H11DX Search Results

H11DX

Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

25E 106

Abstract: H11D1M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

C1775

Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
Contextual Info: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

11d2

Abstract: C1770 h11dx C1775 transistor C1775
Contextual Info: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II H11D1 H11D2 H11D3 PACKAGE DIMENSIONS rib rib rib d e s c r ip t io n The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled

h11dx

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

H11D1M

Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
Contextual Info: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

H11DX

Abstract: 4N38 H11D1 H11D2 H11D3 H11D4 DSA00106336
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

H11DX

Abstract: H11D4.300 H11D12 4N38
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: [•H I HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 DESCRIPTION PACKAGE DIMENSIONS dò cib & o tp $ Qp 7.62 MAX ~ 0.41 _ i t The H11DX is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from

4N38

Abstract: H11D1 H11D2 H11D3 H11D4 H11DX
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

H11D1M

Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

MOC8204M

Abstract: all datasheet phototransistor 4N38M OPTOCOUPLERs MARKING CODE H11D1 H11D1M H11D2M H11D3M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

c1775

Abstract: C1770 H11D1 H11D2 H11D3 H11DX
Contextual Info: HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPT0ELECTHO8ICS H11D1 H11D2 H11D3 DESCRIPTION PACKAGE DIMENSIONS 6.33 REF T h e H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

H11DX

Abstract: 740L6010 H11Ax 740L6001 Optocouplers QTC 740L6000 H11GX H11A1Z QTC 740L6000 mct6 optocoupler
Contextual Info: mm QUALITY UL PACKAGE CODES • l TECHNOLOGIES UL APPROVED OPTOCOUPLERS UL LISTING - YELLOW CARD A UL yellow card may either specify the optocoupler manufacturer’s own device part number or a package code. Optocouplers are listed as a package code consisting of a single

soc1044

Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Contextual Info: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

opt 300

Abstract: h11dx Optocouplers QTC qtc optocoupler h11ax Qtc mct6 qtc cny17-1 OPT300 MCT22XX fpqu2
Contextual Info: æO UL PACKAGE CODES 0PTOELECTmmCS UL APPROVED OPTOCOUPLERS UL LISTIN O •YELLOW CARD G EN ERAL A UL yellow card may either specify the optocoupler manufacturer's own device part number or a package code. Optocouplers are listed as a package code consisting of a single

Contextual Info: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62

V4N36

Abstract: ic MCT2e
Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 PHOTOTRANSISTORS High Voltage, High CTR, High Sensitivity Jedec Types Phototransistor General Purpose High Collector-Emitter Voltage

C1775

Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
Contextual Info: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF

h11cx

Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Contextual Info: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.