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    IPB123N10N3 Search Results

    IPB123N10N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB123N10N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 58.0 A; Original PDF 332.38KB 11
    IPB123N10N3GATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 58A TO263-3 Original PDF 650.35KB
    SF Impression Pixel

    IPB123N10N3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB123N10N3GATMA1

    MOSFET N-CH 100V 58A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPB123N10N3GATMA1 Digi-Reel 3,129 1
    • 1 $1.98
    • 10 $1.37
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    IPB123N10N3GATMA1 Cut Tape 3,129 1
    • 1 $1.98
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    IPB123N10N3GATMA1 Reel 2,000 1,000
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    Avnet Americas IPB123N10N3GATMA1 Reel 1,000
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    Mouser Electronics IPB123N10N3GATMA1 2,499
    • 1 $1.94
    • 10 $1.34
    • 100 $0.93
    • 1000 $0.69
    • 10000 $0.61
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    Verical () IPB123N10N3GATMA1 7,000 1,000
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    IPB123N10N3GATMA1 1,360 34
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    IPB123N10N3GATMA1 750 365
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    Newark () IPB123N10N3GATMA1 Cut Tape 1
    • 1 $1.92
    • 10 $1.32
    • 100 $0.93
    • 1000 $0.85
    • 10000 $0.85
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    IPB123N10N3GATMA1 Reel 1,000
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    • 10000 $0.70
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    Rochester Electronics IPB123N10N3GATMA1 750 1
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    • 100 $0.82
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    • 10000 $0.61
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    TME IPB123N10N3GATMA1 1
    • 1 $1.87
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    • 100 $1.87
    • 1000 $1.48
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    Ameya Holding Limited IPB123N10N3GATMA1 800
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    Chip One Stop IPB123N10N3GATMA1 Cut Tape 1,360 0 Weeks, 1 Days 1
    • 1 $1.97
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    EBV Elektronik IPB123N10N3GATMA1 1,000 17 Weeks 1,000
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    New Advantage Corporation IPB123N10N3GATMA1 1,000 1
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    Infineon Technologies AG IPB123N10N3 G

    MOSFETs N-Ch 100V 58A D2PAK-2 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB123N10N3 G 3,691
    • 1 $2.33
    • 10 $1.49
    • 100 $1.03
    • 1000 $0.73
    • 10000 $0.64
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    IPB123N10N3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking F59 DIODE

    Abstract: 123N10N IEC61249-2-21 JESD22
    Contextual Info: IPB123N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.3 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPB123N10N3 IEC61249-2-21 PG-TO263-3 123N10N marking F59 DIODE 123N10N IEC61249-2-21 JESD22 PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original
    IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original
    IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3 PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    Q451

    Abstract: B175D e-b35f
    Contextual Info: # #  ! !   #   ! !   #   ! !   B< "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 H* 9H"[Z# @B? 4E3 D &  , 9H ( J *  , ? >=1H-(    )*&+ Y" ' -0 6


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    726-IPB123N10N3G IPB123N10N3 Q451 B175D e-b35f PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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