FOR10SEC Search Results

QEC121

Contextual Info: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18

Contextual Info: FQ B GaAs INFRARED EMITTING DIODE wmm* OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES Good optical to mechanical alignment SYM BO L IN C H E S MIN. A M ILLIM ETER S MAX.

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

diode BY 226

Abstract: QRC1113 diode 226 ST2178
Contextual Info: L5 0 p > n-r,r, » ^ , n , r j REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 DESCRIPTION PACKAGE DIMENSIONS .420 10.67 -» — .328 (8.33) (A ), .062 R NOM (K) .226 (5.74) i c - (E) (C ) f ^ .150 (3.81) .150 (3.81) NOM POINT OF OPTIMUM RESPONSE

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

Contextual Info: EQ PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23B1 PACKAGE DIMENSIONS w ' E t — D— - 1-1 — !— b| SECTION X-X LEAD PROFILE The H23B1 is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon photodarlington. The clear epoxy packaging

schematic diagram UPS ica

Abstract: power mosfet 9505 sim welding diagram schematic diagram 24v UPS ic 4410 8pin inverter lg ig drive schematic diagram UPS ica ce 1200 full bridge igbt induction heating generator ups high power FET Transistor ic driver mosfet 8 pin 4413
Contextual Info: iUIXYS IX B D 4410 1XBD4411 IXBD4412 1XBD4413 ISOSMART HALF BRIDGE DRIVER CHIPSET* Features 1 2 0 0 V o r G r e a t e r L o w -to H ig h -S id e Is o latio n . 20ns D riv e s P o w e r S y s t e m s O p e r a tin g O n U p to 5 7 5 V A C S w itc h in g T im e w ith 1 0 ,0 0 0 p F L o a d .

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSC133 PACKAGE DIMENSION! DESCRIPTION | _ . 126 3.20 .106(2.69) REFERENCE SURFACE. Th e Q S C 133 is a silicon photodarllngton en capsulated in an infrared transparent, black T-1 package. II FEATURES Steel lead fram es for im proved reliability in solder

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS 0PB862N51/0PB862N55 Th e O P B 862N series of switches is designed to allow the SEE NOTE 3' user m axim um flexibility in applications. Each switch II consists of an infrared em itting diode facing an NPN 1 s phototransistor across a .125" 3.18 m m gap. A unique

Contextual Info: [ s î i SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B4/5/6 PACKAGE DIMENSIONS SYMBOL ~ lD2f~ ♦ D E T + MILLIMETERS MIN. T S r* © r -4 -^ 3 —I T í 1- 10.7 11.0 .422 .433 3.0 3.2 .119 .125 A? 3.0 3.2 .119 .125 .024 .030 .600 .750 .50 NOM. ,020 NOM.

H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Contextual Info: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated

QRB1134

Contextual Info: feu REFLECTIVE OBJECT SENSORS d p m iE u m u s QRB1133/1134 M Æ 2M L. 1 ^ ;im .420 10.67 — - .328 (8.33) ‘““f i “I f f 1 PE>oM PTW §r Th e QRB1133/1134 consists of an infrared em itting diode and an N P N silicon phototransistor m ounted side by side

OPB706A

Abstract: OPB706B OPB706C OPB804 st215
Contextual Info: c*o SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB8Q4 PACKAGE DIMENSIONS .500 12.70 PIN 1 -.175 (4.45) _L .250 (6.35) J_ FEATURES rt .070 (1.78) .330 (8.38) ‘ SEE NOTE 4 .350 (8.89) MIN J_ l-SEE NOTE 3 h-.125 (3.18) ±.005 .460 (11.68) .100 (2.54)- J h-SEE NOTE 3

Contextual Info: EU REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — DESCRIPTION The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

Contextual Info: EOI HIGH GAIN SPLITDARLINGTON OPTOCOUPLERS OPTOELECTRONICS i I — • 6N138 6N139 PACKAGE DIMENSIONS DESCRIPTION The 6N138/9 single channel optocouplers contain a 700 nm GaAsP LED emitter which is optically coupled to a high gain detector in a split Darlington configuration, providing extremely

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRDHICS L 14 R 1 DESCRIPTION PACKAGE DIMENSIONS >•—D—• * î t— t—I — — E J .isLs The L14R1 is a silicon photodarlington encapsulated in a clear, wide angle, sidelooker package. i ' Code I I SECTION X-X

Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703W/OPB704W/OPB705W Th e O PB 703W , O P B 704W , and O P B 7D 5W consist of an infrared emitting diode and an NPN silicon a phototransistor m ounted side by side on a converging optical axis in a black plastic housing. The

Contextual Info: CîXJ PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 .126 3.20 .106(2.69) — _L L -EMITTER .042 (1.07) J ±.010 (±.25) t .800 (20.3) MIN I I f -COLLECTOR / .050 (1.27)'J REF I II r .203(5.16) .183(4.65) 0.30 (0.76) NOM The QSC11X is a silicon phototransistor encapsulated in

smd transistor w19

Abstract: SMD Transistor W1d SMD w19 w19 transistor transistor w1d w19 smd w1d transistor w19 smd transistor
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.4mm Height 19-217/W1D-DP1Q2QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow