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    D2012 Search Results

    D2012 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G874D201202CEU
    		Amphenol Communications Solutions Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY PDF

    D2012 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    D 20 12
    		Gedore Torque SOCKET 1/4"" 12 MM Original PDF 6.54MB
    D2012
    		Unknown Si NPN TRANSISTOR Original PDF 14.58KB 1
    D 20 1/2AF
    		Gedore Torque SOCKET 1/4"" 1/2"" Original PDF 6.54MB
    D2012UK
    		Semelab Metal Gate RF Silicon FET Original PDF 53.86KB 4
    D2012UK
    		Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original PDF 60.31KB 4
    D2012UK
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 76.63KB 1
    SF Impression Pixel

    D2012 Price and Stock

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    Kingbright APTD2012F3C

    INFRARED EMITTING DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () APTD2012F3C Cut Tape 10,433 1
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    • 1000 $0.19
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    APTD2012F3C Digi-Reel 10,433 1
    • 1 $0.50
    • 10 $0.35
    • 100 $0.25
    • 1000 $0.19
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    APTD2012F3C Tape & Reel 6,000 3,000
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    • 10000 $0.16
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    Mouser Electronics APTD2012F3C 14,682
    • 1 $0.50
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    Walsin Technology Corporation WLBD2012HCU600TH

    FERRITE BEAD 60 OHM 0805 1LN
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    DigiKey WLBD2012HCU600TH Digi-Reel 3,900 1
    • 1 $0.10
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    Wolfspeed C4D20120A

    DIODE SIL CARB 1200V 54.5A TO220
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    DigiKey C4D20120A Tube 3,265 1
    • 1 $25.65
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    • 100 $14.56
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    Mouser Electronics C4D20120A 633
    • 1 $21.58
    • 10 $14.62
    • 100 $12.88
    • 1000 $11.82
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    TME C4D20120A 7 1
    • 1 $18.82
    • 10 $18.82
    • 100 $11.72
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    Richardson RFPD C4D20120A 1,000
    • 1 -
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    • 100 $8.33
    • 1000 $8.33
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    Win Source Electronics C4D20120A 5,000
    • 1 -
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    • 100 $3.22
    • 1000 $2.89
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    WeEn Semiconductor Co Ltd WNSC2D201200WQ

    DIODE SIL CARB 1200V 20A TO2472
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    DigiKey WNSC2D201200WQ Tube 2,391 1
    • 1 $9.44
    • 10 $6.47
    • 100 $5.25
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    Avnet Americas WNSC2D201200WQ Tube 600
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    Avnet Silica WNSC2D201200WQ 37 Weeks 600
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    EBV Elektronik WNSC2D201200WQ 37 Weeks 600
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    Walsin Technology Corporation WLBD2012HCU601TH

    FERRITE BEAD 600 OHM 0805 1LN
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    DigiKey () WLBD2012HCU601TH Digi-Reel 971 1
    • 1 $0.10
    • 10 $0.02
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    WLBD2012HCU601TH Cut Tape 971 1
    • 1 $0.10
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    D2012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9507 marking

    Abstract: D2012 transistor d2012
    Contextual Info: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		241904B D2012 06A001 NM6002-CS01 D2012 PDF

    D2012

    Abstract: 88621
    Contextual Info: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1


    Original     		202174C D2012 05A001 NM5014-CS02 D2012 88621 PDF

    D2012

    Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
    Contextual Info: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012 PDF

    25160

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		251601B D2012 04A001 NM3032-CS03 25160 D2012 PDF

    10840

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252602B D2012 06A001 NM6019-CS01 10840 D2012 PDF

    NM4002-CS01

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012 PDF

    D2012

    Abstract: 11515DB
    Contextual Info: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB PDF

    D2012

    Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		253004B D2012 06A001 NM6028-CS01 D2012 PDF

    20PF

    Abstract: D2012 252101
    Contextual Info: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252101B D2012 06A001 NM6018-CS01 20PF D2012 252101 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201096B D2012 04A001 NI0033-CS04 D2012 PDF

    09310

    Abstract: 7686 D2012
    Contextual Info: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203608B D2012 04A001 DS4018-CS02 09310 7686 D2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		253010B D2012 09A001 CENTER125. NM9023-CS01 D2012 PDF

    D2012

    Abstract: 61M10
    Contextual Info: SAW Bandpass Filter 203649B G 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40ଇ ~ 85ଇ Electrostatics Sensitive Device ESD Package : D2012 ^U]•WUY 1 4 Base : Fe(SPCC), Au plating over Ni plated


    Original     		203649B D2012 421-809G 04A001 NW4012-CS01 D2012 61M10 PDF

    D2012

    Abstract: 593790
    Contextual Info: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters


    Original     		233004B D2012 08A001 NM8004-CS01 D2012 593790 PDF

    transistor d2012

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		221904B D2012 07A001 NM7037-CS01 D2012 PDF

    D2012

    Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		250506B D2012 06A001 CENTER140. NW6001-CS01 D2012 PDF

    transistor D2012

    Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2012UK 450mW transistor D2012 PDF

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 PDF

    D2012

    Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		D2012 D2012 PDF

    D2012UK

    Contextual Info: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2012UK D2012UK PDF

    D2012

    Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201532B D2012 04A001 201RT NM3009-CS02 D2012 PDF

    8930

    Abstract: D2012
    Contextual Info: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012 PDF