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    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: ré f. 1M x16-bit , 5V, FP, 1/4K r é f. 1 M x16-bit , 3.3V, FP. 1/4K ré f. 1M x16-bit , 5V, EDO, 1/4K , HY51V18160C / HY51V16160C ' HY5118164C / HY5116164C. HY51V18164C / HY51V16164C 1M x16-bit , 3.3V, EDO, 1/4K re f.' 1M x16-bit , 5V, FP. 1/4K r e f . . 1M x16-bit , 3.3V, FP, 1/4K ref. - · 1 Mx 16-bit, 5V, EDO, 1/4K r e t." " 1M x16-bit , 3.3V, EDO, 1/4K ref. 283 291 299 307 315 64M-bit DRAM H Y


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    PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616

    1128K

    Abstract: 64K X 4 SRAM
    Text: . 185 HY6316100A. 64K x16-bit . 5V, 15/17/20/25ns. 197 HY63V16100A. 64K x16-bit . 3.3V, 20/25/30 , .257 HY6716100.64K x16-bit . 5V, 6/9/12, Pipeline, Syncronous SRAM. 269 HY67V16100. 64K x16-bit . 3.3V, 7/12/17, Pipeline, Syncoronous SRAM. 281 HY6716110.64K x16-bit . 5V, 15/20/25, Non-Pipeline, Syncronous SRAM


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    PDF 64K-bits HY6264A. HY6264A-1. 256K-bits 120ns. HY2316000. 16-bit. HY2316050. 1128K 64K X 4 SRAM

    Not Available

    Abstract: No abstract text available
    Text: , 2K Ref., EDO - 231 1M x16Bit , 5V, 4KRef., FPM - 240 1M x 16 Bit, 5V, 1KRef, FPM - 251 1M x16Bit , 5V, 4KRef., EDO - 262 1M x16Bit , 5V, 1KRef., EDO -274 1M x16Bit , 3.3V, 4KRef., FPM - 286 1M x16Bit , 3.3V, 1M x16Bit , 3.3V, 1M x16Bit , 3.3V, 1M x16Bit , 3.3V, 1KRef, FPM - 297 4KRef


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    PDF GM71C4100C GM71C4100E GM71C4400C GM71C4403C GM71C4400E GM71C4403E GM71C4800C GM71C4260C GM71C4263C 512Kx8Bit,

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: . 1025 HY5216256. 256K x 16-bit. 2CAS, EDO, HY5216257. 256K x16-bit.2WE , .667 H Y 5118160. 1M x16-bit . FP, 1K r e f . 2CAS, S R , .699 H Y51V 16160B. 1M x16-bit . 3.3V, FP, 4K ref., 2CAS, S R , . 763 H Y51V 16164B. 1M x16-bit . 3.3V, EDO, 4 K ref., 2CAS, S R .779 HY5118164B. 1M x16-bit.EDO , 1 K r e f , 2CAS, S R


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    PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    MAPCA2000

    Abstract: X32B DSA00152780 hitachi PLC equator VLIW architecture ac3 decoder toslink PAL to ITU-R BT.601/656 Decoder TV Tuner phillips 21 IEC958 free home theater circuit diagram for assemble
    Text: No file text available


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    PDF MAP-CA2000TM MAP-CA2000 MAP-CA2000 128-bit MAPCA2000 X32B DSA00152780 hitachi PLC equator VLIW architecture ac3 decoder toslink PAL to ITU-R BT.601/656 Decoder TV Tuner phillips 21 IEC958 free home theater circuit diagram for assemble

    2005 - DDR2 x32

    Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
    Text: x16/x32bit SDRAM, DDR SDRAM and x16-bit DDR2 SDRAM. Printers Digital Video Cameras Improved , processing can be optimized by using x16-bit or x32-bit I/O SDRAM, or DDR SDRAM. We also provide "Bare Chip , appliances. Comparison with two 256Mb DDR2 ( x16-bit configuration) solution IDD4 IDD7 25% Lower


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    PDF x32-bit 256Mb x16-bit 229mA 258mA 172mA 256Mb 512Mb E0652E90 DDR2 x32 ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2

    1997 - AVR 8515 microcontroller

    Abstract: PIC16C54 rom based project PIC16C5X PIC16fXX assembly language Programming AT90ICE1200 CCS addressable pwm avr c language application note PIC12C508 PIC16F84 Free Projects of LED Advanced Transdata development board
    Text: x16-bit word architecture and they are only comparing their 20-pin version. A better comparison would be , actuality it is 512 x16-bit words AT90S2313 = 2K bytes In actuality PIC16C54 = 768 bytes or 512 x12-bit , actuality it is 1K x16-bit words You have to program the entire 16 bit word for each program instruction , . PIC17CXXX PIC17CXXX's are available from 4K ­ 32K bytes or 2K ­ 16K x16-bit words All devices are OTP and there are some ROM versions In actuality it is 2K x16-bit words AT90S8515 = 8K bytes In actuality


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    PDF AT90S1200 DS00170A AVR 8515 microcontroller PIC16C54 rom based project PIC16C5X PIC16fXX assembly language Programming AT90ICE1200 CCS addressable pwm avr c language application note PIC12C508 PIC16F84 Free Projects of LED Advanced Transdata development board

    MN1020019

    Abstract: MN1020219 QFH064-P-1414B
    Text: □ MN1020019 / 0219 / 0419 / 0819 ■Type MN1020019 / 0219 / 0419 / 0819 1 ROM (x8-bit/ x16-bit ) External /16K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/ x16-bit ) 3K /1K / 2K / 3K (External Memory Expandable) 1 Minimum Instruction Execution Time IV1N102D019 / 0219/ 0419/ 0819 :100ns (at 4.5 to 5.5V, 20MHz) IV1N1020019/0219/0419 : 200ns (at 2.7 to 3.3V, 10MHz) 1 Interrupts •RESET «Watchdog • Timer Counter 0 to 3 • External 0 to 3 *NMI * Serial ch 0,1 Transmission • Serial ch 0


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    PDF MN1020019 x8-bit/x16-bit) IV1N102D019 100ns 20MHz) IV1N1020019/0219/0419 200ns 10MHz) MN1020219 QFH064-P-1414B

    Not Available

    Abstract: No abstract text available
    Text: . 19 2. KM28N800-T/B . 4.5V~5,5V/1Mx8bit, 512K x16bit.46 3. KM28U160-T/B . 2.7V~3.6V/2Mx8bit, 1M x16bit.48 III.NAND FLASH


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    PDF KM28U800-T/B 512Kx16bit. KM28N800-T/B x16bit. KM28U160-T/B KM29U128T/IT V/512Kx8bit V/512Kx8bit.

    2004 - DDR2 x32

    Abstract: ELPIDA DDR2 Datasheet Unbuffered DDR2 SDRAM DIMM DDR2 layout 84 FBGA outline DDR2 SDRAM "DDR2 SDRAM" 84 FBGA DDR2 DDR2 x16
    Text: required two x16-bit I/O DRAMs. Now, Elpida offers a 512Mb DDR2 SDRAM with x32-bit I/O configuration as a one-chip solution. The advantages of this x32-bit solution over a two 256-megabit DDR2 (with x16-bit


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    PDF 200/266/333/400/533MHz 400/533/667/800/1066Mbps x4/x8/x16/x32 100/133/166/200/250MHz 200/266/333/400/500Mbps E0474ED0 512Mb DDR2 x32 ELPIDA DDR2 Datasheet Unbuffered DDR2 SDRAM DIMM DDR2 layout 84 FBGA outline DDR2 SDRAM "DDR2 SDRAM" 84 FBGA DDR2 DDR2 x16

    2003 - Rambus XDR

    Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
    Text: , through 3.2Gbps, 4.0Gbps, 4.8Gbps ultra-high-speed data transfer operation and x16-bit I/O configuration , applications. Features of XDR DRAM Highest pin bandwidth DRAM Bandwidth 10.0 GB/s ( x16-bit base


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    PDF 512Mb x16-bit GDDR3-1600 DDR3-1333 64MB/system DDR2-667 DDR2-1066 Rambus XDR DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400

    MN102L35G

    Abstract: QMN102L35G PX-ICE102L00
    Text: QMN102L35G 1 Type MN102L35G 1 ROM ( x16-Bit ) 144 K 1 RAM ( x16-Bit ) 5 K 1 Minimum Instruction Execution Time 167 ns (at 4.75 V to 5.25 V, 12 MHz) 1 Interrupts External (4 lines) Internal (23 lines) ■Timer x 8, A/Dx 1, Undefined command x1, RESET x1, OSDx2, Serial x 2, l2C x 1, Caption x 2, Remote Control x 1, Address coincidence x 4 1 Timer Counter 8-Bit timer x 2 16-Bit timer x 2 Watchdog timer: 17-Bit x 1 1 Serial Interface l2C x 1 For multimaster mode, Bus line


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    PDF QMN102L35G MN102L35G x16-Bit) 16-Bit 17-Bit SDIP064-P-0750 PX-ICE102L00 PX-PRB102L35 MM102LP35G MN102L35G QMN102L35G PX-ICE102L00

    OSC 20Mhz

    Abstract: MN102L230 QFP160-P-2828B tv remote control system osc20mhz 521K
    Text: □ MN102L230 1 Type MN102L23Q I ROM (x8-bit / x16-bit ) Maximum 16M in external total (Control register, Inbuilt RAM, Character multiplex l/F space, VRAM, DRAM. Reserve Space included) ■RAM ( x16-bit ) 2K I Minimum Instruction Execution Time 100ns (at 4.5 to 5.5V, 20MHz) 1 Interrupts External 4 Internal 6 : Timer x 2, A/D x 1, TV peripheral block x 1, Watchdog x 1, NMI x 1 TV peripheral block internal interrupt : OSD x 4, Serial x 2, l2C x 1, MUSE x 4, Remote Control x 5 1 Timer Counter


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    PDF MN102L230 MN102L23Q x16-bit) 100ns 20MHz) 16-bit 1000-diviston 17-bit 20Qfi, OSC 20Mhz MN102L230 QFP160-P-2828B tv remote control system osc20mhz 521K

    Not Available

    Abstract: No abstract text available
    Text: J MN1020019 / 0219 / 0419 / 0819 MN1020019 / 0219 / 0419 / 0819 1 Type 1 ROM (x8-bit/ x16-bit ) External / 1 6K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/ x16-bit ) 3K / 1 K / 2K / 3K (External Memory Expandable) I Minimum Instruction Execution Time MN1020019 / 0219 / 0419 / 0819 : 100ns (at 4.5 to 5.5V, 20MHz) MN1020019 / 0219 / 0419 1 Interrupts •RESET : 200ns (at 2.7 to 3,3V, 10MHz) »Watchdog «Timer Counter 0 to 3 • External 0 to 3


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    PDF MN1020019 x8-bit/x16-bit) 100ns 20MHz) 200ns 10MHz)

    8X16

    Abstract: 048576-WORD 16MCDRAM
    Text: Preliminary Spec. (Rev.0.6) msm^TStp 16MCDRAM : 16k (lk-WORD X16-BIT ) SRAM Cache, TAG, IWI^IVIt V I U I UWM I r Comparator, built-in Controller 16M(1M-W0RD X 16-BIT)DRAM PRELIMINARY This document is a preliminary specification and some of the contents are subject to change without notice. DESCRIPTION • This 16M-bit Cache DRAM integrates a 1,048576-word by 16-bit dynamic memory array, a 1024 , (REVO,6)Oct.1994 Preliminary Spec. (Rev.0.6) msm^TStp 16MCDRAM : 16k (lk-WORD X16-BIT ) SRAM Cache, TAG


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    PDF 16MCDRAM X16-BIT) 16-BIT 16M-bit 048576-word 1024-word 8X16 16MCDRAM

    2005 - TC58NVG2D4BFT00

    Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
    Text: -50 TC59LM913AMG-55 TC59LM913AMG-60 I/O x8bit SSTL_18, HSTL x16bit x8bit SSTL_2 x16bit


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    PDF 03-3457-3405FAX. TC58NVG2D4BFT00/TH58NVG3D4BFT00 TC58DVG14B1FT00 TC58NVG2D4BFT00 TH58NVG3D4BFT00 600s/ TC58NVG2D4BFT00 TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D SSTL18 th58nvg TMP86FS49UG

    X16-BIT

    Abstract: 64K SRAM
    Text: HY62UF16101C S eries 64K x16bit full CMOS SRAM DESCRIPTION The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high , is written or read to the Upper byte, I/O 9 -I/O 16. 194 HY62UF16101C S eries 64K x16bit full , LOADS V t M=2.8V Note 1. Including jig and scope capacitance HY62UF16101C S eries 64K x16bit , HY62UF16101C S eries 64K x16bit full CMOS SRAM MARKING INSTRUCTION Package Marking Example H Y


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    PDF HY62UF16101C x16bit 16bit. HYUF611CC 100ns X16-BIT 64K SRAM

    2003 - playstation 3

    Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
    Text: a single device, through 3.2GHz (4.0GHz) ultra-high-speed data transfer operation and x16-bit I/O , XDR DRAM DRAM Bandwidth x16-bit base DDR333 0.6GB/s DDR400 0.8GB/s DDR2-667 1.3GB


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    PDF 512Mb E0428E60 playstation 3 playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA

    pin details of VIPER 22

    Abstract: SDRAM DIMM 1997 SDRAM 1997 82C576 VIPer 32 opti chipset 82C579
    Text: see the following fanout: · Minimum four input loads in a system with DIMMs using x16bit devices · , following fanout: · Minimum one input load in a system with a single DIMM using x16bit devices · Maximum , following fanout: · Minimum four input load in a system with a single DIMM using x16bit devices · Maximum , x16bit devices · Maximum 64 input loads in a system with four single-bank (or two double-bank) DIMMs , single DIMM using x16bit devices · Maximum 64 input loads in a system with four single-bank (or two


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    PDF 82C579 82C579. 100ns 200ns pin details of VIPER 22 SDRAM DIMM 1997 SDRAM 1997 82C576 VIPer 32 opti chipset

    qfp128p

    Abstract: No abstract text available
    Text: IVI N 1 020012A / 0012AFA / 0012-3V 1 Type | R O M (x8-bit/ x16-bit ) R A M (x8-bit/ x16-bit ) External ROM, RAM MN1020012A / 0012AFA : 100ns (at 4.5 to 5.5V, 20MHz) MN1020012-3V : 200ns (at 3.0 to 3.6V, 10MHz) M N 1 020012A / 0 0 1 2 A F A / 0012-3V Maximum 16M In total (Special Register 1K, Reserve Space 3K included) | Minimum Instruction Execution Time | Interrupts · RESET «Watchdog «Tim er Counter 0 to 9 «Tim er Counter 10 to 12 ·T im e r Counter 10 to 12 Compare Capture A «Tim er


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    PDF 20012A 0012AFA 012-3V x8-bit/x16-bit) MN1020012A 0012AFA 100ns 20MHz) MN1020012-3V qfp128p

    mk22fn

    Abstract: KE06
    Text: ) Random Number Generator Timers Analog Up to 2 x16bit ADC Communication Interfaces 3xI2C , Generator Analog Up to 2 x16bit ADC 3 x ACMP Up to 2 x 12-bit DAC Cryptographic Acceleration , Communication Interfaces Up to 2 x16bit ADC Cryptographic Acceleration Unit (CAU) Carrier Modulator , Analog 2 x16-bit ADC Timers Communication Interfaces FlexTimer 2xI2C 1xI2S 2 x ACMP , Program Flash Up to 512K Low-Leakage Wake-Up Unit Security and Integrity Analog •2 x16-bit


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    PDF

    2005 - sdram pin voltage

    Abstract: DRAM elpida elpida SDRAM
    Text: popularization of broadband. To meet market demand, we provide low power and lower density x16-bit 64Mb/128Mb , demands driving the digital video camera market. Video processing can be optimized by using x16-bit or


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    PDF 210mA 140mA 256Mb 512Mb E0652E40 sdram pin voltage DRAM elpida elpida SDRAM

    L25D

    Abstract: L2503 L25A LP25A MN102L2503 MN102LP25G MN102L25A LP25D LP25Z
    Text: □ MN102LP25G / L25G / LP25Z / LF25Z / L25Z / LP25D / L25D / LP25A / L25A / L2503 ■Type MN102LP25G / L25G / LP25Z / LF25Z / L25Z / LP25D / L25D / LP25A / L25A / L2503 (For MN102LP25G and L25G, ES samples are available. LF25Z, LP25A and L25A are under development.) ■ROM (x8-bit/ x16-bit ) 128K (OTP) / 128K / 128K (OTP) / 128K (Flash) / 128K / 64K (OTP) / 64K / 32K (OTP) / 32K / External I RAM (x8-bit/ x16-bit ) 5K/5K/3K/3K/3K/3K/3K/2K/2K/3K I Minimum Instruction Execution Time ■Interrupts All models


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    PDF MN102LP25G LP25Z LF25Z LP25D LP25A L2503 L25D L2503 L25A MN102L2503 MN102L25A

    pa5ad

    Abstract: IR07 AD03 AD04 MN102L360C MN102L36K OK-32K
    Text: □ MN102L36K / L360C 1 Type MN102L36K [ES (Engineering Sample) available] / L360C 1 ROM (x8-Bit/ x16-Bit ) 256 K/ External 1 RAM (x8-Bit/ x16-Bit ) 10 K/5 K 1 Minimum Instruction Execution Time 100 ns (at 4.5 V to 5.5 V, 20 MHz) 200 ns (at 2.7 V to 3.6 V, 10 MHz) 1 Interrupts • RESET • Watchdog • Timer Counter 0 to 5 • Fixed-Length Serial ch 0,1 Transmission • Fixed-Length Serial Ch 0,1 Reception • Timer Counter 6 to 7 • Timer Counter 6 to 7 Compare Capture A • Timer


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    PDF MN102L36K L360C MN102L36K x8-Bit/x16-Bit) LQFP128-P-1818C MN102L360C MN102L36xx 128pin pa5ad IR07 AD03 AD04 MN102L360C OK-32K

    Not Available

    Abstract: No abstract text available
    Text: MN102L35G |Typ e | MN102L35G (under development) 144K 5K ROM ( x16-bit ) | RAM ( x16-bit ) | Minimum Instruction Execution Time | Interrupts External (4 lines) 1 6 7 n s (at 4 .7 5 to 5 .2 5 V , 12M H z) Internal (23 lines) Timer x 8, A/D x 1, Undefined command x 1, RESET x 1, OSD x 2, Serial x 2, l2C x 1, Caption x 2, Remote Control x 1, Address coincidence x 4 | Timer Counter 8 -b it tim er x 2 1 6 -b it tim er x 2 W atchd og tim er: 1 7 -b it x 1 | Serial Interface | Caption


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    PDF MN102L35G x16-bit) SDIP064-P-0750
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