4N40 Search Results

Contextual Info: Freescale Semiconductor Mask Set Errata 4N40C Rev 29 MAY 2013 Mask Set Errata for Mask 4N40C Introduction This report applies to mask 4N40C for these products: • S08PT60 Errata ID Errata Title 5264 DBG: Comparator C with TAG type can not generate breakpoint when setting breakpoint at the address

4N40

Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N40 Preliminary Power MOSFET 4A, 400V N-CHANNEL POWER MOSFET 1 TO-220  DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N40 Power MOSFET 4A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

4N40

Abstract: solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

4N39T

Abstract: d4n40
Contextual Info: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri

IN5060 diode

Abstract: 45010 4N40 in5060 4N39 AN40 SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and AN40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

740L6000

Abstract: H11L1QT 740L6010 H11L1QT-ND H11L2QT-ND QT OPTOELECTRONICS CLA114CT-ND OPTOCOUPLER 8-PIN isocom cla103-nd HCPL2631QT-ND
Contextual Info: Optoisolators SCR & Triac Output Optoisolators A Isolation Voltage Max. IF Trigger Min. Blocking Voltage Iout mA A 660 14mA 400V 300 4N40IS-ND B B B 5300 5300 5300 30mA 15mA 10mA 250V 250V 250V 100 100 100 MOC3009QT-ND MOC3010QT-ND MOC3011QT-ND B B B B B

4N39-4N40

Abstract: scr 200v 3a 4N39 4N40 E91231
Contextual Info: 4N39X, 4N40X 4N39, 4N40 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62

Photo SCR

Abstract: in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

Contextual Info: Schematics and Specifications 6-Pin Package Photo SCR Output; DC Threshold Sensing Input ANODE 1 6 GATE CATHODE 2 5 ANODE NC 3 IFT* mA max VTM (V) max VDRM (V) min IDM (µA) max IH (mA) max VISO ACRMS (kV) 1 minute 4N39 14 1.3 200 50 1.0 5.3 4N40 14 1.3

MDM-200

Abstract: VDE110b MOTOROLA SCR driver 4N39 MOTOROLA 4n40
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin DIP Optoisolators S C R Output These devices consist of a gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

BT1603

Abstract: si2112 ae rw solid state relay 220V st1602 T100R T100R-C 4N4U
Contextual Info: [* q PHOTO SCR OPTOCOUPLERS m u in m m 4N40 ib fi The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. • ■ • ■ ■ 0.41 DIMENSIONS IN mm

4n4001

Abstract: 4N4U 4N40 4N39 GE SCR 1000
Contextual Info: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

4N40

Abstract: Photo SCR 4N39 2n9622 H11C4 H11C5 H11C6 H11C1 H11C2 H11C3
Contextual Info: Optoelectronics Products Photo SCR Output; DC Threshold Sensing Input IFT* mA VTM(V) VDRM(V) IDM(µA) IH(mA) Max Max Min Max Max VISOACRMS (kV) 1 minute 4N39 14 1.3 200 50 1.0 5.3 4N40 14 1.3 400 150 1.0 5.3 H11C1 11 1.3 200 50 — 5.3 H11C2 11 1.3 200 50

4N40

Abstract: DIODE HALF BRIDGE TO-220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N40 Preliminary Power MOSFET 4 Amps, 400 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

sci46d

Contextual Info: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

Contextual Info: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR M IN M AX. 2 ao 1 a m p ere 6 volts 0fc.5 012 9 53 3 43 6 86 2 92 6 10 m illiw a tts m illiam p s 090 2 16 305 ; .203 2 54 INFRARED EM ITTING DIODE M AX.

SM 686 16V

Abstract: kc3021 KC3010 KC301 KC3009 400v 15A triac KC3023 100Z KC3012 H11AA1
Contextual Info: 6798580 OPTEK TECHNOLOGY D U A L - IN - LIN E 86D INC PACKAGE 00043 T - w -m ISO LA T O R S T -4 /- # 7 Below listed optoisolators are available in surface mount design, except part numbers KC3009 through KC3023. ~ Specify suffix SMA low profile or 24B (standard profile).

trw resistor

Abstract: 4N45 4N46 4N48
Contextual Info: OPTEK TECHNOLOGY Optoelectronics Division TRW Electronic Components Group INC DfciE D | bT ^f l S ÔD □□□0S7t, 0 | 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5248 January 1985 Low Input Current, High Gain Optically Coupled Isolators

Contextual Info: iso con COflPONENTS LTD 1 7SC D • 4 flflbSI0 0 0 0 0 1 5 3 375 ■ ISO T -V /- *7 4N39, 4 N 4 0 OPTICALLY COUPLED SCR ISOLATORS ISOCOM, INC. 2 74 E. HAM ILTON AVE. SUITE F CAM PBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted FEATURES

b13s7

Contextual Info: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V

tfk fph 141

Abstract: ci tb1229dn TB1229DN tfk fph 131 tfk td 119 tv ecg 21 tss 82 FFD 443
Contextual Info: TB1229DN TOSHIBA TENTATIVE TOSHIBA Bi-CMOS INTEGRATED CIRCUIT T• R MT 1■ 7 7 SILICON MONOLITHIC QInr ■M I tT' N ■ V VIDEO, CHROM A AND SYNCHRONIZING SIGNALS PROCESSING IC FOR P A L/N TSC SYSTEM COLOR TV TB1229DN that is a signal processing IC for the PAL/