11D2 Search Results

Magnecraft

Abstract: C3-r20 POTTER ara120aba RR2KP-U-DC24 KUL11D15D-12 785XBXC-12D 755XBXCD-24D KUL11D15S-12 R50-11A10-120
Contextual Info: Section 7 Cr os s Re fe r e nc e Gu i d e Magnecraft Midtex Potter & Brumfield 711XBXC-12D 711XBXC-24D 711XBXC-48D 711XBXC-110D 619-11B200 619-11C200 619-11D200 619-11F200 KUR-11D15-12 KUR-11D15-24 KUR-11D15-48 KUR-11D15-110 Magnecraft ATC Diversified Time Mark

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter

"5SDD 11D2800"

Abstract: IGCT IGCT abb 5sdd11d2800
Contextual Info: VRSM = 3000 V IFAVM = 1070 A IFRMS = 1680 A IFSM = VF0 = 0.80 V rF = 0.300 mΩ Ω 14 kA Rectifier Diode 5SDD 11D2800 Target specification Doc. No. 5SYA1166-00 Sep. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number

11-2510

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ Ω 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)

5sdd11d2800

Contextual Info: 5SDD 11D2800 5SDD 11D2800 Old part no. DV 827-1100-28 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 800 I FAVm = 1 285 I FSM = 15 000 V TO = 0.933

Contextual Info: VRSM IFAVM IFRMS IFSM VF0 rF = = = = = = 3000 1285 2019 16x103 0.933 0.242 Rectifier Diode V A A A V mΩ Ω 5SDD 11D2800 Doc. No. 5SYA1166-00 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter

Contextual Info: TOSHIBA TC74VCX16373FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16373FT LOW-VOLTAGE 16-BIT D-TYPE LATCH WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16373FT is a high performance CMOS 16-bit D-TYPE LATCH. Designed for use in 1.8, 2.5 or 3.3 Volt

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden

Contextual Info: TOSHIBA TC74VCX162374FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162374FT LOW-VOLTAGE 16-BIT D-TYPE FLIP-FLOP WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162374FT is a high performance CMOS 16-bit D-TYPE FLIP FLOP. Designed for use in 1.8, 2.5 or 3.3 Volt

ty 612

Abstract: PJ 3139
Contextual Info: PMC-Sierra, Inc. ADVANCE PM5313 SPECTRA-622 DATA SHEET PMC-981162 ISSUE 2 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PROPRIETARY AND CONFIDENTIAL ADVANCE ISSUE 2: MAY 1999

SI 1150H

Abstract: xnxx 1155H 16 x E1 G.703 MP 9720 ds yt 1208 diode 1N311
Contextual Info: PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PRELIMINARY ISSUE 3: OCTOBER 1999 Proprietary and Confidential to PMC-Sierra Inc., and for its Customers’ Internal Use REVISION HISTORY Issue No. Issue Date Details of Change

1N07

Abstract: relay cross reference z570 1062H
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5313 SPECTRA-622 DATA SHEET PMC-1981162 ISSUE 4 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PRELIMINARY ISSUE 4: FEBRUARY 2000 Proprietary and Confidential to PMC-Sierra Inc., and for its Customers’ Internal Use

Contextual Info: TOSHIBA TC74VCX162373FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162373FT LOW-VOLTAGE 16-BIT D-TYPE LATCH WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162373FT is a high performance CMOS 16-bit D-TYPE LATCH. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: IBM11D1365E 11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation

Contextual Info: IBM11 D1475B IBM11 E1475B 11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: : -6R : rac RAS Access Tim e ; 60ns : tc A C CAS Access Tim e : 18ns : I U a I rc t|HPC • High Performance CMOS process

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Chips and Technologies F840

Abstract: b1115 d6160
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Electroswitch series 24

Abstract: electroswitch 2438D Electroswitch electroswitch 24 Electroswitch series 20 2442D Electroswitch 105 2438D 03057-1-C3 Electroswitch series 40
Contextual Info: Switches and Relays For the Power Industry E L E C T R O S W I T C H NeveR a Doubt U T I L I T Y P R O D U C T S Printed in USA 5M 113 ELECTROSWITCH Corporation 180 King Avenue Weymouth, MA 02188 TEL: 781 335-5200 FAX: (781) 335-4253 www.electroswitch.com

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

14D360

Abstract: CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO C B g n l u a s i t

mx Z015

Abstract: 0x09D6 nd-152 ND151 auxiliary contact SK11 DANUBE ski mx 1AC5 GEN51 able mx 1608 RX
Contextual Info: S4805CBI11 DANUBE Datasheet Revision 1.10 February 4, 2003 AMCC Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products. To ensure your complete satisfaction with our products and technologies, we have prepared this