H11D1S Search Results

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

25E 106

Abstract: H11D1M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

soc1044

Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Contextual Info: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

H11D1

Abstract: E113898 H11D1M H11D1S H11D1S-TA1
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Current transfer ratio CTR : MIN. 20% at IF = 10mA, VCE = 10V * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V)

H11D1M

Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
Contextual Info: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

Contextual Info: 6 LEADED DEVICES continued Resistor Darlington Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1) Current Transfer Ratio (CTR) Device H11G1S,F H11G2S,F H11G3S.F % Min e* If @ mA 1000 1000 200 10 10 1 VCE(sat) VOF Volts Volts

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

E113898

Abstract: H11D1-V H11D1 H11D1M H11D1S H11D1S-TA1 6-pin 1M
Contextual Info: High Collector-emitter Voltage Type Photocoupler H11D1 Series Features Package Dimensions Current transfer ratio CTR : MIN. 20% at IF = 10mA, VCE = 10V High isolation voltage between input and output ( VISO = 5,000 Vrms ) High collector-emitter breakdown voltage

stk 453 030 A power amplifier ic

Abstract: ic audio power amp stk 2028 transistor b740 HCPL 1458 8 pin opto ptc 14749 Atlas PWM 3021 LTS 543 pin common cathode display ic stk 432 050 CXA-0271 cross reference marking code x328 SMD ic
Contextual Info: OptoElectronics Displays 3M Touch Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Conflux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Digital View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

78l03

Abstract: S M R750 quartz fl 9014 smd 2SC 8550 3SK35 AT93C56SC 2SK2335 SMD CODE PACKAGE SOT25 st smd diode marking code VU THU 1203
Contextual Info: CHIP SOLID TANTALUM CAPACITOR a. f r a * * 016 iW íD M fé R - 1 A,S m jz m m KE M E T/S PR A G E/N EC ta rn s * CA45 + HH*4SHt S S JIM V D C m % * ìi R5Bf L i W H 0.2 0.2 0.1 0.1 w. /v 6V : ov 16V POV ?f V 35V X4 ZZ'b 010 016 020 025 03b C J A C :• e

H11D1M

Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

H11DX

Abstract: H11D1 H11D2
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

h11cx

Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Contextual Info: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.