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    SOURIAU-SUNBANK S56321205CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics S56321205CN-109
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    SOURIAU-SUNBANK S5634S1305CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    SOURIAU-SUNBANK S56321805CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    SOURIAU-SUNBANK S5634S1505CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    RS S5634S1505CN-109 Bulk 16 Weeks 50
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    SOURIAU-SUNBANK S5634S1705CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    RS S5634S1705CN-109 Bulk 16 Weeks 50
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    05CN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    05CN10L

    Abstract: 05cn10 IPP05CN10L G
    Contextual Info: 05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipp05cn10lpg-to220-305cn10l05cn10+1ipp05cn10l g PDF

    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+4pg-to262-3pg-to220-305cn10njesd22 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+5pg-to262-3pg-to220-305cn10n05cn10jesd22 PDF

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10niec61249-2-21+6pg-to263-3pg-to262-3pg-to220-305cn10njesd22diode d100 to220 PDF

    05cn10l

    Abstract: JESD22 PG-TO220-3
    Contextual Info: 05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipp05cn10lpg-to220-305cn10ljesd22 PDF

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+5pg-to262-3pg-to220-305cn10n05cn10jesd22 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+405cn10npg-to262-305cn10ipb05cn10ng PDF

    05CN10N

    Abstract: 05cn10
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+305cn10npg-to262-305cn10 PDF