DD37 Search Results

Contextual Info: bEE D • m 27S2S DD37S15 bTT HNECE N E C ELECTRONICS INC J _ LASER DIODE N D L 5738P , N D L 5 7 3 8 P 1 1 310nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLEMODE FIBER DESCRIPTION NDL5738P and NDL5738P1 are 1 310 nm laser diode coaxial module w ith singlemode fiber. It incorporates InGaAs m onitor

SILICON SMALL-SIGNAL DICE

Abstract: opto transistor 2N2605 SILICON DICE motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} ¡ 6367255 MOTOROLA SC ~34 D E ^ L,3b7S5S DD37TÌ1 ? <DIO D E S /OPTO 34C 379g ! D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) 2C3799 — d ie n o . PNP LINE SOURCE — DSL555 This die provides performance similar to that of the following device types:

DD3752

Contextual Info: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH

BTY91-400R

Contextual Info: N AUER PHILIPS/DISCRETE b^E bb53^31 DD373T2 TfiT « A P X D BTY91 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r power control and power switching applications. The series consists of reverse polarity types anode to stud identified by a Suffix R: BTY91-400R to

TIPL785A

Abstract: TIPL785 T1PL790 TIPL790 TIPL790A GD37117 i8311
Contextual Info: TEXAS INSTR -£OPTO> t5 D e | âTblTSb DD37113 fi |~~ T - 3 3 -2 9 Ö961726 TEXAS I NS TR 62C COPTO 37113 TIPL785, TIPL785A, TIPL790, TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4

L755A

Abstract: tipl7 37041
Contextual Info: TEXA S I N S T R -COPTO} 8961726 bS TEXAS INSTR DE IflTblTEb DD37D35 3 OPTO 62C 3 7 0 3 5 T - S D 3 ' f * TlPL75*ï TIPL7<5RA N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED O CTOBER 19 8 4 • 180 W at 2 5 ° C C ase Temperature • 10 A Continuous Collector Current

din 41332

Abstract: siemens CAPACITOR gpf siemens gpf 100 siemens din 41332 gpf CAPACITOR siemens siemens gpf 470/40 gpf CAPACITOR din41332 gpf siemens
Contextual Info: • Ô235b05 DD377bS E « S I E G 85209 Series General Purpose - 40°C to + 85°C -10 % , +100% or -1 0 % , + 50% Capacitance Tolerance SIEMENS AKTIENGESELLSCHAF ¡p^- j^ e 47E D Aluminum electrolytic capacitor with etched aluminum electrodes, encapsulated in

cd photo diode

Abstract: NDL5510
Contextual Info: bEE » • b4E75E5 DD37bß^ 251 BNECE N E C ELECTRONICS INC PHOTO DIODE / NDL5510 1 OOO to 1 6 0 0 nm OPTICAL FIBER COMMUNICATIONS <¿80//m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510 is an InGaAs Avalanche Photodiode especially designed fo r a detector o f long wavelength optical fib er communica­

CD40158

Contextual Info: 4302271 DD373til 2 • HAS 4ME D HARRIS SEMICOND SECTOR i l ! H A R R IS CD4015B Types CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output High-Voltage Types 20-Volt Rating * Medium speed op eration.

l777

Abstract: TIPL777A
Contextual Info: TEXAS INSTR -COPTO} 8961726 TEXAS ]>Ë|ATblTSb DD3710S ^ IN S TR 62C 3 7 1 0 5 <OPTO> TIPL777, TIPL777A, TIPL777B N-P-N SILICON HIGH VOLTAGE ADVANCED POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 180 W at 2 5 °C Case Temperature 2 0 A Continuous Collector Current

TIPL755A

Abstract: TIPL755 npn 1000V 15A 400VMin
Contextual Info: TEXAS INSTR -COPTO} 8961726 b2 TEXAS INSTR DE J ô cî t i l 7 5 b OPTO DD3703S 62C 3 7 0 3 5 T 3 ' D 5 W S " TIPL7RIÎ TIPL7<5RA N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 • 180 W at 2 5 °C Case Temperature • 10 A Continuous Collector Current

Contextual Info: 52E » • 7T2T237 DD37bl6 226 « S Ò T H T'^-/3-2«f S G S -1 H 0 M S 0 N S 6 S-THOMSON M 27V101 ItLD LOW VOLTAGE CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM A D VA N CE DATA ■ LOW VOLTAGE READ OPERATION - V c c Range: 3V to 5.5V (T a = 0 to 70°C)

DD-37

Contextual Info: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double

MMBTA56

Abstract: MPSW56
Contextual Info: NATL SEMICOND DISCRETE H E D I bSD1130 DD37S71 3 I •o A > cn o> National Semiconductor T ' 2e?-^1 ■o to € CJ1 o> MPSA56 MPSW56 MMBTA56 § a> T U G /10100-S PNP General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherwise noted M in

DG37

Abstract: SV 37015 U/25/20/TN26/15/850/SV 37015 TIPL751A TIPL751 BY206 DG37D1S
Contextual Info: "bH DD37011 0 TEXAS INSTR -COPTO} 8961726 TEXAS INSTR <OPTO> _ ! 62C 37011 TIPL751, TIPL751A N-P-N SILICON POWER TRANSISTORS O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4 • 120 W at 2 5 ° C Case Temperature • 4 A Continuous Collector Current

850 PIN Photodetector

Abstract: photodetector 850 nm NDL2104
Contextual Info: b2E D N E C • b42?SES DD37443 3=12 ■ N E C E PHOTO DIODE ELECTRONICS INC NDL2104 OPTICAL FIBER C O M M U N IC A T IO N S SILICON PIN PHOTO DIODE DESCRIPTION NDL2104, is an epitaxial PIN photodiode detectors w ith excellent quantum efficiency, switching speed, and spectral range.

Contextual Info: DD3755 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)25õ

philips fm demodulator satellite

Abstract: philips PLL FM DEMODULATOR fm pll demodulator detector pll fm demodulator TDA8730 fm demodulator A244 demodulator frequency satellite tuners philips FM tuners
Contextual Info: Philips Semiconductors Preliminary specification T-77-05&#39;-05' PLL FM demodulator for DBS signals_ PHILIPS INTERNATIONAL GENERAL DESCRIPTION The TDA8730 is a sensitive PLL demodulator for the second IF and direct broadcasting satellite DBS

Contextual Info: Preliminary Data Sheet August 1998 microelectronics group Lucent Technologies Bell Labs Innovations TTSI2K32T 2048-Channel, 32-Highway Time-Slot Interchanger Features Applications • Thirty-two full-duplex, serial time-division multi­ plexed TDM highways.

MB90W673

Abstract: DD84 DD62 F2MC-16 MB90670 MB90671 MB90672 MB90673 MB90675 DD44
Contextual Info: FUJITSU SEMICONDUCTOR CM43-10102-2E CONTROLLER MANUAL F2MC-16L 16-BIT MICROCONTROLLER MB90670/675 SERIES USER’S MANUAL 1. The products described in this manual and the specifications thereof may be changed without prior notice. To obtain up-to-date information and/or specifications, contact your Fujitsu sales representative

Contextual Info: GENNUM C O R P O R A T I O G X 434 Monolithic 4x1 Video Multiplexer N DATA SHEET FEATURES CIRCUIT DESCRIPTION • low differential gain: 0.03% typ. at 4.43 MHz The GX434 is a high performance low cost monolithic 4x1 video multiplexer incorporating four bipolar switches with a

Contextual Info: Data Sheet August 1998 Lucent Technologies Bell Labs Innovations LW020 Single-Output-Series Power Modules: 36 Vdc to 75 Vdc Inputs; 20 W Features • Low profile: 9.91 mm 0.390 in. with 0.38 mm (15 mil) standoffs, 9.53 mm (0.375 in.) with standoffs recessed

LD113

Contextual Info: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to

Contextual Info: KC73129UC 1/3 INCH CCD IMAGE SENSOR FOR PAL INTRODUCTION The KC 73129UC is an interline transfer CCD area im age sensor developed fo r PAL 1/3inch optical form at video cam eras, surveillance cam eras, object detectors and im age pattern recognizers. High sensitivity is achieved