D2012 Search Results
D2012 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| G874D201202CEU |
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Mini power, Vertical, Dual row, 4.2mm pitch, 20 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY |
D2012 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| D 20 12 | Gedore Torque | SOCKET 1/4"" 12 MM | Original | 6.54MB | |||
| D2012 | Unknown | Si NPN TRANSISTOR | Original | 14.58KB | 1 | ||
| D 20 1/2AF | Gedore Torque | SOCKET 1/4"" 1/2"" | Original | 6.54MB | |||
| D2012UK |
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Metal Gate RF Silicon FET | Original | 53.86KB | 4 | ||
| D2012UK |
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED | Original | 60.31KB | 4 | ||
| D2012UK | Unknown | Shortform Datasheet & Cross References Data | Short Form | 76.63KB | 1 | ||
| XL-TD2012SURC | XINGLIGHT | 2.0*1.25*1.4mm, 高亮红色/透明胶体, 环保产品, MSL:4-5级, EIA标准包装, SMT自动化生产, 红外线回流焊制程, 家电电子表, 电子台历, 电子礼品, 数码, 通信, 汽车电子, 照明灯饰, 电子玩具, 交通指示, 城市亮化工程 | Original | ||||
| XL-TD2012UGC | XINGLIGHT | 2.0*1.25*1.4mm, Green/Transparent, 4-5 MSL, RoHS, EIA, SMT, infrared reflow. | Original | ||||
| XL-TD2012UWC | XINGLIGHT | 外观尺寸2.0*1.25*1.4mm，高亮白色/黄色胶体，环保符合ROHS，MSL 4-5级，EIA标准包装，适用于SMT自动生产和红外线回流焊，应用领域包括家电、电子表、电子礼品、数码通信、汽车电子、照明灯饰、电子玩具、交通指示、城市亮化工程。 | Original | ||||
| XL-TD2012UBC | XINGLIGHT | 2.0*1.25*1.4mm, 高亮蓝色/透明胶体, 符合ROHS, MSL 4-5级, EIA标准包装, 适用于SMT自动化生产, 红外线回流焊, 家电电子表, 电子台历, 电子礼品, 数码, 通信, 汽车电子, 照明灯饰, 电子玩具, 交通指示, 城市亮化工程。 | Original | ||||
| XL-TD2012UYC | XINGLIGHT | 2.0*1.25*1.4mm, high brightness Yellow/Transparent, MSL: 4-5, EIA standard, SMT compatible, RoHS compliant. | Original |
D2012 Price and Stock
Kingbright APTD2012LQBC-DLED BLUE CLEAR 2012 SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APTD2012LQBC-D | Digi-Reel | 21,630 | 1 |
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Wolfspeed C4D20120ADIODE SIL CARB 1200V 54.5A TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C4D20120A | Tube | 4,659 | 1 |
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C4D20120A | 68 | 1 |
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C4D20120A | 1 |
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C4D20120A | Bulk | 444 | 0 Weeks, 1 Days | 1 |
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Wolfspeed E4D20120GDIODE SIL CARB 1200V 56A TO2632 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E4D20120G | Tube | 2,253 | 1 |
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E4D20120G | 1 |
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E4D20120G | 1,169 |
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Get Quote | |||||||
onsemi KSD2012GTUTRANS NPN 60V 3A TO-220F-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KSD2012GTU | Tube | 1,998 | 1 |
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KSD2012GTU | 4,097 |
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KSD2012GTU | Bulk | 12,389 | 1 |
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KSD2012GTU | 1 |
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KSD2012GTU | 13 Weeks | 50 |
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KSD2012GTU | 14 Weeks | 50 |
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KSD2012GTU | 790 |
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KSD2012GTU | 4,000 | 50 |
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KSD2012GTU | 2,000 |
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SMC Diode Solutions S4D20120ADIODE SIL CARB 1200V 20A TO220AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S4D20120A | Tube | 637 | 1 |
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D2012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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9507 marking
Abstract: D2012 transistor d2012
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203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012 | |
D2012Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
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241904B D2012 06A001 NM6002-CS01 D2012 | |
D2012
Abstract: 88621
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202174C D2012 05A001 NM5014-CS02 D2012 88621 | |
D2012
Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
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242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012 | |
25160
Abstract: D2012
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251601B D2012 04A001 NM3032-CS03 25160 D2012 | |
10840
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252602B D2012 06A001 NM6019-CS01 10840 D2012 | |
NM4002-CS01
Abstract: D2012
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270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012 | |
D2012
Abstract: 11515DB
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203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB | |
D2012Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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253004B D2012 06A001 NM6028-CS01 D2012 | |
20PF
Abstract: D2012 252101
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252101B D2012 06A001 NM6018-CS01 20PF D2012 252101 | |
D2012Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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201096B D2012 04A001 NI0033-CS04 D2012 | |
09310
Abstract: 7686 D2012
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203608B D2012 04A001 DS4018-CS02 09310 7686 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
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253010B D2012 09A001 CENTER125. NM9023-CS01 D2012 | |
D2012
Abstract: 61M10
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203649B D2012 421-809G 04A001 NW4012-CS01 D2012 61M10 | |
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D2012
Abstract: 593790
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233004B D2012 08A001 NM8004-CS01 D2012 593790 | |
transistor d2012
Abstract: D2012
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242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
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221904B D2012 07A001 NM7037-CS01 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
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250506B D2012 06A001 CENTER140. NW6001-CS01 D2012 | |
transistor D2012Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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D2012UK 450mW transistor D2012 | |
transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
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D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 | |
D2012Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage |
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D2012 D2012 | |
D2012UKContextual Info: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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D2012UK D2012UK | |
D2012Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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201532B D2012 04A001 201RT NM3009-CS02 D2012 | |
8930
Abstract: D2012
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203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012 | |