FS 103 TEMPERATUR Search Results

EN61048

Abstract: EN-61048 EN61049 MKM 250-6 CVR200 25018 UL-810 55uF EN-61049
Contextual Info: MFA 250Vac series MKM 250Vac series 250Vac 50 Hz 60 Hz upon request ±5% Capacitance Tolerance / Kapazitätstoleranz Tolérance sur la capacité / Tolerancia sobre la capacidad Working Temperature / Temperaturbereich Température d’utilisation / Temperatura de trabajo

8930

Abstract: D2012
Contextual Info: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

110N12N

Abstract: JESD22 mj 4310 IPD110N12N3G
Contextual Info: IPD110N12N3 G IPS110N12N3 G OptiMOS 3Power-Transistor TM Features Product Summary • N-channel, normal level V DS 120 V R DS on ,max 11 mΩ ID 75 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: IPD400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated

400N06N

Abstract: D27D27 DIODE D27
Contextual Info: IPD400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated

06CNE8N

Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

200N25N

Abstract: IPB200N25N3 IPP200N25N3 IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 20 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature

030N10N

Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
Contextual Info: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

048N12N

Abstract: 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 IPP048N12N3 G
Contextual Info: IPP048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

048N12N

Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP048N12N3
Contextual Info: IPP048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

marking F59 DIODE

Abstract: 123N10N IEC61249-2-21 JESD22
Contextual Info: IPB123N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.3 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature

05cn10l

Abstract: JESD22 PG-TO220-3
Contextual Info: IPP05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

027N10N

Abstract: IPB027N10N3 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

05CN10L

Abstract: 05cn10 IPP05CN10L G
Contextual Info: IPP05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

2n04h4

Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
Contextual Info: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

114N12N

Abstract: diode D83 IPP114N12N3 G IPP114N12N3 JESD22 PG-TO220-3 dd60
Contextual Info: IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 11.4 mΩ ID • Very low on-resistance R DS(on) 75 A • 175 °C operating temperature

122N10N

Abstract: IPD122N10N3 G JESD22
Contextual Info: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature

SMD MARKING CODE g23

Abstract: 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09
Contextual Info: IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

027N10N

Abstract: IPB027N10N3 IEC61249-2-21 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

16cn10l

Abstract: diode d54 JESD22 PG-TO220-3 IPP16CN10L G d54 marking IPP16CN10L
Contextual Info: IPP16CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 15.7 mΩ ID 54 A • Very low on-resistance R DS(on) • 175 °C operating temperature

2N06L64

Abstract: IPD15N06S2L-64 2N06L PG-TO252-3-11 2N06L-64
Contextual Info: IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 64 mΩ ID 19 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N08L50

Abstract: IPD22N08S2L-50 PG-TO252-3-11 dd37
Contextual Info: IPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max 50 mΩ ID 25 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N0640

Abstract: DSAE0013439 smd diode 513 IPD25N06S2-40 PG-TO252-3-11 PG-TO-252-3-1
Contextual Info: IPD25N06S2-40 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 40 mΩ ID 29 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11