D2012 Search Results
D2012 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| G874D201202CEU | Amphenol Communications Solutions | Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY |
D2012 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| D 20 12 | Gedore Torque | SOCKET 1/4"" 12 MM | Original | 6.54MB | |||
| D2012 | Unknown | Si NPN TRANSISTOR | Original | 14.58KB | 1 | ||
| D 20 1/2AF | Gedore Torque | SOCKET 1/4"" 1/2"" | Original | 6.54MB | |||
| D2012UK | Semelab | Metal Gate RF Silicon FET | Original | 53.86KB | 4 | ||
| D2012UK | Semelab | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED | Original | 60.31KB | 4 | ||
| D2012UK | Unknown | Shortform Datasheet & Cross References Data | Short Form | 76.63KB | 1 |
D2012 Price and Stock
Samtec Inc HLCD-20-12.00-BH-TD-3-T- Bulk (Alt: HLCD-20-12.00-BH-TD-3-T) |
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HLCD-20-12.00-BH-TD-3-T | Bulk | 1 |
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HLCD-20-12.00-BH-TD-3-T | 1 |
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HLCD-20-12.00-BH-TD-3-T |
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Samtec Inc HLCD-20-12.00-BLS-TH-3- Bulk (Alt: HLCD-20-12.00-BLS-TH-3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-20-12.00-BLS-TH-3 | Bulk | 1 |
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HLCD-20-12.00-BLS-TH-3 | 1 |
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HLCD-20-12.00-BLS-TH-3 |
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Samtec Inc HLCD-20-12.00-BRS-TR-3- Bulk (Alt: HLCD-20-12.00-BRS-TR-3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-20-12.00-BRS-TR-3 | Bulk | 1 |
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HLCD-20-12.00-BRS-TR-3 | 1 |
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HLCD-20-12.00-BRS-TR-3 |
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Samtec Inc HLCD-20-12.00-TD-TR-4High Speed Hermaphroditic Cable, 0.50mm Pitch - Bulk (Alt: HLCD-20-12.00-TD-TR-4) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-20-12.00-TD-TR-4 | Bulk | 2 Weeks, 5 Days | 1 |
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HLCD-20-12.00-TD-TR-4 | 1 |
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HLCD-20-12.00-TD-TR-4 |
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Samtec Inc HLCD-20-12.00-TLS-TL-1- Bulk (Alt: HLCD-20-12.00-TLS-TL-1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-20-12.00-TLS-TL-1 | Bulk | 1 |
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HLCD-20-12.00-TLS-TL-1 | 1 |
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HLCD-20-12.00-TLS-TL-1 |
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D2012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
9507 marking
Abstract: D2012 transistor d2012
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Original |
203651bd201204a001nm3017-cs02+2 | |
D2012Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
Original |
241904bd201206a001nm6002-cs01 | |
D2012
Abstract: 88621
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Original |
202174cd201205a001nm5014-cs02+1 | |
D2012
Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
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Original |
242002bd201208a001nm8047-cs01+3 | |
25160
Abstract: D2012
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Original |
251601bd201204a001nm3032-cs03+1 | |
10840
Abstract: D2012
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Original |
252602bd201206a001nm6019-cs01+1 | |
NM4002-CS01
Abstract: D2012
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Original |
270802bd201204a001nm4002-cs01 | |
D2012
Abstract: 11515DB
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Original |
203629bd201204a001203swr+2 | |
D2012Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
253004bd201206a001nm6028-cs01 | |
20PF
Abstract: D2012 252101
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Original |
252101bd201206a001nm6018-cs01+2 | |
D2012Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
201096bd201204a001ni0033-cs04 | |
09310
Abstract: 7686 D2012
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Original |
203608bd201204a001ds4018-cs02+2 | |
D2012Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
Original |
253010bd201209a001center125+1 | |
D2012
Abstract: 61M10
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Original |
203649bd2012421-809g04a001+2 | |
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D2012
Abstract: 593790
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Original |
233004bd201208a001nm8004-cs01+1 | |
transistor d2012
Abstract: D2012
|
Original |
242003bd201206a001nm6015-cs01+1 | |
D2012Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
Original |
221904bd201207a001nm7037-cs01 | |
D2012Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
Original |
250506bd201206a001center140+1 | |
transistor D2012Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
Original |
d2012uk450mwtransistor d2012 | |
transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
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Original |
d2012transistor--d2012transistor d2012d2012 transistor+2 | |
D2012Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage |
Original |
d2012 | |
D2012UKContextual Info: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
Original |
d2012uk | |
D2012Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
201532bd201204a001201rt+1 | |
8930
Abstract: D2012
|
Original |
203624bd201204a001203swr+2 | |