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    122N10N Search Results

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    122N10N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD122N10N3GATMA1

    MOSFET N-CH 100V 59A TO252-3
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    DigiKey () IPD122N10N3GATMA1 Cut Tape 16,971 1
    • 1 $2.19
    • 10 $1.40
    • 100 $0.95
    • 1000 $0.69
    • 10000 $0.69
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    IPD122N10N3GATMA1 Tape & Reel 16,971 2,500
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    • 10000 $0.56
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    IPD122N10N3GATMA1 Digi-Reel 16,971 1
    • 1 $2.19
    • 10 $1.40
    • 100 $0.95
    • 1000 $0.69
    • 10000 $0.69
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    Avnet Americas () IPD122N10N3GATMA1 Ammo Pack 1
    • 1 $2.11
    • 10 $1.19
    • 100 $1.04
    • 1000 $1.04
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    IPD122N10N3GATMA1 Tape & Reel 42 Weeks 2,500
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    Mouser Electronics () IPD122N10N3GATMA1 19,004
    • 1 $1.94
    • 10 $1.33
    • 100 $0.87
    • 1000 $0.68
    • 10000 $0.65
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    IPD122N10N3GATMA1 17,376
    • 1 $2.06
    • 10 $1.25
    • 100 $0.94
    • 1000 $0.69
    • 10000 $0.63
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    Newark () IPD122N10N3GATMA1 Tape & Reel 37,689 100
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    • 100 $1.11
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    IPD122N10N3GATMA1 Cut Tape 37,689 1
    • 1 $2.24
    • 10 $1.27
    • 100 $1.11
    • 1000 $1.11
    • 10000 $1.11
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    IPD122N10N3GATMA1 Tape & Reel 2,500
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    • 10000 $0.64
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    Bristol Electronics IPD122N10N3GATMA1 99
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    Rochester Electronics IPD122N10N3GATMA1 1,638 1
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    • 100 $0.74
    • 1000 $0.61
    • 10000 $0.55
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    TME IPD122N10N3GATMA1 2,184 1
    • 1 $1.76
    • 10 $1.09
    • 100 $0.81
    • 1000 $0.64
    • 10000 $0.59
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    EBV Elektronik IPD122N10N3GATMA1 43 Weeks 2,500
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    Infineon Technologies AG IPD122N10N3GBTMA1

    MOSFET N-CH 100V 59A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD122N10N3GBTMA1 Tape & Reel
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    Rochester Electronics IPD122N10N3GBTMA1 100 1
    • 1 -
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    • 100 $0.47
    • 1000 $0.39
    • 10000 $0.35
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    Infineon Technologies AG IPD122N10N3 G

    Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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    Bristol Electronics IPD122N10N3 G 712
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    122N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    122N10N

    Contextual Info: 122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N PDF

    122N10N

    Abstract: IPD122N10N3 G JESD22
    Contextual Info: 122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22 PDF