Silicon gate process technology as well as

mcm511000ap10

Abstract: M511000 M511000A mcm511000a MCM511000AZ10 Z13i MCM511000AZ80 M-511 511000a CM511000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511000A MCM51L1000A Advance Information 1 M x 1 C M O S Dynam ic RAM The 511000A is a 1.0/* CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS silicon-gate process

511000A

Abstract: TC511000AP TC511000AZ TC511000Aj TC511000A
Contextual Info: TC5110OOAP/AJ/AZ-70. 511000AP/AJ/AZ-80 TC5110OOAP/AJ/AZ-10 TENTATIVE DATA 1,048,576 W O R D IT D Y N A M I C x RAM DESCRIPTION T h e T C 5 1 1 0 0 0 A P / A J / A Z is t h e n e w g e n e r a c i ó n d y n a m i c R A M o r g a n i z e d 1 , 0 4 8 , 5 7 6 w o r d s b y 1 bi t .

MSM511000A-8A

Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Contextual Info: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor 511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The 511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech­

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

HYB511000AJ

Abstract: 511000a
Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module HYM 361020S-80/-10 Advanced Information • 1 04 576 x 36-bit organization alternative 2 097 153 x 18-bit • Fast access and cycle time 80 ns access time 160 ns cycle time (HYM 361020S-80) • • • • • •

HYB511000AJ

Abstract: 511000a 511000AJ
Contextual Info: SIEMENS 2 M X 36-Bit Dynamic RAM Module HYM 362020S-80/-10 Advanced Information • 2097152 x 36-bit organization alternative 4194304 • Fast access and cycle time 80 ns access time 160 ns cycle time (HYM 362020S-80 • • • • • • • • x 18-bit)