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    126N10N Search Results

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    126N10N Price and Stock

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    Infineon Technologies AG IPA126N10NM3SXKSA1

    MOSFET N-CH 100V 39A TO220
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    DigiKey IPA126N10NM3SXKSA1 Tube 171 1
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    Avnet Americas IPA126N10NM3SXKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPA126N10NM3SXKSA1
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    Rochester Electronics IPA126N10NM3SXKSA1 500 1
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    TME IPA126N10NM3SXKSA1 1
    • 1 $2.19
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    EBV Elektronik IPA126N10NM3SXKSA1 17 Weeks 500
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    Infineon Technologies AG IPI126N10N3-G

    MOSFET N-CH 100V 58A TO262-3
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    Infineon Technologies AG IPA126N10N3GXKSA1

    MOSFET N-CH 100V 35A TO220-FP
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    Rochester Electronics IPA126N10N3GXKSA1 961 1
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    Infineon Technologies AG IPP126N10N3GXKSA1

    MOSFET N-CH 100V 58A TO220-3
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    DigiKey IPP126N10N3GXKSA1 Tube 500
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    Newark IPP126N10N3GXKSA1 Bulk 1
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    Bristol Electronics IPP126N10N3GXKSA1 26
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    Rochester Electronics IPP126N10N3GXKSA1 6 1
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    • 100 $0.86
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    TME IPP126N10N3GXKSA1 1 1
    • 1 $1.43
    • 10 $1.13
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    Win Source Electronics IPP126N10N3GXKSA1 16,200
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    Rochester Electronics LLC IPA126N10N3GXKSA1

    TRENCH >=100V
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    DigiKey IPA126N10N3GXKSA1 Bulk 302
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    126N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    126N10N

    Contextual Info: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.6 mW ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA126N10N3 IEC61249-2-21 PG-TO220-FP 126N10N 126N10N PDF

    126N10N

    Abstract: PG-TO220FP 126N1 JESD22
    Contextual Info: 126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.6 mΩ ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA126N10N3 PG-TO220-FP 126N10N 126N10N PG-TO220FP 126N1 JESD22 PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Contextual Info: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Contextual Info: 126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor 126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3 PDF