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    GE TO220 TRANSISTORS Search Results

    GE TO220 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    GE TO220 TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUX79

    Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
    Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		2SD1017 2N6211 MJ3026 2SC1031 D44T3 D44T4 MJ3585 MJ4240 BUX79 SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801 PDF

    MJE1100

    Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
    Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70


    Original     		MJ4200 MJ4000 MJD6039 MJD6039-1 2SD1520 2SD1414 2SD1933 MJE1100 MJ4001 SDN201 BD263B Motorola transistors MJE1102 PDF

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


    Original     		2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 PDF

    BUY46

    Abstract: 2SB657 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189
    Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE0 on PD Max toN Max (A) (s) ICBO Max hFE fT ON) Min (Hz) r (CE)ut Toper Max (Ohms) Max (°C) 555m 555m 300n 140 140 140 140 140 300n 01u 140 J 140 J TO-220AB TO-220AB TO-220


    Original     		2N5295 2N5296 BDY83 2SB566K 2SB657 2SB858 2SD1133 2SD476K 2SC3473 BUY46 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    diode 2U 66

    Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)


    Original     		2N3741 2N3741A BDT30B SSP58B SSP60B TIP30B 2N4920 2N4923 2SB954A diode 2U 66 STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U STH506 2N3741 MOTOROLA 2sc2317 PDF

    KT819B

    Abstract: KT818A BD347 MJE1660 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type "c Max fT t0N Max hFE 'CBO r V BR CEO Max Max (A) Of) ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)eat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		MJE1290 MJE1660 SDT9801 KT818A KT819A 2SB757-09 KT819B BD347 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757 PDF

    BD561

    Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223


    Original     		MRF222 MRF223 MRF238 2N6083 SD1272 BD162 2SD810 PT9795 BD561 BD585 PT9788A 8D434 BDX24 BD186 motorola MJE2480 BD163 BD272 PDF

    2SD556 sanken

    Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15


    Original     		BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7 PDF

    SGS-Ates

    Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
    Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .


    Original     		SDM3203 SDM3201 SDM3204 SGS125 TIP125 TIP625 MJE1090 SGS-Ates sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125 PDF

    2SD1039

    Abstract: to-53 BUW64A
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A PDF

    BU409D

    Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .


    Original     		BU407H BU409D BU409 BU407 BUY87 2SC3591 2SC3175 2SC3176 BUY18S rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104 PDF

    2SD568L

    Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754


    Original     		2SA1185 2SB827 2SD1063 2SB754 2SD844 ET1551 2SB1224 2SD1626 2SA1442 2SC3692 2SD568L idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K PDF

    B0677A

    Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
    Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301


    Original     		2S01164Z SON301 U2T301 SON401 U2T401 2S01764 B0677A B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000 PDF

    2SB903

    Abstract: 2SD1212 ge to220 transistors
    Contextual Info: Inchange Semiconductor Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed


    Original     		2SB903 O-220 2SD1212 O-220) 2SB903 2SD1212 ge to220 transistors PDF

    2SC1827

    Abstract: 2SC1827 45Y 2SA769 4 PIN TO 220 IC
    Contextual Info: Inchange Semiconductor Product Specification 2SC1827 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA769 ・Collector current :IC=4A ・Collector dissipation :PC=30W@TC=25℃ APPLICATIONS ・For use in low frequency power


    Original     		2SC1827 O-220 2SA769 O-220) 2SC1827 2SC1827 45Y 2SA769 4 PIN TO 220 IC PDF

    2SC1505

    Contextual Info: Inchange Semiconductor Product Specification 2SC1505 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz Min APPLICATIONS ・For use in line-operated color TV chroma output circuits and sound output circuits.


    Original     		2SC1505 O-220 40MHz O-220) 2SC1505 PDF

    2SC1507

    Contextual Info: Inchange Semiconductor Product Specification 2SC1507 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector-emitter voltage : VCEO=300V ・High frequency:fT=40MHz Min APPLICATIONS ・For color TV chroma output applications PINNING


    Original     		2SC1507 O-220 40MHz O-220) 2SC1507 PDF

    2SB1369

    Contextual Info: Inchange Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High collector power dissipation ・High current capability APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1


    Original     		2SB1369 O-220 O-220) 2SB1369 PDF

    2SD234 equivalent

    Abstract: 2SD234 2SB434
    Contextual Info: Inchange Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD234 APPLICATIONS ・For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter


    Original     		2SB434 O-220 2SD234 O-220) 2SD234 equivalent 2SD234 2SB434 PDF

    BD607

    Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)


    Original     		BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07 PDF

    6414a

    Abstract: FGP7N60RUFD FGP7N60RUFDTU
    Contextual Info: FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features Applications • High speed switching Motor controls and general purpose inverters. • Low saturation voltage : VCE sat = 1.95 V @ IC = 7A Description • High input impedance Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides


    Original     		FGP7N60RUFD O-220 FGP7N60RUFD 6414a FGP7N60RUFDTU PDF

    SGP20N60RUF

    Contextual Info: SGP20N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,


    Original     		SGP20N60RUF O-220 SGP20N60RUF SGP20N60RUFTU O-220 PDF