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    05CN10N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP05CN10NGXKSA1

    Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IPP05CN10NGXKSA1 1
    • 1 $3.10
    • 10 $2.46
    • 100 $2.22
    • 1000 $2.22
    • 10000 $2.22
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    Rochester Electronics IPP05CN10NGXKSA1 1,460 1
    • 1 -
    • 10 -
    • 100 $1.60
    • 1000 $1.43
    • 10000 $1.34
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    Vyrian IPP05CN10NGXKSA1 11,076
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    Infineon Technologies AG IPP05CN10NG

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IPP05CN10NG 150
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    Vyrian IPP05CN10NG 348
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    Infineon Technologies AG IPP05CN10N-G

    IN STOCK SHIP TODAY
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    Component Electronics, Inc IPP05CN10N-G 7
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.50
    • 10000 $2.50
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    Infineon Technologies AG IPI05CN10NG

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPI05CN10NG 11,864
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    Infineon Technologies AG IPP05CN10NGHKSA1

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP05CN10NGHKSA1 11,287
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    Find more 05CN10N price and stock on Findchips.com

    05CN10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+4pg-to262-3pg-to220-305cn10njesd22 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+5pg-to262-3pg-to220-305cn10n05cn10jesd22 PDF

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10niec61249-2-21+6pg-to263-3pg-to262-3pg-to220-305cn10njesd22diode d100 to220 PDF

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+5pg-to262-3pg-to220-305cn10n05cn10jesd22 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+405cn10npg-to262-305cn10ipb05cn10ng PDF

    05CN10N

    Abstract: 05cn10
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb05cn10nipi05cn10nipp05cn10npg-to263-3+305cn10npg-to262-305cn10 PDF