H11D1 Search Results

H11DX

Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

smd s101

Abstract: s101 6-pin RM1M VC200
Contextual Info: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown

H11D1

Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
Contextual Info: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5

25E 106

Abstract: H11D1M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

H11D3

Abstract: RBE1
Contextual Info: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V

H11D1-X007

Abstract: H11D1 H11D2 H11D3 H11D4
Contextual Info: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation

MOTOROLA 813 transistor

Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
Contextual Info: QT Optoelectronics MOTOROLA Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolator H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output 300 Volts [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes

H11D2

Abstract: H11D1-X007
Contextual Info: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current

Contextual Info: 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ HARRI S SEMICOND SECTOR 01E 4302271 37E Photon Coupled Isolator H11D1-H11D4 0G271ÖÖ A B C D E F G H J K V N P R S . rV i& absolute maximum ratings: 25°C W INFRARED EMITTING DIODE

siemens d 2101

Abstract: RB1M
Contextual Info: H11D1/H11D2/H11D3 SIEMENS PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR at lp*10 mA, BVCER=10 V: ¿20% * Good CTR Llnsarlty with Forward Currant * Low CTR Degradation • Very High Collector-Em ltter Breakdown

transistor SMD 11d

Abstract: 11D transistor Diode smd 11D J
Contextual Info: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl

VDE0303

Contextual Info: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS

C3883

Abstract: GE H11D2 verin VDE0833 H11D1 GE
Contextual Info: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r

11d2

Contextual Info: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in

Contextual Info: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C

H11D3

Abstract: DSA0011162
Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage

H11DI

Contextual Info: Optoisolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor INCHES ftiiLU M E T E R : MIN MAX MIN MAX CCATINjr. T h e H I I D I -H 1 1 D 4 a r e gallium arse n id e , in fra re d em ittin g

C1775

Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
Contextual Info: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

H11D1

Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
Contextual Info: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0

11d2

Abstract: C1770 h11dx C1775 transistor C1775
Contextual Info: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled

h11dx

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

phototransistor 3 pin

Abstract: 3 pin phototransistor MOC8204 phototransistor datasheet 4N38 H11D1 H11D2 H11D3 H11D4
Contextual Info: Optoelectronics Products High Voltage Phototransistor Output; DC Sensing Input CTR @10 mA IF % BVCEO(V) BVCBO(V) BVECO(V) tON/tOFF(µs) Min Max Min Min Min Max VISOACRMS (kV) 1 minute 4N38 20 — 80 80 7 — 5.3 H11D1 20 — 300* 300 7 — 5.3 H11D2 20 —

Contextual Info: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage